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STB120N4F6

STMicroelectronics STB120N4F6

Part Number:
STB120N4F6
Manufacturer:
STMicroelectronics
Ventron No:
2484833-STB120N4F6
Description:
MOSFET N-CH 40V 80A D2PAK
ECAD Model:
Datasheet:
STB120N4F6

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Specifications
STMicroelectronics STB120N4F6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB120N4F6.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    4MOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Base Part Number
    STB120N
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3850pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • Rise Time
    70ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    80A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Height
    4.6mm
  • Length
    10.4mm
  • Width
    9.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The STB120N4F6 is an Automotive-grade N-channel 40 V, 3.5 m? typ., 80 A STripFET? F6 Power MOSFETs in DPAK and D2PAK packages. These products are N-channel Power MOSFETs made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFETs that are produced have the lowest RDS(on) among all packages. The STB120N4F6 product uses the latest gate structure and ST's patented STripFET? DeepGATE? technology's 6th generation of design rules. The Power MOSFET that results has the lowest RDS(on) among all packages.

Features
High avalanche ruggedness
Low gate drive power loss
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance
Very low gate charge

Applications
Switching applications
Automotive
Small motor control
Solar inverters
Automotive applications
STB120N4F6 More Descriptions
N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Product Comparison
The three parts on the right have similar specifications to STB120N4F6.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Reach Compliance Code
    Qualification Status
    Pulsed Drain Current-Max (IDM)
    Drain to Source Voltage (Vdss)
    View Compare
  • STB120N4F6
    STB120N4F6
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    20 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    4MOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    245
    STB120N
    4
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    4m Ω @ 40A, 10V
    4V @ 250μA
    3850pF @ 25V
    80A Tc
    65nC @ 10V
    70ns
    10V
    ±20V
    20 ns
    40 ns
    80A
    20V
    40V
    4.6mm
    10.4mm
    9.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STB130NS04ZBT4
    STB130NS04ZBT4
    STMicroelectronics
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    MESH OVERLAY™
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    3
    R-PSSO-G2
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    40 ns
    N-Channel
    SWITCHING
    9m Ω @ 40A, 10V
    4V @ 1mA
    2700pF @ 25V
    80A Tc
    80nC @ 10V
    10ns
    10V
    Clamped
    100 ns
    220 ns
    80A
    18V
    33V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    80A
    30
    0.009Ohm
    500 mJ
    -
    -
    -
    -
    STB120N4F6 vs STB130NS04ZBT4
  • STB141NF55-1
    STB141NF55-1
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -6.5mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    STB141N
    3
    R-PSIP-T3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    -
    N-Channel
    SWITCHING
    8m Ω @ 40A, 10V
    4V @ 250μA
    5300pF @ 25V
    80A Tc
    142nC @ 10V
    150ns
    10V
    ±20V
    45 ns
    125 ns
    80A
    20V
    55V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    NOT SPECIFIED
    -
    1300 mJ
    not_compliant
    Not Qualified
    320A
    -
    STB120N4F6 vs STB141NF55-1
  • STB130N6F7
    STB130N6F7
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    22 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Cut Tape (CT)
    STripFET™ F7
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    STB130N
    -
    -
    -
    160W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    5m Ω @ 40A, 10V
    4V @ 250μA
    2600pF @ 25V
    80A Tc
    42nC @ 10V
    -
    10V
    ±20V
    -
    -
    80A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    NOT SPECIFIED
    -
    -
    -
    -
    -
    60V
    STB120N4F6 vs STB130N6F7
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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