STMicroelectronics STB6NK90ZT4

Name: STB6NK90ZT4
Brand: STMicroelectronics
SKU: 2482196-STB6NK90ZT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB6NK90ZT4

Manufacturer:: STMicroelectronics

Ventron No:: 2482196-STB6NK90ZT4

Description:: MOSFET N-CH 900V 5.8A D2PAK

ECAD Model:

Datasheet:: STB6NK90ZT4

Specifications

STMicroelectronics STB6NK90ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB6NK90ZT4.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
1.56Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
5.8A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB6N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.8A Tc
Gate Charge (Qg) (Max) @ Vgs
60.5nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
5.8A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
900V
Nominal Vgs
3.75 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The STB6NK90ZT4 is an N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH? Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages. The SuperMESHTM N-channel Power MOSFET STB6NK90ZT4 provides Zener protection and a low gate charge. The SuperMESHTM is created by optimizing ST's well-known strip-based PowerMESHTM pattern to its maximum potential. Aside from lowering ON resistance, extra care is made to ensure that the most demanding applications have excellent dV/dt capacity. This MOSFET is an addition to ST's high-voltage MOSFET lineup.

Features
Gate charge minimized
Zener-protected
Extremely high dv/dt capability
100% Avalanche tested
Very low intrinsic capacitance
Very good manufacturing repeatability

Applications
Switching applications
Industrial
Power management
Small motor control
Automotive applications

STB6NK90ZT4 More Descriptions

N-channel 900 V, 1.56 Ohm, 5.8 A D2PAK Zener-protected SuperMESH(TM) Power MOSFET
Trans MOSFET N-CH 900V 5.8A 3-Pin (2 Tab) D2PAK T/R
Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3
MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.8A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STB6NK90ZT4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Case Connection

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Number of Channels

View Compare
STB6NK90ZT4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

4.535924g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

EAR99

1.56Ohm

Matte Tin (Sn) - annealed

AVALANCHE RATED, HIGH VOLTAGE

FET General Purpose Power

900V

MOSFET (Metal Oxide)

GULL WING

245

5.8A

30

STB6N

3

R-PSSO-G2

1

140W Tc

Single

ENHANCEMENT MODE

140W

17 ns

N-Channel

SWITCHING

2 Ω @ 2.9A, 10V

4.5V @ 100μA

1350pF @ 25V

5.8A Tc

60.5nC @ 10V

45ns

10V

±30V

20 ns

20 ns

5.8A

3.75V

30V

900V

3.75 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STB6N65K3

STMicroelectronics

-

-

-

-

D2PAK

-

-

-

-

Tape & Reel (TR)

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

STB6N

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

STB6NK90ZT4 vs STB6N65K3
STB60NH02LT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ III

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn)

-

FET General Purpose Power

24V

MOSFET (Metal Oxide)

GULL WING

245

60A

30

STB60N

4

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

10 ns

N-Channel

SWITCHING

10.5m Ω @ 30A, 10V

2.5V @ 250μA

1400pF @ 15V

60A Tc

32nC @ 10V

130ns

5V 10V

±20V

16 ns

27 ns

60A

-

20V

24V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

yes

DRAIN

0.0105Ohm

240A

280 mJ

-

STB6NK90ZT4 vs STB60NH02LT4
STB6N65M2

STMicroelectronics

-

26 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

3.949996g

-

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

STB6N

-

-

-

60W Tc

-

-

-

19 ns

N-Channel

-

1.35 Ω @ 2A, 10V

4V @ 250μA

226pF @ 100V

4A Tc

9.8nC @ 10V

7ns

10V

±25V

20 ns

6.5 ns

4A

3V

25V

650V

-

-

-

-

No SVHC

-

ROHS3 Compliant

-

-

-

-

-

-

1

STB6NK90ZT4 vs STB6N65M2