STMicroelectronics STB19NF20

STB19NF20 Description

The STB19NF20 is a power MOSFET from STMicroelectronics with a maximum power dissipation of 90000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, The STB19NF20 MOSFET will be enclosed in tape and reel packaging during shipment. This The STB19NF20 N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


STB19NF20 Features

?Extremely high dv/dt capability
?Gate charge minimized
?Very low intrinsic capacitance
?Marking Code: 19NF20
?Type of Transistor: MOSFET
?Type of Control Channel: N -Channel
?Maximum Power Dissipation (Pd): 90 W
?Maximum Drain-Source Voltage |Vds|: 200 V
?Maximum Gate-Source Voltage |Vgs|: 20 V
?Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
?Maximum Drain Current |Id|: 15 A
?Maximum Junction Temperature (Tj): 150 °C
?Total Gate Charge (Qg): 24 nC
?Rise Time (tr): 22 nS
?Drain-Source Capacitance (Cd): 165 pF
?Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm


STB19NF20 Applications

?Switching applications
?Switch Mode Power Supplies (SMPS)
?Residential, commercial, architectural and street lighting.
?DC-DC converters
?Motor control
?Automotive applications