STD1NK60T4

STMicroelectronics STD1NK60T4

Part Number:
STD1NK60T4
Manufacturer:
STMicroelectronics
Ventron No:
3554101-STD1NK60T4
Description:
MOSFET N-CH 600V 1A DPAK
ECAD Model:
Datasheet:
STD1NK60T4

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Specifications
STMicroelectronics STD1NK60T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD1NK60T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    TO-252-P032P
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    8.5Ohm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Base Part Number
    STD1NK
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    30W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    30W
  • Turn On Delay Time
    6.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    156pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    1A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    4A
  • Avalanche Energy Rating (Eas)
    25 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    2.63mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD1NK60T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD1NK60T4 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V


STD1NK60T4 Applications
There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
STD1NK60T4 More Descriptions
Power Mosfet, N Channel, 500 Ma, 600 V, 8 Ohm, 10 V, 3 V |Stmicroelectronics STD1NK60T4
N-CHANNEL 600V - 8 Ohm - 1A DPAK SuperMESH™ PowerMOSFET
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK packageCiiva Crawler
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:600V; On Resistance
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to STD1NK60T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Terminal Position
    Configuration
    Case Connection
    DS Breakdown Voltage-Min
    Contact Plating
    View Compare
  • STD1NK60T4
    STD1NK60T4
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    TO-252-P032P
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    8.5Ohm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    260
    1A
    STD1NK
    3
    R-PSSO-G2
    1
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    6.5 ns
    N-Channel
    SWITCHING
    8.5 Ω @ 500mA, 10V
    3.7V @ 250μA
    156pF @ 25V
    1A Tc
    10nC @ 10V
    5ns
    10V
    ±30V
    25 ns
    19 ns
    1A
    3V
    TO-252AA
    30V
    1A
    600V
    4A
    25 mJ
    150°C
    2.63mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • STD15P6F6AG
    ACTIVE (Last Updated: 8 months ago)
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, STripFET™ F6
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    STD15
    -
    -
    -
    -
    35W Tc
    -
    -
    -
    -
    P-Channel
    -
    160m Ω @ 5A, 10V
    4V @ 250μA
    340pF @ 48V
    10A Tc
    6.4nC @ 10V
    -
    10V
    ±20V
    -
    -
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    60V
    -
    -
    -
    -
    -
  • STD12NM50ND
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -
    150°C TJ
    Tape & Reel (TR)
    FDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    STD12
    3
    R-PSSO-G2
    1
    -
    100W Tc
    -
    ENHANCEMENT MODE
    100W
    12 ns
    N-Channel
    SWITCHING
    380m Ω @ 5.5A, 10V
    5V @ 250μA
    850pF @ 50V
    11A Tc
    30nC @ 10V
    15ns
    10V
    ±25V
    17 ns
    40 ns
    11A
    -
    TO-252AA
    25V
    -
    -
    44A
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    30
    500V
    SINGLE
    SINGLE
    DRAIN
    500V
    -
  • STD1NK60-1
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Surface Mount, Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    260
    -
    STD1NK
    3
    -
    1
    -
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    6.5 ns
    N-Channel
    SWITCHING
    8.5 Ω @ 500mA, 10V
    3.7V @ 250μA
    156pF @ 25V
    1A Tc
    10nC @ 10V
    5ns
    10V
    ±30V
    25 ns
    19 ns
    1A
    3V
    -
    30V
    1A
    600V
    4A
    25 mJ
    -
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    30
    -
    -
    -
    -
    -
    Tin
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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