STMicroelectronics STB12NK80ZT4

Name: STB12NK80ZT4
Brand: STMicroelectronics
SKU: 2849284-STB12NK80ZT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB12NK80ZT4

Manufacturer:: STMicroelectronics

Ventron No:: 2849284-STB12NK80ZT4

Description:: MOSFET N-CH 800V 10.5A D2PAK

ECAD Model:

Datasheet:: STB12NK80ZT4

Specifications

STMicroelectronics STB12NK80ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB12NK80ZT4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
750mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10.5A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB12N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
750m Ω @ 5.25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2620pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10.5A Tc
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
10.5A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
42A
Dual Supply Voltage
800V
Avalanche Energy Rating (Eas)
400 mJ
Nominal Vgs
3.75 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB12NK80ZT4 Features

Extremely high dv/dt capability
Improved esd capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing reliability
STB12NK80ZT4 Applications

Switching applications

STB12NK80ZT4 More Descriptions

N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package
MOSFET N-CH 800V 10.5A D2PAK / Trans MOSFET N-CH 800V 10.5A 3-Pin(2 Tab) D2PAK T/R
N-Channel 800 V 0.75 Ohm Surface Mount Zener Protect SuperMesh MosFet-D2PAK
Mosfet, N-Ch, 800V, 10.5A, To-263; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:10.5A; On Resistance Rds(On):0.65Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STB12NK80ZT4.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Case Connection

Drain-source On Resistance-Max

Drain to Source Voltage (Vdss)

View Compare
STB12NK80ZT4

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

750mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

800V

MOSFET (Metal Oxide)

GULL WING

245

10.5A

30

STB12N

3

R-PSSO-G2

1

190W Tc

Single

ENHANCEMENT MODE

190W

30 ns

N-Channel

SWITCHING

750m Ω @ 5.25A, 10V

4.5V @ 100μA

2620pF @ 25V

10.5A Tc

87nC @ 10V

18ns

10V

±30V

20 ns

70 ns

10.5A

3.75V

30V

800V

42A

800V

400 mJ

3.75 V

4.6mm

10.4mm

9.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-
STB130NS04ZBT4

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

245

80A

30

-

3

R-PSSO-G2

1

300W Tc

Single

ENHANCEMENT MODE

300W

40 ns

N-Channel

SWITCHING

9m Ω @ 40A, 10V

4V @ 1mA

2700pF @ 25V

80A Tc

80nC @ 10V

10ns

10V

Clamped

100 ns

220 ns

80A

-

18V

33V

-

-

500 mJ

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

DRAIN

0.009Ohm

-

STB12NK80ZT4 vs STB130NS04ZBT4
STB15NM60ND

STMicroelectronics

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

-

EAR99

299MOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

245

-

-

STB15N

4

R-PSSO-G2

1

125W Tc

Single

ENHANCEMENT MODE

125W

17 ns

N-Channel

SWITCHING

299m Ω @ 7A, 10V

5V @ 250μA

1250pF @ 50V

14A Tc

40nC @ 10V

20ns

10V

±25V

28 ns

47 ns

14A

4V

25V

600V

56A

-

-

4 V

4.6mm

10.75mm

10.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

STB12NK80ZT4 vs STB15NM60ND
STB130N6F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

22 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Cut Tape (CT)

STripFET™ F7

-

Active

1 (Unlimited)

-

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

STB130N

-

-

-

160W Tc

-

-

-

-

N-Channel

-

5m Ω @ 40A, 10V

4V @ 250μA

2600pF @ 25V

80A Tc

42nC @ 10V

-

10V

±20V

-

-

80A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

60V

STB12NK80ZT4 vs STB130N6F7