Vishay Siliconix SQJ456EP-T1_GE3
- Part Number:
- SQJ456EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 4538964-SQJ456EP-T1_GE3
- Description:
- MOSFET N-CH 100V 32A PPAK SO-8
- Datasheet:
- SQJ456EP-T1_GE3
Vishay Siliconix SQJ456EP-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SQJ456EP-T1_GE3.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Supplier Device PackagePowerPAK® SO-8
- Weight506.605978mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchFET®
- Published2017
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max83W Tc
- Element ConfigurationSingle
- Power Dissipation83W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3342pF @ 25V
- Current - Continuous Drain (Id) @ 25°C32A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time12ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)32A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance3.342nF
- Drain to Source Resistance26mOhm
- Rds On Max26 mΩ
- Nominal Vgs3 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SQJ456EP-T1_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3342pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 26mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SQJ456EP-T1_GE3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 26mOhm
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)
SQJ456EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ456EP-T1_GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3342pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 26mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SQJ456EP-T1_GE3 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 26mOhm
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)
SQJ456EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ456EP-T1_GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SQJ456EP-T1_GE3 More Descriptions
Trans MOSFET N-CH 100V 32A Automotive 5-Pin(4 Tab) PowerPAK SO EP T/R
Mosfet, N Channel, 100V, 32A, Ppak So8
MOSFET,N CH,W DIODE,100V,32A,PPAK8L
N-CHANNEL 100-V (D-S) 175C MOSFET
N-CH 100V 32A 26mOhm PPSO-8L RoHSconf
MOSFET 100V 32A 83W AEC-Q101 Qualified
French Electronic Distributor since 1988
MOSFET,N CH,W DIODE,100V,32A,PPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V
Mosfet, N Channel, 100V, 32A, Ppak So8
MOSFET,N CH,W DIODE,100V,32A,PPAK8L
N-CHANNEL 100-V (D-S) 175C MOSFET
N-CH 100V 32A 26mOhm PPSO-8L RoHSconf
MOSFET 100V 32A 83W AEC-Q101 Qualified
French Electronic Distributor since 1988
MOSFET,N CH,W DIODE,100V,32A,PPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to SQJ456EP-T1_GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lead FreeJESD-609 CodeTerminal FinishMax Junction Temperature (Tj)HeightView Compare
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SQJ456EP-T1_GE312 WeeksSurface MountSurface MountPowerPAK® SO-88PowerPAK® SO-8506.605978mg-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®2017Active1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1183W TcSingle83W14 nsN-Channel26mOhm @ 9.3A, 10V3.5V @ 250μA3342pF @ 25V32A Tc63nC @ 10V12ns100V6V 10V±20V8 ns35 ns32A3V20V100V3.342nF26mOhm26 mΩ3 VUnknownNoROHS3 Compliant------------------------
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12 Weeks-Surface MountPowerPAK® SO-8----55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®-Active1 (Unlimited)--MOSFET (Metal Oxide)1-68W Tc---N-Channel14m Ω @ 10A, 10V3.5V @ 250μA1700pF @ 25V48A Tc35nC @ 10V-100V10V±20V------------ROHS3 CompliantYESSILICON4EAR99SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDR-PSSO-G4SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN48A0.014Ohm160A100V65 mJ-----
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12 Weeks-Surface MountPowerPAK® SO-8----55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®-Active1 (Unlimited)--MOSFET (Metal Oxide)1-45W Tc---N-Channel30m Ω @ 10A, 10V2.5V @ 250μA1100pF @ 25V26A Tc30nC @ 10V-100V4.5V 10V±20V------------ROHS3 CompliantYESSILICON4EAR99SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDR-PSSO-G4SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN26A0.03Ohm65A100V24 mJLead Free----
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12 Weeks-Surface MountPowerPAK® SO-8----55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®-Active1 (Unlimited)--MOSFET (Metal Oxide)1168W Tc-68W15 nsP-Channel33m Ω @ 10A, 10V2.5V @ 250μA4500pF @ 25V32A Tc150nC @ 10V-80V4.5V 10V±20V-50 ns-32A-20V-80V------ROHS3 CompliantYESSILICON4EAR99SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDR-PSSO-G4SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN-0.033Ohm--80 mJ-e3Matte Tin (Sn)175°C1.267mm
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