STMicroelectronics STB60NF10-1
- Part Number:
- STB60NF10-1
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483620-STB60NF10-1
- Description:
- MOSFET N-CH 100V 80A I2PAK
- Datasheet:
- STB60NF10-1
STMicroelectronics STB60NF10-1 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB60NF10-1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTB60N
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs104nC @ 10V
- Rise Time56ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)23 ns
- Turn-Off Delay Time82 ns
- Continuous Drain Current (ID)80A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Avalanche Energy Rating (Eas)485 mJ
- RoHS StatusROHS3 Compliant
STB60NF10-1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 485 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4270pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 82 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB60NF10-1 Features
the avalanche energy rating (Eas) is 485 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 82 ns
STB60NF10-1 Applications
There are a lot of STMicroelectronics
STB60NF10-1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 485 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4270pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 82 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB60NF10-1 Features
the avalanche energy rating (Eas) is 485 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 82 ns
STB60NF10-1 Applications
There are a lot of STMicroelectronics
STB60NF10-1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STB60NF10-1 More Descriptions
Power MOSFET Transistors N Ch 100V 0.019Ohm 80A
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
CAP CER 0.068UF 50V C0G 1210
OEMs, CMs ONLY (NO BROKERS)
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
CAP CER 0.068UF 50V C0G 1210
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to STB60NF10-1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)RoHS StatusResistanceTurn On Delay TimeThreshold VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePbfree CodeTerminationTerminal FormJESD-30 CodeDual Supply VoltageLifecycle StatusVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)View Compare
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STB60NF10-1Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTubeSTripFET™ IIe3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)225NOT SPECIFIEDSTB60N3Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING23m Ω @ 40A, 10V4V @ 250μA4270pF @ 25V80A Tc104nC @ 10V56ns10V±20V23 ns82 ns80A20V100V485 mJROHS3 Compliant---------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-150°C TJTape & Reel (TR)SuperMESH3™-Obsolete1 (Unlimited)-EAR99--MOSFET (Metal Oxide)--STB6N--190W Tc--90W-N-Channel-1.2 Ω @ 2.8A, 10V4.5V @ 50μA875pF @ 50V5.5A Tc34nC @ 10V12ns10V±30V20 ns49 ns5.5A30V620V-ROHS3 Compliant1.2Ohm22 ns3.75V3.75 V4.6mm10.75mm10.4mmNo SVHCNoLead Free----------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIIe3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)24530STB60N3-1110W TcSingleENHANCEMENT MODE110WDRAINN-ChannelSWITCHING8.5m Ω @ 32A, 10V4V @ 250μA2200pF @ 25V80A Tc45nC @ 10V50ns10V±20V11.5 ns35 ns80A20V55V-ROHS3 Compliant8.5MOhm20 ns4V4 V4.6mm10.75mm10.4mmNo SVHCNoLead FreeyesSMD/SMTGULL WINGR-PSSO-G255V-----
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)SuperMESH™e3Not For New Designs1 (Unlimited)2EAR99Matte Tin (Sn) - annealedFET General Purpose PowerMOSFET (Metal Oxide)24530STB6N3-1110W TcSingleENHANCEMENT MODE110W-N-ChannelSWITCHING1.2 Ω @ 3A, 10V4.5V @ 100μA905pF @ 25V6A Tc46nC @ 10V14ns10V±30V19 ns47 ns6A30V600V-ROHS3 Compliant-14 ns3.75V-4.6mm10.75mm10.4mmNo SVHCNoLead Free--GULL WINGR-PSSO-G2-ACTIVE (Last Updated: 7 months ago)600V6A6A24A
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