Infineon Technologies SPP20N60S5
- Part Number:
- SPP20N60S5
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492058-SPP20N60S5
- Description:
- MOSFET N-CH 650V 20A TO-220AB
- Datasheet:
- SPP20N60S5
Infineon Technologies SPP20N60S5 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPP20N60S5.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2005
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC650V
- TechnologyMOSFET (Metal Oxide)
- Current Rating20A
- Pin Count3
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Case ConnectionDRAIN
- Turn On Delay Time120 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs190m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id5.5V @ 1mA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs103nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage4.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)40A
- Dual Supply Voltage600V
- Avalanche Energy Rating (Eas)690 mJ
- Nominal Vgs4.5 V
- Height4.4mm
- Length8.64mm
- Width10.26mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
SPP20N60S5 Description
The Infineon Technologies SPP20N60S5 transistor is CoolMOS? CP, Infineon's fifth series of CoolMOS?, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
SPP20N60S5 Features
New revolutionary high-voltage technology
Worldwide best RDS(on) in TO-220
Ultra-low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra-low effective capacitances
Improved transconductance
SPP20N60S5 Applications
DCM PFC for Lamp Ballast
PWM for Lamp Ballast & PDP and LCD TV
Hard and soft-switching SMPS topologies
The Infineon Technologies SPP20N60S5 transistor is CoolMOS? CP, Infineon's fifth series of CoolMOS?, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
SPP20N60S5 Features
New revolutionary high-voltage technology
Worldwide best RDS(on) in TO-220
Ultra-low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra-low effective capacitances
Improved transconductance
SPP20N60S5 Applications
DCM PFC for Lamp Ballast
PWM for Lamp Ballast & PDP and LCD TV
Hard and soft-switching SMPS topologies
SPP20N60S5 More Descriptions
MOSFET N-Channel 6000V 20A TO220
The three parts on the right have similar specifications to SPP20N60S5.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinJESD-609 CodeECCN CodeTerminal FinishSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SPP20N60S58 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeCoolMOS™2005yesObsolete1 (Unlimited)3Through HoleAVALANCHE RATEDFET General Purpose Power650VMOSFET (Metal Oxide)20A31208W TcSingleENHANCEMENT MODE208WDRAIN120 nsN-ChannelSWITCHING190m Ω @ 13A, 10V5.5V @ 1mAHalogen Free3000pF @ 25V20A Tc103nC @ 10V25ns10V±20V30 ns140 ns20A4.5VTO-220AB20V600V600V40A600V690 mJ4.5 V4.4mm8.64mm10.26mmNo SVHCNoRoHS CompliantContains Lead----------------------
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---Through HoleTO-220-3-SILICON-55°C~150°C TJTubeCoolMOS™2005yesObsolete1 (Unlimited)3-AVALANCHE RATED--MOSFET (Metal Oxide)-31208W Tc-ENHANCEMENT MODE---N-ChannelSWITCHING190m Ω @ 13.1A, 10V3.9V @ 1mA-2400pF @ 25V20.7A Tc114nC @ 10V-10V±20V----TO-220AB---62.1A-690 mJ------RoHS Compliant-NOSINGLENOT SPECIFIEDcompliantNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE600V20.7A0.19Ohm600V---------
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8 Weeks-Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeCoolMOS™2005yesNot For New Designs1 (Unlimited)3-AVALANCHE RATED-650VMOSFET (Metal Oxide)20.7A31208W TcSingleENHANCEMENT MODE208W--N-ChannelSWITCHING190m Ω @ 13.1A, 10V3.9V @ 1mAHalogen Free2400pF @ 25V20.7A Tc114nC @ 10V5ns10V±20V4.5 ns67 ns20.7A-TO-220AB20V650V650V--690 mJ------ROHS3 CompliantLead Free--NOT SPECIFIED-NOT SPECIFIED-------e3EAR99Matte Tin (Sn)------
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8 Weeks-Through HoleThrough HoleTO-220-33--55°C~150°C TJTubeCoolMOS™2005-Not For New Designs1 (Unlimited)----650VMOSFET (Metal Oxide)24.3A-1240W Tc--240W-13 nsN-Channel-160mOhm @ 15.4A, 10V3.9V @ 1.2mAHalogen Free3000pF @ 25V24.3A Tc135nC @ 10V21ns10V±20V14 ns140 ns24.3A--20V600V650V---------ROHS3 CompliantLead Free--------650V------TO-220-3150°C-55°C3nF140mOhm160 mΩ
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