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STB11NM60T4

STMicroelectronics STB11NM60T4

Part Number:
STB11NM60T4
Manufacturer:
STMicroelectronics
Ventron No:
2849867-STB11NM60T4
Description:
MOSFET N-CH 650V 11A D2PAK
ECAD Model:
Datasheet:
STB11NM60T4

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Specifications
STMicroelectronics STB11NM60T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB11NM60T4.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    MDmesh™
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    450MOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Current Rating
    11A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STB11N
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    450m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    20ns
  • Drain to Source Voltage (Vdss)
    650V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    44A
  • Height
    4.6mm
  • Length
    10.75mm
  • Width
    10.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STB11NM60T4 Description
The STB11NM60T4 is N-channel Power MOSFET developed using the second generation of MDmesh? technology.

STB11NM60T4 Features
100% avalanche tested

Low input capacitance and gate charge
Low gate input resistance

STB11NM60T4 Applications
Switching applications

STB11NM60T4 More Descriptions
N-channel 600 V, 0.4 Ohm, 11 A, I2PAK, D2PAK MDmesh(TM) Power MOSFET
N-Channel 600 V 450 mOhm 160 W Surface Mount MDmesh™ Power Mosfet - D2PAK
Trans MOSFET N-CH 600V 11A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 11A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Product Comparison
The three parts on the right have similar specifications to STB11NM60T4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Reach Compliance Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    View Compare
  • STB11NM60T4
    STB11NM60T4
    STMicroelectronics
    NRND (Last Updated: 7 months ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    MDmesh™
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    450MOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    GULL WING
    245
    11A
    30
    STB11N
    3
    R-PSSO-G2
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    1000pF @ 25V
    11A Tc
    30nC @ 10V
    20ns
    650V
    10V
    ±30V
    11 ns
    6 ns
    11A
    4V
    30V
    600V
    44A
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STB16NK65Z-S
    STB16NK65Z-S
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    380mOhm
    Tin (Sn)
    FET General Purpose Power
    650V
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    13A
    NOT SPECIFIED
    STB16N
    3
    R-PSIP-T3
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    -
    N-Channel
    SWITCHING
    500m Ω @ 6.5A, 10V
    4.5V @ 100μA
    2750pF @ 25V
    13A Tc
    89nC @ 10V
    25ns
    -
    10V
    ±30V
    17 ns
    68 ns
    13A
    -
    30V
    650V
    52A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    AVALANCHE RATED
    not_compliant
    Not Qualified
    350 mJ
    -
    STB11NM60T4 vs STB16NK65Z-S
  • STB13NM50N-1
    STB13NM50N-1
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    150°C TJ
    Tube
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STB13N
    3
    -
    1
    100W Tc
    Single
    ENHANCEMENT MODE
    100W
    -
    N-Channel
    SWITCHING
    320m Ω @ 6A, 10V
    4V @ 250μA
    960pF @ 50V
    12A Tc
    30nC @ 10V
    15ns
    -
    10V
    ±25V
    10 ns
    40 ns
    12A
    -
    25V
    500V
    48A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    Not Qualified
    200 mJ
    -
    STB11NM60T4 vs STB13NM50N-1
  • STB15NM60ND
    STB15NM60ND
    STMicroelectronics
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    FDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    299MOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    245
    -
    -
    STB15N
    4
    R-PSSO-G2
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    17 ns
    N-Channel
    SWITCHING
    299m Ω @ 7A, 10V
    5V @ 250μA
    1250pF @ 50V
    14A Tc
    40nC @ 10V
    20ns
    -
    10V
    ±25V
    28 ns
    47 ns
    14A
    4V
    25V
    600V
    56A
    4.6mm
    10.75mm
    10.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    4 V
    STB11NM60T4 vs STB15NM60ND
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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