STMicroelectronics STD150NH02LT4

Name: STD150NH02LT4
Brand: STMicroelectronics
SKU: 2488568-STD150NH02LT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD150NH02LT4

Manufacturer:: STMicroelectronics

Ventron No:: 2488568-STD150NH02LT4

Description:: MOSFET N-CH 24V 150A DPAK

ECAD Model:

Datasheet:: STD150NH02L(-1)

Specifications

STMicroelectronics STD150NH02LT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD150NH02LT4.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ III
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.5mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
24V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
150A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD15
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4450pF @ 15V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
93nC @ 10V
Rise Time
224ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
69 ns
Continuous Drain Current (ID)
150A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
24V
Pulsed Drain Current-Max (IDM)
600A
Avalanche Energy Rating (Eas)
500 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD150NH02LT4 Description
STD150NH02LT4 is an N-channel 24V STripFET? IlI Power MOSFET. The STD150NH02L utilizes the latest advanced design rules of ST?ˉs proprietary STripFET? technology. This novel 0.6|ì process utilizes also unique metallization techniques that couple with a "bondless" assembly technique resulting in an outstanding performance with a standard DPAK outline.

STD150NH02LT4 Features
RDS(on) * Qg industry?ˉs benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device

STD150NH02LT4 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STD150NH02LT4 More Descriptions

N-CHANNEL 24V - 0.0035 OHM - 150A ClipPAK STripFET III MOSFET FOR DC-DC CONVERSION
Power MOSFET Transistors N-Ch 24 Volt 150 Amp
N CHANNEL MOSFET, 24V, 150A CLIPPAK, FULL REEL
Power Field-Effect Transistor, 150A I(D), 24V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoC and 2-years warranty / RFQ for pricing
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to STD150NH02LT4.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Number of Pins

Turn On Delay Time

Drain to Source Voltage (Vdss)

Height

Length

Width

Radiation Hardening

Terminal Position

Configuration

DS Breakdown Voltage-Min

Contact Plating

Threshold Voltage

Drain Current-Max (Abs) (ID)

REACH SVHC

View Compare
STD150NH02LT4

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

3.5mOhm

Matte Tin (Sn)

LOW THRESHOLD

FET General Purpose Power

24V

MOSFET (Metal Oxide)

GULL WING

260

not_compliant

150A

30

STD15

4

R-PSSO-G2

Not Qualified

1

125W Tc

Single

ENHANCEMENT MODE

125W

DRAIN

N-Channel

SWITCHING

3.5m Ω @ 75A, 10V

1.8V @ 250μA

4450pF @ 15V

150A Tc

93nC @ 10V

224ns

5V 10V

±20V

40 ns

69 ns

150A

TO-252AA

20V

24V

600A

500 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD13N60M2

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™ II Plus

-

Active

1 (Unlimited)

2

EAR99

380mOhm

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

-

-

-

STD13

-

-

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

4V @ 250μA

580pF @ 100V

11A Tc

17nC @ 10V

10ns

10V

±25V

9.5 ns

41 ns

11A

-

25V

650V

44A

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

2

11 ns

600V

2.4mm

6.6mm

6.2mm

No

-

-

-

-

-

-

-

STD150NH02LT4 vs STD13N60M2
STD12NM50ND

STMicroelectronics

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

-

30

STD12

3

R-PSSO-G2

-

1

100W Tc

-

ENHANCEMENT MODE

100W

DRAIN

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

5V @ 250μA

850pF @ 50V

11A Tc

30nC @ 10V

15ns

10V

±25V

17 ns

40 ns

11A

TO-252AA

25V

-

44A

-

ROHS3 Compliant

Lead Free

-

-

3

12 ns

500V

-

-

-

No

SINGLE

SINGLE

500V

-

-

-

-

STD150NH02LT4 vs STD12NM50ND
STD1NK60-1

STMicroelectronics

Surface Mount, Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

-

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

260

-

-

30

STD1NK

3

-

-

1

30W Tc

Single

ENHANCEMENT MODE

30W

-

N-Channel

SWITCHING

8.5 Ω @ 500mA, 10V

3.7V @ 250μA

156pF @ 25V

1A Tc

10nC @ 10V

5ns

10V

±30V

25 ns

19 ns

1A

-

30V

600V

4A

25 mJ

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

12 Weeks

3

6.5 ns

-

2.4mm

6.6mm

6.2mm

No

-

-

-

Tin

3V

1A

No SVHC

STD150NH02LT4 vs STD1NK60-1