Infineon Technologies SPD30N08S2L-21

Name: SPD30N08S2L-21
Brand: Infineon Technologies
SKU: 3813783-SPD30N08S2L-21
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SPD30N08S2L-21

Manufacturer:: Infineon Technologies

Ventron No:: 3813783-SPD30N08S2L-21

Description:: MOSFET N-CH 75V 30A DPAK

ECAD Model:

Datasheet:: SPD30N08S2L-21

Specifications

Infineon Technologies SPD30N08S2L-21 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPD30N08S2L-21.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2003
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
75V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Current Rating
30A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
136W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds
2130pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
30A
Drain-source On Resistance-Max
0.026Ohm
Pulsed Drain Current-Max (IDM)
120A
Avalanche Energy Rating (Eas)
240 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

SPD30N08S2L-21 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 240 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2130pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.Peak drain current for this device is 120A, which is its maximum pulsed drain current.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SPD30N08S2L-21 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 120A.

SPD30N08S2L-21 Applications
There are a lot of Infineon Technologies
SPD30N08S2L-21 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SPD30N08S2L-21 More Descriptions

MOSFET N-CH 75V 30A DPAK
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to SPD30N08S2L-21.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Rise Time

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Element Configuration

Power Dissipation

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Surface Mount

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
SPD30N08S2L-21

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2003

e0

Obsolete

1 (Unlimited)

2

EAR99

TIN LEAD

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

75V

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

30A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

20.5m Ω @ 25A, 10V

2V @ 80μA

2130pF @ 25V

30A Tc

72nC @ 10V

4.5V 10V

±20V

30A

0.026Ohm

120A

240 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SPD30N03S2L07T

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

-

30V

MOSFET (Metal Oxide)

-

-

-

-

30A

-

-

-

-

-

-

136W Tc

-

-

N-Channel

-

6.7mOhm @ 30A, 10V

2V @ 85μA

2530pF @ 25V

30A Tc

68nC @ 10V

4.5V 10V

±20V

30A

-

-

-

RoHS Compliant

Lead Free

PG-TO252-3

17ns

30V

2.53nF

6.7 mΩ

-

-

-

-

-

-

-

-

-

SPD30N08S2L-21 vs SPD30N03S2L07T
SPD35N10

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

SIPMOS®

2002

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

AVALANCHE RATED

FET General Purpose Power

100V

MOSFET (Metal Oxide)

-

GULL WING

260

-

35A

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

-

150W Tc

ENHANCEMENT MODE

-

N-Channel

-

44m Ω @ 26.4A, 10V

-

1570pF @ 25V

35A Tc

65nC @ 10V

10V

±20V

35A

0.044Ohm

140A

245 mJ

RoHS Compliant

Lead Free

-

63ns

-

-

-

Single

150W

23 ns

39 ns

20V

100V

-

-

-

SPD30N08S2L-21 vs SPD35N10
SPD30N08S2-22

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Obsolete

1 (Unlimited)

2

-

MATTE TIN

AVALANCHE RATED

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

unknown

-

-

4

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

21.5m Ω @ 25A, 10V

4V @ 80μA

1.95pF @ 25V

30A Tc

57nC @ 10V

10V

±20V

-

0.0215Ohm

120A

240 mJ

Non-RoHS Compliant

-

-

-

75V

-

-

-

-

-

-

-

-

YES

30A

75V

SPD30N08S2L-21 vs SPD30N08S2-22