STMicroelectronics STB21NM60N-1

STB21NM60N-1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 610 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 17A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 84 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 68A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB21NM60N-1 Features
the avalanche energy rating (Eas) is 610 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 84 ns
based on its rated peak drain current 68A.


STB21NM60N-1 Applications
There are a lot of STMicroelectronics
STB21NM60N-1 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools