STMicroelectronics STB13N60M2

Name: STB13N60M2
Brand: STMicroelectronics
SKU: 2482133-STB13N60M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB13N60M2

Manufacturer:: STMicroelectronics

Ventron No:: 2482133-STB13N60M2

Description:: MOSFET N-CH 600V 11A D2PAK

ECAD Model:

Datasheet:: STB13N60M2

Specifications

STMicroelectronics STB13N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB13N60M2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
380mOhm
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STB13N
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
580pF @ 100V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
9.5 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
650V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
125 mJ
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB13N60M2 Description
The MDmeshTM M2 technology was used to build the STB13N60M2 N-channel Power MOSFETs. These devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high-efficiency converters.

STB13N60M2 Features
? The gate charge is really low.
? Outstanding output capacitance profile (COSS)
? Avalanche-proofed to the nth degree
? Zener-secured

STB13N60M2 Applications
Switching applications

STB13N60M2 More Descriptions

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
Trans MOSFET N-CH 600V 11A 3-Pin(2 Tab) D2PAK T/R
MOSFET, N-CH, 600V, 11A, 110W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Product Comparison

The three parts on the right have similar specifications to STB13N60M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Technology

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Drain-source On Resistance-Max

Current Rating

View Compare
STB13N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

26 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™ II Plus

Active

1 (Unlimited)

2

EAR99

380mOhm

MOSFET (Metal Oxide)

GULL WING

STB13N

R-PSSO-G2

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

11 ns

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

4V @ 250μA

580pF @ 100V

11A Tc

17nC @ 10V

10ns

600V

10V

±25V

9.5 ns

41 ns

11A

25V

650V

44A

125 mJ

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
STB12NM60N-1

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

Obsolete

1 (Unlimited)

3

-

-

MOSFET (Metal Oxide)

-

STB12N

-

1

90W Tc

Single

ENHANCEMENT MODE

90W

-

-

N-Channel

SWITCHING

410m Ω @ 5A, 10V

4V @ 250μA

960pF @ 50V

10A Tc

30.5nC @ 10V

9ns

-

10V

±25V

10 ns

60 ns

10A

25V

600V

40A

200 mJ

-

-

-

-

ROHS3 Compliant

-

e3

MATTE TIN

FET General Purpose Power

245

not_compliant

40

3

Not Qualified

0.41Ohm

-

STB13N60M2 vs STB12NM60N-1
STB130NS04ZBT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

MESH OVERLAY™

Obsolete

1 (Unlimited)

2

EAR99

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

40 ns

N-Channel

SWITCHING

9m Ω @ 40A, 10V

4V @ 1mA

2700pF @ 25V

80A Tc

80nC @ 10V

10ns

-

10V

Clamped

100 ns

220 ns

80A

18V

33V

-

500 mJ

-

-

-

No

ROHS3 Compliant

Lead Free

e3

Matte Tin (Sn)

FET General Purpose Power

245

-

30

3

-

0.009Ohm

80A

STB13N60M2 vs STB130NS04ZBT4
STB141NF55-1

STMicroelectronics

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

Obsolete

1 (Unlimited)

3

EAR99

-6.5mOhm

MOSFET (Metal Oxide)

-

STB141N

R-PSIP-T3

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

-

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

5300pF @ 25V

80A Tc

142nC @ 10V

150ns

-

10V

±20V

45 ns

125 ns

80A

20V

55V

320A

1300 mJ

-

-

-

-

ROHS3 Compliant

-

e3

Tin (Sn)

FET General Purpose Power

NOT SPECIFIED

not_compliant

NOT SPECIFIED

3

Not Qualified

-

-

STB13N60M2 vs STB141NF55-1