STD2NK100Z

STMicroelectronics STD2NK100Z

Part Number:
STD2NK100Z
Manufacturer:
STMicroelectronics
Ventron No:
2477960-STD2NK100Z
Description:
MOSFET N-CH 1000V 1.85A DPAK
ECAD Model:
Datasheet:
STD2NK100Z

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Specifications
STMicroelectronics STD2NK100Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD2NK100Z.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    8.5Ohm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    STD2N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    70W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    70W
  • Turn On Delay Time
    7.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5 Ω @ 900mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    499pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.85A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Turn-Off Delay Time
    41.5 ns
  • Continuous Drain Current (ID)
    1.85A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain to Source Breakdown Voltage
    1kV
  • Pulsed Drain Current-Max (IDM)
    7.4A
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD2NK100Z Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 499pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.85A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 41.5 ns.Peak drain current for this device is 7.4A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3.75V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

STD2NK100Z Features
a continuous drain current (ID) of 1.85A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 41.5 ns
based on its rated peak drain current 7.4A.
a threshold voltage of 3.75V
a 1000V drain to source voltage (Vdss)


STD2NK100Z Applications
There are a lot of STMicroelectronics
STD2NK100Z applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STD2NK100Z More Descriptions
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
N-Channel 1000 V 8.5 Ohm Surface Mount SuperMESH™ Power MosFet - TO-252-3
Mosfet, N-Ch, 1Kv, 1.85A, To-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.85A; On Resistance Rds(On):6.25Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STD2NK100Z.
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to STD2NK100Z.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Termination
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Rise Time
    Fall Time (Typ)
    Dual Supply Voltage
    Nominal Vgs
    Number of Channels
    Case Connection
    Max Junction Temperature (Tj)
    View Compare
  • STD2NK100Z
    STD2NK100Z
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    8.5Ohm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    STD2N
    3
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    7.2 ns
    N-Channel
    SWITCHING
    8.5 Ω @ 900mA, 10V
    4.5V @ 50μA
    499pF @ 25V
    1.85A Tc
    16nC @ 10V
    1000V
    10V
    ±30V
    41.5 ns
    1.85A
    3.75V
    TO-252AA
    30V
    2A
    1kV
    7.4A
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD2NK70ZT4
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    7Ohm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    3
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    -
    N-Channel
    SWITCHING
    7 Ω @ 800mA, 10V
    4.5V @ 50μA
    280pF @ 25V
    1.6A Tc
    11.4nC @ 10V
    -
    10V
    ±30V
    20 ns
    1.6A
    -
    TO-252AA
    30V
    -
    700V
    6.4A
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    SMD/SMT
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    700V
    not_compliant
    1.6A
    30
    Not Qualified
    17ns
    35 ns
    700V
    3.75 V
    -
    -
    -
  • STD25NF20
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, STripFET™
    -
    Active
    1 (Unlimited)
    2
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    STD25N
    -
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    15 ns
    N-Channel
    SWITCHING
    125m Ω @ 10A, 10V
    4V @ 250μA
    940pF @ 25V
    18A Tc
    39nC @ 10V
    -
    10V
    ±20V
    40 ns
    18A
    -
    -
    20V
    -
    200V
    72A
    2.63mm
    6.6mm
    6.2mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    30ns
    10 ns
    -
    -
    1
    DRAIN
    175°C
  • STD2NK90ZT4
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    6.5Ohm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    STD2N
    3
    R-PSSO-G2
    1
    70W Tc
    Single
    ENHANCEMENT MODE
    70W
    21 ns
    N-Channel
    SWITCHING
    6.5 Ω @ 1.05A, 10V
    4.5V @ 50μA
    485pF @ 25V
    2.1A Tc
    27nC @ 10V
    -
    10V
    ±30V
    43 ns
    2.1A
    3.75V
    TO-252AA
    30V
    -
    900V
    8.4A
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    AVALANCHE RATED
    900V
    -
    2.1A
    30
    -
    11ns
    40 ns
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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