STMicroelectronics STD30NE06L

Name: STD30NE06L
Brand: STMicroelectronics
SKU: 2488011-STD30NE06L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD30NE06L

Manufacturer:: STMicroelectronics

Ventron No:: 2488011-STD30NE06L

Description:: MOSFET N-CH 60V 30A DPAK

ECAD Model:

Datasheet:: STD30NE06L

Specifications

STMicroelectronics STD30NE06L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD30NE06L.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
30A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD30N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
55W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
55W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
41nC @ 5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
45 ns
Continuous Drain Current (ID)
30A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.03Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
120A
Avalanche Energy Rating (Eas)
100 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD30NE06L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.Peak drain current for this device is 120A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.

STD30NE06L Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 120A.

STD30NE06L Applications
There are a lot of STMicroelectronics
STD30NE06L applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STD30NE06L More Descriptions

N-Channel 60V - 0.025 Ohm - 30A - DPAK STripFET MOSFET
Power MOSFET Transistors N-Ch 60 Volt 30 Amp
Power Field-Effect Transistor, 30A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to STD30NE06L.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Number of Pins

Resistance

Subcategory

Turn On Delay Time

Turn-Off Delay Time

Threshold Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Factory Lead Time

Reach Compliance Code

Drain Current-Max (Abs) (ID)

View Compare
STD30NE06L

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

175°C TJ

Tube

STripFET™

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

60V

MOSFET (Metal Oxide)

GULL WING

260

30A

30

STD30N

3

R-PSSO-G2

Not Qualified

1

55W Tc

Single

ENHANCEMENT MODE

55W

DRAIN

N-Channel

SWITCHING

28m Ω @ 15A, 10V

2.5V @ 250μA

2370pF @ 25V

30A Tc

41nC @ 5V

100ns

5V 10V

±20V

45 ns

30A

TO-252AA

20V

0.03Ohm

60V

120A

100 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD3NK60ZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

600V

MOSFET (Metal Oxide)

GULL WING

260

2.4A

30

STD3N

3

R-PSSO-G2

-

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

N-Channel

SWITCHING

3.6 Ω @ 1.2A, 10V

4.5V @ 50μA

311pF @ 25V

2.4A Tc

11.8nC @ 10V

14ns

10V

±30V

14 ns

2.4A

TO-252AA

30V

-

600V

9.6A

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

3

3.6Ohm

FET General Purpose Power

9 ns

19 ns

3.75V

3.75 V

2.4mm

6.6mm

6.2mm

No SVHC

No

-

-

-

STD30NE06L vs STD3NK60ZT4
STD3NK90ZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

900V

MOSFET (Metal Oxide)

GULL WING

260

3A

30

STD3N

3

R-PSSO-G2

Not Qualified

1

90W Tc

Single

ENHANCEMENT MODE

90W

-

N-Channel

SWITCHING

4.8 Ω @ 1.5A, 10V

4.5V @ 50μA

590pF @ 25V

3A Tc

22.7nC @ 10V

7ns

10V

±30V

18 ns

3A

TO-252AA

30V

-

900V

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

3

4.8Ohm

FET General Purpose Power

18 ns

45 ns

3.75V

-

2.4mm

6.6mm

6.2mm

No SVHC

-

12 Weeks

not_compliant

3A

STD30NE06L vs STD3NK90ZT4
STD36NH02L

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

STD36

3

R-PSSO-G2

Not Qualified

1

45W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

N-Channel

SWITCHING

14.5m Ω @ 15A, 10V

2.5V @ 250μA

860pF @ 15V

30A Tc

20nC @ 10V

70ns

5V 10V

±20V

15 ns

30A

-

20V

0.026Ohm

24V

120A

200 mJ

ROHS3 Compliant

-

-

3

-

FET General Purpose Power

-

22 ns

-

-

-

-

-

-

-

-

not_compliant

-

STD30NE06L vs STD36NH02L