STMicroelectronics STB11NM60-1

STB11NM60-1 Overview
A device's maximal input capacitance is 1000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 44A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STB11NM60-1 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 44A.
a 650V drain to source voltage (Vdss)


STB11NM60-1 Applications
There are a lot of STMicroelectronics
STB11NM60-1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples