STMicroelectronics STD3NK60Z-1

STD3NK60Z-1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 311pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STD3NK60Z-1 Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 9.6A.
a threshold voltage of 3.75V


STD3NK60Z-1 Applications
There are a lot of STMicroelectronics
STD3NK60Z-1 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools