STMicroelectronics STD5N20T4
- Part Number:
- STD5N20T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488070-STD5N20T4
- Description:
- MOSFET N-CH 200V 5A DPAK
- Datasheet:
- STD5N20T4
STMicroelectronics STD5N20T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5N20T4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesMESH OVERLAY™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance800mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD5N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max45W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation45W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs800m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Rise Time30ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage3V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)20A
- Dual Supply Voltage200V
- Nominal Vgs3 V
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD5N20T4 Description
STD5N20T4 is a 200v N-channel Mesh overlay? MOSFET. Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure makes the STD5N20T4 suitable in converters for lighting applications.
STD5N20T4 Features
Typical RDS(on)=0.6Ω
Extremely high dv/dv capability
100% avalanche tested
Add suffix "T4" for rendering in tape & reel
STD5N20T4 Applications
High current, high-speed switching
Switch mode power supplies
DC-DC converters for telecom
Industrial
Lighting equipment
STD5N20T4 is a 200v N-channel Mesh overlay? MOSFET. Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure makes the STD5N20T4 suitable in converters for lighting applications.
STD5N20T4 Features
Typical RDS(on)=0.6Ω
Extremely high dv/dv capability
100% avalanche tested
Add suffix "T4" for rendering in tape & reel
STD5N20T4 Applications
High current, high-speed switching
Switch mode power supplies
DC-DC converters for telecom
Industrial
Lighting equipment
STD5N20T4 More Descriptions
Transistor MOSFET N-CH 200V 5A 3-Pin (2 Tab) DPAK T/R
N-Channel 200V - 0.6 Ohm - 5A PowerMESH(TM) II MOSFET
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 200V, 5A, D-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes
MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Switching; Voltage Vds Typ: 200V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
N-Channel 200V - 0.6 Ohm - 5A PowerMESH(TM) II MOSFET
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 200V, 5A, D-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes
MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Switching; Voltage Vds Typ: 200V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STD5N20T4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationDrain to Source Voltage (Vdss)Turn-Off Delay TimeView Compare
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STD5N20T4Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)MESH OVERLAY™e3yesObsolete1 (Unlimited)2SMD/SMTEAR99800mOhmMatte Tin (Sn)FET General Purpose Power200VMOSFET (Metal Oxide)GULL WING2605A30STD5N3R-PSSO-G2145W TcSingleENHANCEMENT MODE45WDRAIN18 nsN-ChannelSWITCHING800m Ω @ 2.5A, 10V4V @ 250μA350pF @ 25V5A Tc27nC @ 10V30ns10V±20V10 ns5A3VTO-252AA20V5A200V20A200V3 V2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free----
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--175°C TJCut Tape (CT)STripFET™ H6--Active1 (Unlimited)--EAR99--Other Transistors-MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIEDSTD52P---70W Tc-----P-Channel-12m Ω @ 26A, 10V2.5V @ 250μA3350pF @ 25V52A Tc33nC @ 4.5V-4.5V 10V±20V-52A-------------ROHS3 Compliant-Single30V-
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJTape & Reel (TR)STripFET™ III--Obsolete1 (Unlimited)--EAR99---24VMOSFET (Metal Oxide)--50A-STD50N3--60W TcSingle-60W-10 nsN-Channel-10.5m Ω @ 25A, 10V1.8V @ 250μA1400pF @ 25V50A Tc24nC @ 10V130ns5V 10V±20V16 ns50A--20V-24V-------NoROHS3 CompliantLead Free--27 ns
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ V-yesObsolete1 (Unlimited)2-EAR998.5MOhm-FET General Purpose Power-MOSFET (Metal Oxide)GULL WING---STD55N3R-PSSO-G2160W TcSingleENHANCEMENT MODE60WDRAIN15 nsN-ChannelSWITCHING8.5m Ω @ 27.5A, 10V4V @ 250μA1600pF @ 25V55A Tc25nC @ 10V15ns10V±20V6 ns55A--20V-40V220A------NoROHS3 CompliantLead Free--25 ns
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