Vishay Siliconix SQM120P06-07L_GE3

Name: SQM120P06-07L_GE3
Brand: Vishay Siliconix
SKU: 2849226-SQM120P06-07L_GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SQM120P06-07L_GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2849226-SQM120P06-07L_GE3

Description:: MOSFET P-CH 60V 120A TO263

ECAD Model:

Datasheet:: SQM120P06-07L_GE3

Specifications

Vishay Siliconix SQM120P06-07L_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQM120P06-07L_GE3.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Supplier Device Package
TO-263 (D2Pak)
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
375W Tc
Power Dissipation
375W
Turn On Delay Time
15 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
14280pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
97 ns
Continuous Drain Current (ID)
-120A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Max Junction Temperature (Tj)
175°C
Drain to Source Resistance
5.6mOhm
Height
5.08mm
RoHS Status
ROHS3 Compliant

Description

SQM120P06-07L_GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 97 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 5.6mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SQM120P06-07L_GE3 Features
a continuous drain current (ID) of -120A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 97 ns
single MOSFETs transistor is 5.6mOhm
a 60V drain to source voltage (Vdss)

SQM120P06-07L_GE3 Applications
There are a lot of Vishay Siliconix
SQM120P06-07L_GE3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

SQM120P06-07L_GE3 More Descriptions

P-Channel 60 V 120 A 6.7 mO Surface Mount Automotive Mosfet - D2PAK
P-Channel 60-V (D-S) 175C Mosfet Rohs Compliant: Yes |Vishay SQM120P06-07L_GE3
Trans MOSFET P-CH 60V 120A Automotive 3-Pin(2 Tab) D2PAK
MOSFET, AEC-Q101, P-CH, -60V, -120A; Transistor Polarity:P Channel; Continuous Drain Current Id:-120A; Source Voltage Vds:-60V; On Resistance
MOSFET, AEC-Q101, P-CH, -60V, -120A; Transistor Polarity: P Channel; Continuous Drain Current Id: -120A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to SQM120P06-07L_GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Channels

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Drain to Source Resistance

Height

RoHS Status

Mount

Number of Pins

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Rise Time

Fall Time (Typ)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Radiation Hardening

Weight

Element Configuration

Threshold Voltage

Input Capacitance

Rds On Max

Nominal Vgs

Length

Width

REACH SVHC

Avalanche Energy Rating (Eas)

View Compare
SQM120P06-07L_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

TO-263 (D2Pak)

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2015

Active

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

375W Tc

375W

15 ns

P-Channel

6.7mOhm @ 30A, 10V

2.5V @ 250μA

14280pF @ 25V

120A Tc

270nC @ 10V

60V

4.5V 10V

±20V

97 ns

-120A

20V

-60V

175°C

5.6mOhm

5.08mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SQM110P04-04L-GE3

Vishay Siliconix

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2013

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

375W Tc

375W

17 ns

P-Channel

4m Ω @ 30A, 10V

2.5V @ 250μA

13980pF @ 20V

120A Tc

330nC @ 10V

40V

4.5V 10V

±20V

112 ns

120A

20V

-

-

-

-

ROHS3 Compliant

Surface Mount

3

SILICON

yes

2

EAR99

Other Transistors

SINGLE

GULL WING

260

40

4

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

15ns

45 ns

240A

40V

No

-

-

-

-

-

-

-

-

-

-

SQM120P06-07L_GE3 vs SQM110P04-04L-GE3
SQM110N05-06L_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

TO-263 (D2Pak)

-55°C~175°C TJ

Tape & Reel (TR)

TrenchFET®

2014

Active

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

1

157W Tc

157W

15 ns

N-Channel

6mOhm @ 30A, 10V

2.5V @ 250μA

4440pF @ 25V

110A Tc

110nC @ 10V

55V

4.5V 10V

±20V

35 ns

110A

20V

55V

-

6mOhm

4.83mm

ROHS3 Compliant

Surface Mount

3

-

-

-

-

-

-

-

-

-

-

-

1

-

-

15ns

15 ns

-

-

No

1.437803g

Single

2V

4.44nF

6 mΩ

2 V

10.41mm

9.65mm

Unknown

-

SQM120P06-07L_GE3 vs SQM110N05-06L_GE3
SQM120N06-3M5L_GE3

Vishay Siliconix

12 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchFET®

2014

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

375W Tc

-

19 ns

N-Channel

3.5m Ω @ 29A, 10V

2.5V @ 250μA

14700pF @ 25V

120A Tc

330nC @ 10V

60V

4.5V 10V

±20V

83 ns

120A

20V

-

-

-

4.826mm

ROHS3 Compliant

Surface Mount

3

SILICON

-

2

EAR99

-

-

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

R-PSSO-G2

1

-

ENHANCEMENT MODE

23ns

35 ns

480A

60V

-

-

Single

2V

-

-

-

10.41mm

9.652mm

Unknown

500 mJ

SQM120P06-07L_GE3 vs SQM120N06-3M5L_GE3