Infineon Technologies SN7002NH6327XTSA1
- Part Number:
- SN7002NH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070315-SN7002NH6327XTSA1
- Description:
- MOSFET N-CH 60V 200MA SOT23
- Datasheet:
- SN7002NH6327XTSA1
Infineon Technologies SN7002NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SN7002NH6327XTSA1.
- Factory Lead Time70 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, SIPMOS®
- Published1996
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max360mW Ta
- Power Dissipation360mW
- Turn On Delay Time2.4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id1.8V @ 26μA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V
- Rise Time3.2ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3.6 ns
- Turn-Off Delay Time5.3 ns
- Continuous Drain Current (ID)200mA
- Gate to Source Voltage (Vgs)20V
- Input Capacitance45pF
- Rds On Max5 Ω
- RoHS StatusROHS3 Compliant
SN7002NH6327XTSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.It is [5.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SN7002NH6327XTSA1 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 5.3 ns
a 60V drain to source voltage (Vdss)
SN7002NH6327XTSA1 Applications
There are a lot of Infineon Technologies
SN7002NH6327XTSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.It is [5.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SN7002NH6327XTSA1 Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 5.3 ns
a 60V drain to source voltage (Vdss)
SN7002NH6327XTSA1 Applications
There are a lot of Infineon Technologies
SN7002NH6327XTSA1 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SN7002NH6327XTSA1 More Descriptions
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistors
Mosfet, N-Ch, 60V, 0.2A, Sot-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):2.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Rohs Compliant: Yes |Infineon SN7002NH6327XTSA1
Small Signal Field-Effect Transistors
Mosfet, N-Ch, 60V, 0.2A, Sot-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:200Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):2.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Rohs Compliant: Yes |Infineon SN7002NH6327XTSA1
The three parts on the right have similar specifications to SN7002NH6327XTSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceRds On MaxRoHS StatusSurface MountECCN CodeSubcategoryReach Compliance CodeConfigurationOperating ModeDrain Current-Max (Abs) (ID)Transistor Element MaterialPbfree CodeNumber of TerminationsAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusDrain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)JESD-609 CodeTerminal FinishView Compare
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SN7002NH6327XTSA170 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q101, SIPMOS®1996Discontinued1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)1360mW Ta360mW2.4 nsN-Channel5Ohm @ 500mA, 10V1.8V @ 26μA45pF @ 25V200mA Ta1.5nC @ 10V3.2ns60V4.5V 10V±20V3.6 ns5.3 ns200mA20V45pF5 ΩROHS3 Compliant-------------------------
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--Surface MountSC-70, SOT-323---55°C~150°C TJTape & Reel (TR)SIPMOS®-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-500mW Ta--N-Channel5 Ω @ 230mA, 10V1.8V @ 26μA45pF @ 25V230mA Ta1.5nC @ 10V-60V4.5V 10V±20V------RoHS CompliantYESEAR99FET General Purpose PowerunknownSingleENHANCEMENT MODE0.23A-----------------
-
--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)SIPMOS®1996Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1360mW Ta--N-Channel5 Ω @ 500mA, 10V1.8V @ 26μA45pF @ 25V200mA Ta1.5nC @ 10V-60V4.5V 10V±20V------RoHS CompliantYESEAR99-compliantSINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.2ASILICONyes3LOGIC LEVEL COMPATIBLE8541.21.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PDSO-G3Not Qualified5Ohm60V4.2 pF--
-
--Surface MountSC-70, SOT-323---55°C~150°C TJTape & Reel (TR)SIPMOS®2003Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1500mW Ta--N-Channel5 Ω @ 230mA, 10V1.8V @ 26μA45pF @ 25V230mA Ta1.5nC @ 10V-60V4.5V 10V±20V------RoHS CompliantYESEAR99FET General Purpose PowercompliantSINGLE WITH BUILT-IN DIODEENHANCEMENT MODE0.23ASILICON-3LOGIC LEVEL COMPATIBLE8541.21.00.95DUALGULL WING260403R-PDSO-G3Not Qualified5Ohm60V4.5 pFe3MATTE TIN
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