STD5N20T4

STMicroelectronics STD5N20T4

Part Number:
STD5N20T4
Manufacturer:
STMicroelectronics
Ventron No:
2488070-STD5N20T4
Description:
MOSFET N-CH 200V 5A DPAK
ECAD Model:
Datasheet:
STD5N20T4

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Specifications
STMicroelectronics STD5N20T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD5N20T4.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    MESH OVERLAY™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    800mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD5N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    45W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    30ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Dual Supply Voltage
    200V
  • Nominal Vgs
    3 V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD5N20T4 Description
STD5N20T4 is a 200v N-channel Mesh overlay? MOSFET. Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure makes the STD5N20T4 suitable in converters for lighting applications.

STD5N20T4 Features
Typical RDS(on)=0.6Ω
Extremely high dv/dv capability
100% avalanche tested
Add suffix "T4" for rendering in tape & reel

STD5N20T4 Applications
High current, high-speed switching
Switch mode power supplies
DC-DC converters for telecom
Industrial
Lighting equipment
STD5N20T4 More Descriptions
Transistor MOSFET N-CH 200V 5A 3-Pin (2 Tab) DPAK T/R
N-Channel 200V - 0.6 Ohm - 5A PowerMESH(TM) II MOSFET
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 200V, 5A, D-PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes
MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Switching; Voltage Vds Typ: 200V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STD5N20T4.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Configuration
    Drain to Source Voltage (Vdss)
    Turn-Off Delay Time
    View Compare
  • STD5N20T4
    STD5N20T4
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    MESH OVERLAY™
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    800mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    GULL WING
    260
    5A
    30
    STD5N
    3
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    800m Ω @ 2.5A, 10V
    4V @ 250μA
    350pF @ 25V
    5A Tc
    27nC @ 10V
    30ns
    10V
    ±20V
    10 ns
    5A
    3V
    TO-252AA
    20V
    5A
    200V
    20A
    200V
    3 V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • STD52P3LLH6
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    175°C TJ
    Cut Tape (CT)
    STripFET™ H6
    -
    -
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    -
    Other Transistors
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STD52P
    -
    -
    -
    70W Tc
    -
    -
    -
    -
    -
    P-Channel
    -
    12m Ω @ 26A, 10V
    2.5V @ 250μA
    3350pF @ 25V
    52A Tc
    33nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    52A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Single
    30V
    -
  • STD50NH02LT4
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ III
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    EAR99
    -
    -
    -
    24V
    MOSFET (Metal Oxide)
    -
    -
    50A
    -
    STD50N
    3
    -
    -
    60W Tc
    Single
    -
    60W
    -
    10 ns
    N-Channel
    -
    10.5m Ω @ 25A, 10V
    1.8V @ 250μA
    1400pF @ 25V
    50A Tc
    24nC @ 10V
    130ns
    5V 10V
    ±20V
    16 ns
    50A
    -
    -
    20V
    -
    24V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    27 ns
  • STD55N4F5
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ V
    -
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    8.5MOhm
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    -
    STD55N
    3
    R-PSSO-G2
    1
    60W Tc
    Single
    ENHANCEMENT MODE
    60W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 27.5A, 10V
    4V @ 250μA
    1600pF @ 25V
    55A Tc
    25nC @ 10V
    15ns
    10V
    ±20V
    6 ns
    55A
    -
    -
    20V
    -
    40V
    220A
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    25 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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