STMicroelectronics STB35NF10T4
- Part Number:
- STB35NF10T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482008-STB35NF10T4
- Description:
- MOSFET N-CH 100V 40A D2PAK
- Datasheet:
- ST(B,P)35NF10
STMicroelectronics STB35NF10T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB35NF10T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating40A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB35N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max115W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation115W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 17.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Nominal Vgs3 V
- Height4.6mm
- Length10.75mm
- Width10.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB35NF10T4 Overview
The maximum input capacitance of this device is 1550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STB35NF10T4 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
a threshold voltage of 3V
STB35NF10T4 Applications
There are a lot of STMicroelectronics
STB35NF10T4 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STB35NF10T4 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
a threshold voltage of 3V
STB35NF10T4 Applications
There are a lot of STMicroelectronics
STB35NF10T4 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STB35NF10T4 More Descriptions
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to STB35NF10T4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistanceReach Compliance CodeQualification StatusAvalanche Energy Rating (Eas)Pbfree CodePulsed Drain Current-Max (IDM)View Compare
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STB35NF10T4ACTIVE (Last Updated: 7 months ago)12 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™ IIe3Active1 (Unlimited)2SMD/SMTEAR99Matte Tin (Sn)FET General Purpose Power100VMOSFET (Metal Oxide)GULL WING24540A30STB35N3R-PSSO-G21115W TcSingleENHANCEMENT MODE115WDRAIN17 nsN-ChannelSWITCHING35m Ω @ 17.5A, 10V4V @ 250μA1550pF @ 25V40A Tc55nC @ 10V60ns10V±20V15 ns60 ns40A3V20V100V100V3 V4.6mm10.75mm10.4mmNo SVHCNoROHS3 CompliantLead Free-------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)STripFET™-Obsolete1 (Unlimited)2SMD/SMTEAR99-FET General Purpose Power-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIEDSTB300N3R-PSSO-G21300W TcSingleENHANCEMENT MODE300W--N-ChannelSWITCHING1.8m Ω @ 80A, 10V2V @ 250μA7055pF @ 15V120A Tc109.4nC @ 10V275ns10V±20V94.4 ns138 ns80A2V20V24V24V2 V---No SVHC-ROHS3 CompliantLead Free1.8MOhmunknownNot Qualified---
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON150°C TJTape & Reel (TR)MDmesh™ IIe3Obsolete1 (Unlimited)2-EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING245-30STB30N4R-PSSO-G21190W TcSingleENHANCEMENT MODE190WISOLATED-N-ChannelSWITCHING115m Ω @ 13.5A, 10V4V @ 250μA2740pF @ 50V27A Tc94nC @ 10V20ns10V±25V60 ns115 ns27A-25V500V-------ROHS3 Compliant--not_compliantNot Qualified900 mJ--
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON150°C TJTape & Reel (TR)SuperMESH3™e3Obsolete1 (Unlimited)2-EAR99Matte Tin (Sn) - annealedFET General Purpose Power-MOSFET (Metal Oxide)GULL WING245--STB3N4R-PSSO-G2145W TcSingleENHANCEMENT MODE45W-9 nsN-ChannelSWITCHING2.5 Ω @ 1.4A, 10V4.5V @ 50μA385pF @ 25V2.7A Tc13nC @ 10V6.8ns10V±30V15.6 ns22 ns2.7A3.75V30V620V--4.6mm10.75mm10.4mmNo SVHCNoROHS3 CompliantLead Free2.5Ohm--100 mJyes10.8A
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