STMicroelectronics STD2NK100Z
- Part Number:
- STD2NK100Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2477960-STD2NK100Z
- Description:
- MOSFET N-CH 1000V 1.85A DPAK
- Datasheet:
- STD2NK100Z
STMicroelectronics STD2NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD2NK100Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance8.5Ohm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Base Part NumberSTD2N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Turn On Delay Time7.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5 Ω @ 900mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds499pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.85A Tc
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Drain to Source Voltage (Vdss)1000V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Turn-Off Delay Time41.5 ns
- Continuous Drain Current (ID)1.85A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)2A
- Drain to Source Breakdown Voltage1kV
- Pulsed Drain Current-Max (IDM)7.4A
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD2NK100Z Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 499pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.85A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 41.5 ns.Peak drain current for this device is 7.4A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.75V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
STD2NK100Z Features
a continuous drain current (ID) of 1.85A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 41.5 ns
based on its rated peak drain current 7.4A.
a threshold voltage of 3.75V
a 1000V drain to source voltage (Vdss)
STD2NK100Z Applications
There are a lot of STMicroelectronics
STD2NK100Z applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 499pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.85A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 41.5 ns.Peak drain current for this device is 7.4A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.75V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
STD2NK100Z Features
a continuous drain current (ID) of 1.85A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 41.5 ns
based on its rated peak drain current 7.4A.
a threshold voltage of 3.75V
a 1000V drain to source voltage (Vdss)
STD2NK100Z Applications
There are a lot of STMicroelectronics
STD2NK100Z applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STD2NK100Z More Descriptions
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
N-Channel 1000 V 8.5 Ohm Surface Mount SuperMESH Power MosFet - TO-252-3
Mosfet, N-Ch, 1Kv, 1.85A, To-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.85A; On Resistance Rds(On):6.25Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STD2NK100Z.
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-Channel 1000 V 8.5 Ohm Surface Mount SuperMESH Power MosFet - TO-252-3
Mosfet, N-Ch, 1Kv, 1.85A, To-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.85A; On Resistance Rds(On):6.25Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STD2NK100Z.
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The three parts on the right have similar specifications to STD2NK100Z.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationTerminal FinishAdditional FeatureVoltage - Rated DCReach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusRise TimeFall Time (Typ)Dual Supply VoltageNominal VgsNumber of ChannelsCase ConnectionMax Junction Temperature (Tj)View Compare
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STD2NK100ZACTIVE (Last Updated: 8 months ago)12 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Active1 (Unlimited)2EAR998.5OhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WING260STD2N3R-PSSO-G2170W TcSingleENHANCEMENT MODE70W7.2 nsN-ChannelSWITCHING8.5 Ω @ 900mA, 10V4.5V @ 50μA499pF @ 25V1.85A Tc16nC @ 10V1000V10V±30V41.5 ns1.85A3.75VTO-252AA30V2A1kV7.4A2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free----------------
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---Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Obsolete1 (Unlimited)2EAR997OhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WING260-3R-PSSO-G2145W TcSingleENHANCEMENT MODE45W-N-ChannelSWITCHING7 Ω @ 800mA, 10V4.5V @ 50μA280pF @ 25V1.6A Tc11.4nC @ 10V-10V±30V20 ns1.6A-TO-252AA30V-700V6.4A---No SVHC-ROHS3 CompliantLead FreeSMD/SMTMatte Tin (Sn) - annealedAVALANCHE RATED700Vnot_compliant1.6A30Not Qualified17ns35 ns700V3.75 V---
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---Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJCut Tape (CT)Automotive, AEC-Q101, STripFET™-Active1 (Unlimited)2EAR99--MOSFET (Metal Oxide)GULL WING-STD25N-R-PSSO-G21110W TcSingleENHANCEMENT MODE110W15 nsN-ChannelSWITCHING125m Ω @ 10A, 10V4V @ 250μA940pF @ 25V18A Tc39nC @ 10V-10V±20V40 ns18A--20V-200V72A2.63mm6.6mm6.2mm-NoROHS3 CompliantLead Free--------30ns10 ns--1DRAIN175°C
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ACTIVE (Last Updated: 8 months ago)12 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Active1 (Unlimited)2EAR996.5OhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WING260STD2N3R-PSSO-G2170W TcSingleENHANCEMENT MODE70W21 nsN-ChannelSWITCHING6.5 Ω @ 1.05A, 10V4.5V @ 50μA485pF @ 25V2.1A Tc27nC @ 10V-10V±30V43 ns2.1A3.75VTO-252AA30V-900V8.4A2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free--AVALANCHE RATED900V-2.1A30-11ns40 ns-----
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