STB35NF10T4

STMicroelectronics STB35NF10T4

Part Number:
STB35NF10T4
Manufacturer:
STMicroelectronics
Ventron No:
2482008-STB35NF10T4
Description:
MOSFET N-CH 100V 40A D2PAK
ECAD Model:
Datasheet:
ST(B,P)35NF10

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  • STB35NF10T4 Detail Images
  • STB35NF10T4 Detail Images
  • STB35NF10T4 Detail Images
Specifications
STMicroelectronics STB35NF10T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB35NF10T4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    40A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB35N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    115W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    115W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 17.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1550pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    55nC @ 10V
  • Rise Time
    60ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    60 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Nominal Vgs
    3 V
  • Height
    4.6mm
  • Length
    10.75mm
  • Width
    10.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB35NF10T4 Overview
The maximum input capacitance of this device is 1550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STB35NF10T4 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
a threshold voltage of 3V


STB35NF10T4 Applications
There are a lot of STMicroelectronics
STB35NF10T4 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STB35NF10T4 More Descriptions
N-Channel 100V - 0.030 Ohm - 40A - D2PAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N CH, 100V, 40A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
STB35NF10T4 Detail Images
Product Comparison
The three parts on the right have similar specifications to STB35NF10T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Resistance
    Reach Compliance Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    Pbfree Code
    Pulsed Drain Current-Max (IDM)
    View Compare
  • STB35NF10T4
    STB35NF10T4
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™ II
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    GULL WING
    245
    40A
    30
    STB35N
    3
    R-PSSO-G2
    1
    115W Tc
    Single
    ENHANCEMENT MODE
    115W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    35m Ω @ 17.5A, 10V
    4V @ 250μA
    1550pF @ 25V
    40A Tc
    55nC @ 10V
    60ns
    10V
    ±20V
    15 ns
    60 ns
    40A
    3V
    20V
    100V
    100V
    3 V
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • STB300NH02L
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    STripFET™
    -
    Obsolete
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB300N
    3
    R-PSSO-G2
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    -
    -
    N-Channel
    SWITCHING
    1.8m Ω @ 80A, 10V
    2V @ 250μA
    7055pF @ 15V
    120A Tc
    109.4nC @ 10V
    275ns
    10V
    ±20V
    94.4 ns
    138 ns
    80A
    2V
    20V
    24V
    24V
    2 V
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    1.8MOhm
    unknown
    Not Qualified
    -
    -
    -
  • STB30NM50N
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    30
    STB30N
    4
    R-PSSO-G2
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    ISOLATED
    -
    N-Channel
    SWITCHING
    115m Ω @ 13.5A, 10V
    4V @ 250μA
    2740pF @ 50V
    27A Tc
    94nC @ 10V
    20ns
    10V
    ±25V
    60 ns
    115 ns
    27A
    -
    25V
    500V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    not_compliant
    Not Qualified
    900 mJ
    -
    -
  • STB3N62K3
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    SuperMESH3™
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    -
    STB3N
    4
    R-PSSO-G2
    1
    45W Tc
    Single
    ENHANCEMENT MODE
    45W
    -
    9 ns
    N-Channel
    SWITCHING
    2.5 Ω @ 1.4A, 10V
    4.5V @ 50μA
    385pF @ 25V
    2.7A Tc
    13nC @ 10V
    6.8ns
    10V
    ±30V
    15.6 ns
    22 ns
    2.7A
    3.75V
    30V
    620V
    -
    -
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    2.5Ohm
    -
    -
    100 mJ
    yes
    10.8A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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