STMicroelectronics STB11NK50ZT4

Name: STB11NK50ZT4
Brand: STMicroelectronics
SKU: 2483982-STB11NK50ZT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STB11NK50ZT4

Manufacturer:: STMicroelectronics

Ventron No:: 2483982-STB11NK50ZT4

Description:: MOSFET N-CH 500V 10A D2PAK

ECAD Model:

Datasheet:: STB11NK50ZT4

Specifications

STMicroelectronics STB11NK50ZT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB11NK50ZT4.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
520mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STB11N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Turn On Delay Time
14.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
40A
Dual Supply Voltage
500V
Nominal Vgs
3.75 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STB11NK50ZT4 Description
STB11NK50ZT4 is an N-channel Zener-protected SuperMESH? power MOSFET provided by STMicroelectronics based on the well-established PowerMESH? technology and strip-based PowerMESH? layout. It is able to minimize on-state resistance and gate charge while ensuring a very good dv/dt capability for the most demanding applications.

STB11NK50ZT4 Features
Extremely high dv/dt capability
100% avalanche tested
Low gate charge
Low on-state resistance
Available in the D2PAK package

STB11NK50ZT4 Applications
Switching applications

STB11NK50ZT4 More Descriptions

N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
N-Channel 500 Vds 10 A 520 mOhm 125 W Zener Protected Mosfet - D2Pak
Trans MOSFET N-CH 500V 10A 3-Pin(2 Tab) D2PAK T/R
Mosfet, N Channel, 500V, 10A, D2Pak; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STB11NK50ZT4

Product Comparison

The three parts on the right have similar specifications to STB11NK50ZT4.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Qualification Status

Avalanche Energy Rating (Eas)

Height

Length

Width

Lifecycle Status

Drain to Source Voltage (Vdss)

View Compare
STB11NK50ZT4

STMicroelectronics

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SuperMESH™

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

520mOhm

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

500V

MOSFET (Metal Oxide)

GULL WING

245

10A

30

STB11N

3

R-PSSO-G2

1

125W Tc

Single

ENHANCEMENT MODE

125W

14.5 ns

N-Channel

SWITCHING

520m Ω @ 4.5A, 10V

4.5V @ 100μA

1390pF @ 25V

10A Tc

68nC @ 10V

18ns

10V

±30V

15 ns

41 ns

4.5A

3.75V

30V

500V

40A

500V

3.75 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STB16NK65Z-S

STMicroelectronics

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

-

-

380mOhm

Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

650V

MOSFET (Metal Oxide)

-

NOT SPECIFIED

13A

NOT SPECIFIED

STB16N

3

R-PSIP-T3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

500m Ω @ 6.5A, 10V

4.5V @ 100μA

2750pF @ 25V

13A Tc

89nC @ 10V

25ns

10V

±30V

17 ns

68 ns

13A

-

30V

650V

52A

-

-

-

-

ROHS3 Compliant

Lead Free

not_compliant

Not Qualified

350 mJ

-

-

-

-

-

STB11NK50ZT4 vs STB16NK65Z-S
STB15NM60ND

STMicroelectronics

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

FDmesh™ II

e3

Obsolete

1 (Unlimited)

2

-

EAR99

299MOhm

Matte Tin (Sn) - annealed

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

245

-

-

STB15N

4

R-PSSO-G2

1

125W Tc

Single

ENHANCEMENT MODE

125W

17 ns

N-Channel

SWITCHING

299m Ω @ 7A, 10V

5V @ 250μA

1250pF @ 50V

14A Tc

40nC @ 10V

20ns

10V

±25V

28 ns

47 ns

14A

4V

25V

600V

56A

-

4 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

4.6mm

10.75mm

10.4mm

-

-

STB11NK50ZT4 vs STB15NM60ND
STB130N6F7

STMicroelectronics

22 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Cut Tape (CT)

STripFET™ F7

-

Active

1 (Unlimited)

-

-

EAR99

-

-

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

STB130N

-

-

-

160W Tc

-

-

-

-

N-Channel

-

5m Ω @ 40A, 10V

4V @ 250μA

2600pF @ 25V

80A Tc

42nC @ 10V

-

10V

±20V

-

-

80A

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

60V

STB11NK50ZT4 vs STB130N6F7