Fairchild/ON Semiconductor SSH22N50A
- Part Number:
- SSH22N50A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2491878-SSH22N50A
- Description:
- MOSFET N-CH 500V 22A TO-3P
- Datasheet:
- SSH22N50A
Fairchild/ON Semiconductor SSH22N50A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SSH22N50A.
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Supplier Device PackageTO-3P
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max278W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs250mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5120pF @ 25V
- Current - Continuous Drain (Id) @ 25°C22A Tc
- Gate Charge (Qg) (Max) @ Vgs236nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
Description
The SSH22N50A is an Advanced Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world because of its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, easy biasing, simplicity of application, and ease of repair.
Features
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10|ìA (Max.) @ VDS = 500V
Lower RDS(ON): 0.197? (Typ.)
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Applications
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
Switch Mode Power Supplies (SMPS)
The SSH22N50A is an Advanced Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world because of its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, easy biasing, simplicity of application, and ease of repair.
Features
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10|ìA (Max.) @ VDS = 500V
Lower RDS(ON): 0.197? (Typ.)
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Applications
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
Switch Mode Power Supplies (SMPS)
SSH22N50A More Descriptions
Trans MOSFET N-CH 500V 22A 3-Pin (3 Tab) TO-3P Rail
RAIL N-CH/500V/22A/0.25OHM/Substitute of SSH20N50
Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RAIL N-CH/500V/22A/0.25OHM/Substitute of SSH20N50
Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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