SPP20N60S5

Infineon Technologies SPP20N60S5

Part Number:
SPP20N60S5
Manufacturer:
Infineon Technologies
Ventron No:
2492058-SPP20N60S5
Description:
MOSFET N-CH 650V 20A TO-220AB
ECAD Model:
Datasheet:
SPP20N60S5

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Specifications
Infineon Technologies SPP20N60S5 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPP20N60S5.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2005
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    650V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    20A
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    208W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    208W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    120 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    190m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    5.5V @ 1mA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    103nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4.5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    600V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    40A
  • Dual Supply Voltage
    600V
  • Avalanche Energy Rating (Eas)
    690 mJ
  • Nominal Vgs
    4.5 V
  • Height
    4.4mm
  • Length
    8.64mm
  • Width
    10.26mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Contains Lead
Description
SPP20N60S5 Description
The Infineon Technologies SPP20N60S5 transistor is CoolMOS? CP, Infineon's fifth series of CoolMOS?, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

SPP20N60S5 Features
New revolutionary high-voltage technology
Worldwide best RDS(on) in TO-220
Ultra-low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra-low effective capacitances
Improved transconductance

SPP20N60S5 Applications
DCM PFC for Lamp Ballast
PWM for Lamp Ballast & PDP and LCD TV
Hard and soft-switching SMPS topologies
SPP20N60S5 More Descriptions
MOSFET N-Channel 6000V 20A TO220
Product Comparison
The three parts on the right have similar specifications to SPP20N60S5.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SPP20N60S5
    SPP20N60S5
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2005
    yes
    Obsolete
    1 (Unlimited)
    3
    Through Hole
    AVALANCHE RATED
    FET General Purpose Power
    650V
    MOSFET (Metal Oxide)
    20A
    3
    1
    208W Tc
    Single
    ENHANCEMENT MODE
    208W
    DRAIN
    120 ns
    N-Channel
    SWITCHING
    190m Ω @ 13A, 10V
    5.5V @ 1mA
    Halogen Free
    3000pF @ 25V
    20A Tc
    103nC @ 10V
    25ns
    10V
    ±20V
    30 ns
    140 ns
    20A
    4.5V
    TO-220AB
    20V
    600V
    600V
    40A
    600V
    690 mJ
    4.5 V
    4.4mm
    8.64mm
    10.26mm
    No SVHC
    No
    RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SPP20N60C3HKSA1
    -
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2005
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    208W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    190m Ω @ 13.1A, 10V
    3.9V @ 1mA
    -
    2400pF @ 25V
    20.7A Tc
    114nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-220AB
    -
    -
    -
    62.1A
    -
    690 mJ
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    NO
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    600V
    20.7A
    0.19Ohm
    600V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SPP20N65C3XKSA1
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2005
    yes
    Not For New Designs
    1 (Unlimited)
    3
    -
    AVALANCHE RATED
    -
    650V
    MOSFET (Metal Oxide)
    20.7A
    3
    1
    208W Tc
    Single
    ENHANCEMENT MODE
    208W
    -
    -
    N-Channel
    SWITCHING
    190m Ω @ 13.1A, 10V
    3.9V @ 1mA
    Halogen Free
    2400pF @ 25V
    20.7A Tc
    114nC @ 10V
    5ns
    10V
    ±20V
    4.5 ns
    67 ns
    20.7A
    -
    TO-220AB
    20V
    650V
    650V
    -
    -
    690 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    e3
    EAR99
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    -
  • SPP24N60C3XKSA1
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2005
    -
    Not For New Designs
    1 (Unlimited)
    -
    -
    -
    -
    650V
    MOSFET (Metal Oxide)
    24.3A
    -
    1
    240W Tc
    -
    -
    240W
    -
    13 ns
    N-Channel
    -
    160mOhm @ 15.4A, 10V
    3.9V @ 1.2mA
    Halogen Free
    3000pF @ 25V
    24.3A Tc
    135nC @ 10V
    21ns
    10V
    ±20V
    14 ns
    140 ns
    24.3A
    -
    -
    20V
    600V
    650V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    650V
    -
    -
    -
    -
    -
    -
    TO-220-3
    150°C
    -55°C
    3nF
    140mOhm
    160 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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