STMicroelectronics STD5NK52ZD

Name: STD5NK52ZD
Brand: STMicroelectronics
SKU: 2488042-STD5NK52ZD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD5NK52ZD

Manufacturer:: STMicroelectronics

Ventron No:: 2488042-STD5NK52ZD

Description:: MOSFET N-CH 520V 4.4A DPAK

ECAD Model:

Datasheet:: STD5NK52ZD

Specifications

STMicroelectronics STD5NK52ZD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5NK52ZD.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
520V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
4.4A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD5N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
529pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.4A Tc
Gate Charge (Qg) (Max) @ Vgs
16.9nC @ 10V
Rise Time
13.6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
23.1 ns
Continuous Drain Current (ID)
4.4A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
520V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD5NK52ZD Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 529pF @ 25V.This device has a continuous drain current (ID) of [4.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=520V, the drain-source breakdown voltage is 520V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23.1 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).

STD5NK52ZD Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 520V voltage
the turn-off delay time is 23.1 ns

STD5NK52ZD Applications
There are a lot of STMicroelectronics
STD5NK52ZD applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

STD5NK52ZD More Descriptions

N-channel 520V - 1.22Ohm - 4.4A Zener-Protected SuperMESH(TM) POWER MOSFET
Power Field-Effect Transistor, 4.4A I(D), 520V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:520V; Current, Id Cont:4.4A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.75V; Case Style:DPAK; Termination Type:SMD; Avalanche Single Pulse Energy Eas:170mJ; Current Iar:4.4A; Current, Idm Pulse:17.6A; Power, Pd:70W; Resistance, Rds on @ Vgs = 10V:1.5ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.78°C/W; Typ Capacitance Ciss:529pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:520V; Voltage, Vgs Max:30V; Voltage, Vgs th Max:4.5V; Voltage, Vgs th Min:2.5V

Product Comparison

The three parts on the right have similar specifications to STD5NK52ZD.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Lead Free

Configuration

Drain to Source Voltage (Vdss)

Pbfree Code

Resistance

Case Connection

Turn On Delay Time

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Threshold Voltage

Drain Current-Max (Abs) (ID)

Height

Length

Width

REACH SVHC

View Compare
STD5NK52ZD

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

520V

MOSFET (Metal Oxide)

GULL WING

260

not_compliant

4.4A

30

STD5N

3

R-PSSO-G2

Not Qualified

1

70W Tc

Single

ENHANCEMENT MODE

70W

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

529pF @ 25V

4.4A Tc

16.9nC @ 10V

13.6ns

10V

±30V

15 ns

23.1 ns

4.4A

TO-252AA

30V

520V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD52P3LLH6

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

175°C TJ

Cut Tape (CT)

STripFET™ H6

-

Active

1 (Unlimited)

-

EAR99

-

-

Other Transistors

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

-

NOT SPECIFIED

STD52P

-

-

-

-

70W Tc

-

-

-

P-Channel

-

12m Ω @ 26A, 10V

2.5V @ 250μA

3350pF @ 25V

52A Tc

33nC @ 4.5V

-

4.5V 10V

±20V

-

-

52A

-

-

-

ROHS3 Compliant

-

Single

30V

-

-

-

-

-

-

-

-

-

-

-

-

STD5NK52ZD vs STD52P3LLH6
STD55N4F5

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ V

-

Obsolete

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

-

STD55N

3

R-PSSO-G2

-

1

60W Tc

Single

ENHANCEMENT MODE

60W

N-Channel

SWITCHING

8.5m Ω @ 27.5A, 10V

4V @ 250μA

1600pF @ 25V

55A Tc

25nC @ 10V

15ns

10V

±20V

6 ns

25 ns

55A

-

20V

40V

ROHS3 Compliant

Lead Free

-

-

yes

8.5MOhm

DRAIN

15 ns

220A

No

-

-

-

-

-

-

STD5NK52ZD vs STD55N4F5
STD5NK50Z-1

STMicroelectronics

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

260

-

-

30

STD5N

3

-

-

1

70W Tc

Single

ENHANCEMENT MODE

70W

N-Channel

SWITCHING

1.5 Ω @ 2.2A, 10V

4.5V @ 50μA

535pF @ 25V

4.4A Tc

28nC @ 10V

10ns

10V

±30V

15 ns

32 ns

2.2A

-

30V

500V

ROHS3 Compliant

-

-

-

yes

-

-

15 ns

-

No

3.75V

4.4A

6.2mm

6.6mm

2.4mm

No SVHC

STD5NK52ZD vs STD5NK50Z-1