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STB14NK60ZT4

STMicroelectronics STB14NK60ZT4

Part Number:
STB14NK60ZT4
Manufacturer:
STMicroelectronics
Ventron No:
2482323-STB14NK60ZT4
Description:
MOSFET N-CH 600V 13.5A D2PAK
ECAD Model:
Datasheet:
STB14NK60ZT4

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Specifications
STMicroelectronics STB14NK60ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB14NK60ZT4.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    500mOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    13.5A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB14N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    26 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    500m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2220pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    75nC @ 10V
  • Rise Time
    18ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    62 ns
  • Continuous Drain Current (ID)
    13.5A
  • Threshold Voltage
    3.75V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    54A
  • Dual Supply Voltage
    600V
  • Nominal Vgs
    3.75 V
  • Height
    4.6mm
  • Length
    10.75mm
  • Width
    10.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB14NK60ZT4 Description

In D2PAK and TO-220FP packages, the STB14NK60ZT4 is an N-channel 600 V, 0.45 typ., 13.5 A SuperMESHTM Power MOSFET. It's an N-channel Zener-protected Power MOSFET designed with STMicroelectronics' SuperMESHTM technology, which was obtained by optimizing ST's well-known strip-based PowerMESHTM layout. According to the STB14NK60ZT4 datasheet, in addition to a significant reduction in on resistance, STB14NK60ZT4 is designed to ensure a high degree of dv/dt capability for the most demanding applications.


STB14NK60ZT4 Features


Zener-protected
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Extremely high dv/dt capability
Very good manufacturing repeatability



STB14NK60ZT4 Applications


Switching applications
STB14NK60ZT4 More Descriptions
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in D2PAK packageCiiva Crawler
Trans MOSFET N-CH 600V 13.5A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipati
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:300mJ; Capacitance Ciss Typ:2220pF; Current Iar:12A; Current Id Max:13.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; On State resistance @ Vgs = 10V:500mohm; Package / Case:D2-PAK; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:54A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:3V
Product Comparison
The three parts on the right have similar specifications to STB14NK60ZT4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Qualification Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Case Connection
    Drain to Source Voltage (Vdss)
    View Compare
  • STB14NK60ZT4
    STB14NK60ZT4
    STMicroelectronics
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    500mOhm
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    245
    13.5A
    30
    STB14N
    3
    R-PSSO-G2
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    26 ns
    N-Channel
    SWITCHING
    500m Ω @ 6A, 10V
    4.5V @ 100μA
    2220pF @ 25V
    13.5A Tc
    75nC @ 10V
    18ns
    10V
    ±30V
    13 ns
    62 ns
    13.5A
    3.75V
    30V
    600V
    54A
    600V
    3.75 V
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • STB12NM60N-1
    STB12NM60N-1
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    MATTE TIN
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    245
    -
    40
    STB12N
    3
    -
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    -
    N-Channel
    SWITCHING
    410m Ω @ 5A, 10V
    4V @ 250μA
    960pF @ 50V
    10A Tc
    30.5nC @ 10V
    9ns
    10V
    ±25V
    10 ns
    60 ns
    10A
    -
    25V
    600V
    40A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    not_compliant
    Not Qualified
    0.41Ohm
    200 mJ
    -
    -
    STB14NK60ZT4 vs STB12NM60N-1
  • STB130NS04ZBT4
    STB130NS04ZBT4
    STMicroelectronics
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    MESH OVERLAY™
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    80A
    30
    -
    3
    R-PSSO-G2
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    40 ns
    N-Channel
    SWITCHING
    9m Ω @ 40A, 10V
    4V @ 1mA
    2700pF @ 25V
    80A Tc
    80nC @ 10V
    10ns
    10V
    Clamped
    100 ns
    220 ns
    80A
    -
    18V
    33V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    0.009Ohm
    500 mJ
    DRAIN
    -
    STB14NK60ZT4 vs STB130NS04ZBT4
  • STB130N6F7
    STB130N6F7
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    22 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    STripFET™ F7
    -
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB130N
    -
    -
    -
    160W Tc
    -
    -
    -
    -
    N-Channel
    -
    5m Ω @ 40A, 10V
    4V @ 250μA
    2600pF @ 25V
    80A Tc
    42nC @ 10V
    -
    10V
    ±20V
    -
    -
    80A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    60V
    STB14NK60ZT4 vs STB130N6F7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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