SSH22N50A

Fairchild/ON Semiconductor SSH22N50A

Part Number:
SSH22N50A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2491878-SSH22N50A
Description:
MOSFET N-CH 500V 22A TO-3P
ECAD Model:
Datasheet:
SSH22N50A

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Specifications
Fairchild/ON Semiconductor SSH22N50A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SSH22N50A.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    278W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    250mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5120pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    236nC @ 10V
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
Description
Description
The SSH22N50A is an Advanced Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world because of its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, easy biasing, simplicity of application, and ease of repair.

Features
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10|ìA (Max.) @ VDS = 500V
Lower RDS(ON): 0.197? (Typ.)
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance

Applications
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control
Switch Mode Power Supplies (SMPS)
SSH22N50A More Descriptions
Trans MOSFET N-CH 500V 22A 3-Pin (3 Tab) TO-3P Rail
RAIL N-CH/500V/22A/0.25OHM/Substitute of SSH20N50
Power Field-Effect Transistor, 22A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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