SN7002NH6327XTSA1

Infineon Technologies SN7002NH6327XTSA1

Part Number:
SN7002NH6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
3070315-SN7002NH6327XTSA1
Description:
MOSFET N-CH 60V 200MA SOT23
ECAD Model:
Datasheet:
SN7002NH6327XTSA1

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Specifications
Infineon Technologies SN7002NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SN7002NH6327XTSA1.
  • Factory Lead Time
    70 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Supplier Device Package
    SOT-23-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, SIPMOS®
  • Published
    1996
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    360mW Ta
  • Power Dissipation
    360mW
  • Turn On Delay Time
    2.4 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 26μA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    200mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.5nC @ 10V
  • Rise Time
    3.2ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.6 ns
  • Turn-Off Delay Time
    5.3 ns
  • Continuous Drain Current (ID)
    200mA
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    45pF
  • Rds On Max
    5 Ω
  • RoHS Status
    ROHS3 Compliant
Description
SN7002NH6327XTSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.It is [5.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SN7002NH6327XTSA1 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 5.3 ns
a 60V drain to source voltage (Vdss)


SN7002NH6327XTSA1 Applications
There are a lot of Infineon Technologies
SN7002NH6327XTSA1 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SN7002NH6327XTSA1 More Descriptions
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistors
Mosfet, N-Ch, 60V, 0.2A, Sot-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):2.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Rohs Compliant: Yes |Infineon SN7002NH6327XTSA1
Product Comparison
The three parts on the right have similar specifications to SN7002NH6327XTSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Rds On Max
    RoHS Status
    Surface Mount
    ECCN Code
    Subcategory
    Reach Compliance Code
    Configuration
    Operating Mode
    Drain Current-Max (Abs) (ID)
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    JESD-609 Code
    Terminal Finish
    View Compare
  • SN7002NH6327XTSA1
    SN7002NH6327XTSA1
    70 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SOT-23-3
    -55°C~150°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, SIPMOS®
    1996
    Discontinued
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    360mW Ta
    360mW
    2.4 ns
    N-Channel
    5Ohm @ 500mA, 10V
    1.8V @ 26μA
    45pF @ 25V
    200mA Ta
    1.5nC @ 10V
    3.2ns
    60V
    4.5V 10V
    ±20V
    3.6 ns
    5.3 ns
    200mA
    20V
    45pF
    5 Ω
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SN7002W E6327
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    500mW Ta
    -
    -
    N-Channel
    5 Ω @ 230mA, 10V
    1.8V @ 26μA
    45pF @ 25V
    230mA Ta
    1.5nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    YES
    EAR99
    FET General Purpose Power
    unknown
    Single
    ENHANCEMENT MODE
    0.23A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SN7002N E6327
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    1996
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    360mW Ta
    -
    -
    N-Channel
    5 Ω @ 500mA, 10V
    1.8V @ 26μA
    45pF @ 25V
    200mA Ta
    1.5nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    YES
    EAR99
    -
    compliant
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    0.2A
    SILICON
    yes
    3
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PDSO-G3
    Not Qualified
    5Ohm
    60V
    4.2 pF
    -
    -
  • SN7002W L6327
    -
    -
    Surface Mount
    SC-70, SOT-323
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    500mW Ta
    -
    -
    N-Channel
    5 Ω @ 230mA, 10V
    1.8V @ 26μA
    45pF @ 25V
    230mA Ta
    1.5nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    YES
    EAR99
    FET General Purpose Power
    compliant
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    0.23A
    SILICON
    -
    3
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    DUAL
    GULL WING
    260
    40
    3
    R-PDSO-G3
    Not Qualified
    5Ohm
    60V
    4.5 pF
    e3
    MATTE TIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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