Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > SKW30N60HSFKSA1
SKW30N60HSFKSA1

Infineon Technologies SKW30N60HSFKSA1

Part Number:
SKW30N60HSFKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2497068-SKW30N60HSFKSA1
Description:
IGBT 600V 41A 250W TO247-3
ECAD Model:
Datasheet:
SKW30N60HS

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies SKW30N60HSFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SKW30N60HSFKSA1.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    *KW30N60
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    250W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    125ns
  • JEDEC-95 Code
    TO-247AC
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    41A
  • Turn On Time
    39 ns
  • Test Condition
    400V, 30A, 11 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.15V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    301 ns
  • IGBT Type
    NPT
  • Gate Charge
    141nC
  • Current - Collector Pulsed (Icm)
    112A
  • Td (on/off) @ 25°C
    20ns/250ns
  • Switching Energy
    1.15mJ
  • RoHS Status
    RoHS Compliant
Description
SKW30N60HSFKSA1                         Description   The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SKW30N60HSFKSA1                         Features
? 30% lower Eoff compared to previous generation ? Short circuit withstand time – 10 μs ? Designed for operation above 30 kHz ? NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution ? High ruggedness, temperature stable behaviour ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1  for target applications   SKW30N60HSFKSA1                           Applications
·Induction cooking nverterized microwave ovens ·Resonant converters    

Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for SKW30N60HSFKSA1
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.