SQJ456EP-T1_GE3

Vishay Siliconix SQJ456EP-T1_GE3

Part Number:
SQJ456EP-T1_GE3
Manufacturer:
Vishay Siliconix
Ventron No:
4538964-SQJ456EP-T1_GE3
Description:
MOSFET N-CH 100V 32A PPAK SO-8
ECAD Model:
Datasheet:
SQJ456EP-T1_GE3

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Specifications
Vishay Siliconix SQJ456EP-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQJ456EP-T1_GE3.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Supplier Device Package
    PowerPAK® SO-8
  • Weight
    506.605978mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Published
    2017
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    83W Tc
  • Element Configuration
    Single
  • Power Dissipation
    83W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    26mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3342pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    32A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    32A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    3.342nF
  • Drain to Source Resistance
    26mOhm
  • Rds On Max
    26 mΩ
  • Nominal Vgs
    3 V
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SQJ456EP-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3342pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 26mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

SQJ456EP-T1_GE3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 26mOhm
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)


SQJ456EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ456EP-T1_GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SQJ456EP-T1_GE3 More Descriptions
Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4 Tab) PowerPAK SO EP T/R
Mosfet, N Channel, 100V, 32A, Ppak So8
MOSFET,N CH,W DIODE,100V,32A,PPAK8L
N-CHANNEL 100-V (D-S) 175C MOSFET
N-CH 100V 32A 26mOhm PPSO-8L RoHSconf
MOSFET 100V 32A 83W AEC-Q101 Qualified
French Electronic Distributor since 1988
MOSFET,N CH,W DIODE,100V,32A,PPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V
Product Comparison
The three parts on the right have similar specifications to SQJ456EP-T1_GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Operating Mode
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Lead Free
    JESD-609 Code
    Terminal Finish
    Max Junction Temperature (Tj)
    Height
    View Compare
  • SQJ456EP-T1_GE3
    SQJ456EP-T1_GE3
    12 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    PowerPAK® SO-8
    506.605978mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    2017
    Active
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    83W Tc
    Single
    83W
    14 ns
    N-Channel
    26mOhm @ 9.3A, 10V
    3.5V @ 250μA
    3342pF @ 25V
    32A Tc
    63nC @ 10V
    12ns
    100V
    6V 10V
    ±20V
    8 ns
    35 ns
    32A
    3V
    20V
    100V
    3.342nF
    26mOhm
    26 mΩ
    3 V
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SQJ418EP-T1_GE3
    12 Weeks
    -
    Surface Mount
    PowerPAK® SO-8
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    68W Tc
    -
    -
    -
    N-Channel
    14m Ω @ 10A, 10V
    3.5V @ 250μA
    1700pF @ 25V
    48A Tc
    35nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSSO-G4
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    48A
    0.014Ohm
    160A
    100V
    65 mJ
    -
    -
    -
    -
    -
  • SQJ474EP-T1_GE3
    12 Weeks
    -
    Surface Mount
    PowerPAK® SO-8
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    45W Tc
    -
    -
    -
    N-Channel
    30m Ω @ 10A, 10V
    2.5V @ 250μA
    1100pF @ 25V
    26A Tc
    30nC @ 10V
    -
    100V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSSO-G4
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    26A
    0.03Ohm
    65A
    100V
    24 mJ
    Lead Free
    -
    -
    -
    -
  • SQJ479EP-T1_GE3
    12 Weeks
    -
    Surface Mount
    PowerPAK® SO-8
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchFET®
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    68W Tc
    -
    68W
    15 ns
    P-Channel
    33m Ω @ 10A, 10V
    2.5V @ 250μA
    4500pF @ 25V
    32A Tc
    150nC @ 10V
    -
    80V
    4.5V 10V
    ±20V
    -
    50 ns
    -32A
    -
    20V
    -80V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSSO-G4
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    -
    0.033Ohm
    -
    -
    80 mJ
    -
    e3
    Matte Tin (Sn)
    175°C
    1.267mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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