STMicroelectronics STD16N65M2
- Part Number:
- STD16N65M2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482165-STD16N65M2
- Description:
- MOSFET N-CH 650V 11A DPAK
- ECAD Model:
-
- Datasheet:
- STD16N65M2
STMicroelectronics STD16N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD16N65M2.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesMDmesh™ M2
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTD16
- Power Dissipation-Max110W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs360m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds718pF @ 100V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs19.5nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Continuous Drain Current (ID)11A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD16N65M2 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 718pF @ 100V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STD16N65M2 Features
a continuous drain current (ID) of 11A
a 650V drain to source voltage (Vdss)
STD16N65M2 Applications
There are a lot of STMicroelectronics
STD16N65M2 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 718pF @ 100V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STD16N65M2 Features
a continuous drain current (ID) of 11A
a 650V drain to source voltage (Vdss)
STD16N65M2 Applications
There are a lot of STMicroelectronics
STD16N65M2 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STD16N65M2 More Descriptions
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Trans MOSFET N-CH 650V 11A 3-Pin(2 Tab) DPAK T/R
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
MOSFET, N-CH, 650V, 11A, TO-252;
Power MOSFETs, 650V, 11A, DPAK, Tape and ReelSTMicroelectronics SCT
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~ 150¡Í@(Tj) DPAK MOSFETs ROHS
MOSFET, N-CH, 650V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Trans MOSFET N-CH 650V 11A 3-Pin(2 Tab) DPAK T/R
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
MOSFET, N-CH, 650V, 11A, TO-252;
Power MOSFETs, 650V, 11A, DPAK, Tape and ReelSTMicroelectronics SCT
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~ 150¡Í@(Tj) DPAK MOSFETs ROHS
MOSFET, N-CH, 650V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
The three parts on the right have similar specifications to STD16N65M2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusLead FreeNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeJEDEC-95 CodeGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningContact PlatingElement ConfigurationThreshold VoltageDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCView Compare
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STD16N65M2ACTIVE (Last Updated: 8 months ago)16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJCut Tape (CT)MDmesh™ M2Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTD16110W TcN-Channel360m Ω @ 5.5A, 10V4V @ 250μA718pF @ 100V11A Tc19.5nC @ 10V650V10V±25V11AROHS3 CompliantLead Free------------------------------------ -
ACTIVE (Last Updated: 8 months ago)-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63175°C TJTape & Reel (TR)Automotive, AEC-Q101, STripFET™ F6Active1 (Unlimited)EAR99MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIEDSTD1535W TcP-Channel160m Ω @ 5A, 10V4V @ 250μA340pF @ 48V10A Tc6.4nC @ 10V60V10V±20V10AROHS3 Compliant------------------------------------
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--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63150°C TJTape & Reel (TR)FDmesh™ IIObsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)26030STD12100W TcN-Channel380m Ω @ 5.5A, 10V5V @ 250μA850pF @ 50V11A Tc30nC @ 10V500V10V±25V11AROHS3 CompliantLead Free3SILICONe32Matte Tin (Sn) - annealedFET General Purpose PowerSINGLEGULL WING3R-PSSO-G21SINGLEENHANCEMENT MODE100WDRAIN12 nsSWITCHING15ns17 ns40 nsTO-252AA25V44A500VNo----------
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ACTIVE (Last Updated: 8 months ago)12 WeeksSurface Mount, Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~150°C TJTubeSuperMESH™Active1 (Unlimited)EAR99MOSFET (Metal Oxide)26030STD1NK30W TcN-Channel8.5 Ω @ 500mA, 10V3.7V @ 250μA156pF @ 25V1A Tc10nC @ 10V-10V±30V1AROHS3 CompliantLead Free3SILICONe33-FET General Purpose Power--3-1-ENHANCEMENT MODE30W-6.5 nsSWITCHING5ns25 ns19 ns-30V4A-NoTinSingle3V1A600V25 mJ2.4mm6.6mm6.2mmNo SVHC
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