STMicroelectronics STD1NK60T4
- Part Number:
- STD1NK60T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3554101-STD1NK60T4
- Description:
- MOSFET N-CH 600V 1A DPAK
- Datasheet:
- STD1NK60T4
STMicroelectronics STD1NK60T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD1NK60T4.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierTO-252-P032P
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance8.5Ohm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Base Part NumberSTD1NK
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max30W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation30W
- Turn On Delay Time6.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds156pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)1A
- Threshold Voltage3V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)1A
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)4A
- Avalanche Energy Rating (Eas)25 mJ
- Max Junction Temperature (Tj)150°C
- Height2.63mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD1NK60T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD1NK60T4 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V
STD1NK60T4 Applications
There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD1NK60T4 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V
STD1NK60T4 Applications
There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STD1NK60T4 More Descriptions
Power Mosfet, N Channel, 500 Ma, 600 V, 8 Ohm, 10 V, 3 V |Stmicroelectronics STD1NK60T4
N-CHANNEL 600V - 8 Ohm - 1A DPAK SuperMESH™ PowerMOSFET
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK packageCiiva Crawler
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:600V; On Resistance
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
N-CHANNEL 600V - 8 Ohm - 1A DPAK SuperMESH™ PowerMOSFET
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK packageCiiva Crawler
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:600V; On Resistance
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STD1NK60T4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingBase Part NumberPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Max Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Terminal PositionConfigurationCase ConnectionDS Breakdown Voltage-MinContact PlatingView Compare
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STD1NK60T4ACTIVE (Last Updated: 8 months ago)12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICONTO-252-P032P-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Active1 (Unlimited)2EAR998.5OhmMatte Tin (Sn) - annealedFET General Purpose Power600VMOSFET (Metal Oxide)GULL WING2601ASTD1NK3R-PSSO-G21130W TcSingleENHANCEMENT MODE30W6.5 nsN-ChannelSWITCHING8.5 Ω @ 500mA, 10V3.7V @ 250μA156pF @ 25V1A Tc10nC @ 10V5ns10V±30V25 ns19 ns1A3VTO-252AA30V1A600V4A25 mJ150°C2.63mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free--------
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ACTIVE (Last Updated: 8 months ago)-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---175°C TJTape & Reel (TR)Automotive, AEC-Q101, STripFET™ F6-Active1 (Unlimited)-EAR99----MOSFET (Metal Oxide)-NOT SPECIFIED-STD15----35W Tc----P-Channel-160m Ω @ 5A, 10V4V @ 250μA340pF @ 48V10A Tc6.4nC @ 10V-10V±20V--10A-------------ROHS3 Compliant-NOT SPECIFIED60V-----
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-150°C TJTape & Reel (TR)FDmesh™ IIe3Obsolete1 (Unlimited)2EAR99-Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING260-STD123R-PSSO-G21-100W Tc-ENHANCEMENT MODE100W12 nsN-ChannelSWITCHING380m Ω @ 5.5A, 10V5V @ 250μA850pF @ 50V11A Tc30nC @ 10V15ns10V±25V17 ns40 ns11A-TO-252AA25V--44A------NoROHS3 CompliantLead Free30500VSINGLESINGLEDRAIN500V-
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ACTIVE (Last Updated: 8 months ago)12 WeeksSurface Mount, Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON--55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99--FET General Purpose Power-MOSFET (Metal Oxide)-260-STD1NK3-1-30W TcSingleENHANCEMENT MODE30W6.5 nsN-ChannelSWITCHING8.5 Ω @ 500mA, 10V3.7V @ 250μA156pF @ 25V1A Tc10nC @ 10V5ns10V±30V25 ns19 ns1A3V-30V1A600V4A25 mJ-2.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free30-----Tin
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