Infineon Technologies SPA08N80C3

Name: SPA08N80C3
Brand: Infineon Technologies
SKU: 2483181-SPA08N80C3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SPA08N80C3

Manufacturer:: Infineon Technologies

Ventron No:: 2483181-SPA08N80C3

Description:: MOSFET N-CH 800V 8A TO220FP

ECAD Model:

Datasheet:: SPA08N80C3

Specifications

Infineon Technologies SPA08N80C3 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPA08N80C3.

Package / Case
TO-220(TO-220-3)
Packaging
Tube-packed
FET Type
N Channel
Rds On (Max) @ Id, Vgs
650mΩ @ 5.1A,10V
Vgs(th) (Max) @ Id
3.9V @ 470uA
Drain to Source Voltage (Vdss)
800V
Continuous Drain Current (Id) @ 25°C
8A
Power Dissipation-Max (Ta=25°C)
40W
RoHS Status
RoHS Compliant

Description

SPA08N80C3 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet SPA08N80C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SPA08N80C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to SPA08N80C3.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Factory Lead Time

Number of Pins

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Voltage - Threshold

Halogen Free

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

Drain to Source Resistance

Rds On Max

Capacitance - Input

Height

Length

Width

REACH SVHC

Lead Free

Supplier Device Package

View Compare
SPA08N80C3

Infineon Technologies

TO-220(TO-220-3)

Tube-packed

N Channel

650mΩ @ 5.1A,10V

3.9V @ 470uA

800V

8A

40W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SPA07N60CFDXKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

700m Ω @ 4.6A, 10V

5V @ 300μA

650V

-

-

ROHS3 Compliant

Through Hole

NO

SILICON

-55°C~150°C TJ

CoolMOS™

2008

e3

yes

Last Time Buy

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

32W Tc

ENHANCEMENT MODE

ISOLATED

SWITCHING

790pF @ 25V

6.6A Tc

47nC @ 10V

10V

±20V

TO-220AB

6.6A

0.7Ohm

17A

600V

230 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SPA08N80C3 vs SPA07N60CFDXKSA1
SPA08N50C3

Infineon Technologies

TO-220-3

Bulk

-

-

-

560V

-

-

RoHS Compliant

-

NO

-

-

-

2005

-

yes

Discontinued

-

3

-

-

-

NOT SPECIFIED

NOT SPECIFIED

3

-

Not Qualified

1

-

32W

ENHANCEMENT MODE

ISOLATED

SWITCHING

-

-

-

-

-

TO-220AB

-

-

22.8A

-

-

8 Weeks

3

150°C

-55°C

AVALANCHE RATED

FET General Purpose Power

560V

THROUGH-HOLE

7.6A

Single

32W

6 ns

3V

Halogen Free

5ns

N-CHANNEL

7 ns

60 ns

7.6A

20V

560V

METAL-OXIDE SEMICONDUCTOR

600mOhm

600 mΩ

750pF

9.83mm

10.65mm

4.85mm

No SVHC

Lead Free

-

SPA08N80C3 vs SPA08N50C3
SPA04N60C3XKSA1

Infineon Technologies

TO-220-3 Full Pack

Tube

N-Channel

950mOhm @ 2.8A, 10V

3.9V @ 200μA

650V

-

-

ROHS3 Compliant

Through Hole

-

-

-55°C~150°C TJ

CoolMOS™

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

31W Tc

-

-

-

490pF @ 25V

4.5A Tc

25nC @ 10V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PG-TO220-FP

SPA08N80C3 vs SPA04N60C3XKSA1