Vishay Siliconix SISA04DN-T1-GE3
- Part Number:
- SISA04DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483771-SISA04DN-T1-GE3
- Description:
- MOSFET N-CH 30V 40A 1212-8
- Datasheet:
- SISA04DN-T1-GE3
Vishay Siliconix SISA04DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SISA04DN-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2012
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance2.15mOhm
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- JESD-30 CodeS-PDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.7W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.7W
- Case ConnectionDRAIN
- Turn On Delay Time24 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.15m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3595pF @ 15V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)20V, -16V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage1.1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)20 mJ
- Nominal Vgs1.1 V
- Height1.0668mm
- Length3.1496mm
- Width3.1496mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SISA04DN-T1-GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 20 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3595pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.1V, which means that it will not activate any of its functions when its threshold voltage reaches 1.1V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SISA04DN-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.1V
SISA04DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SISA04DN-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 20 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3595pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.1V, which means that it will not activate any of its functions when its threshold voltage reaches 1.1V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SISA04DN-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.1V
SISA04DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SISA04DN-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SISA04DN-T1-GE3 More Descriptions
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
Semiconcuctor, Mosfet;TrenchFET;N-Channel;30V;40A;2.15mohm @ 10V;PowerPAK 1212-8 | Siliconix / Vishay SISA04DN-T1-GE3
Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
30V 40A 3.7W 2.15m´Î@10V15A 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV
N-Ch PowerPAK1212 BWL 30V 2.2mohm@10V
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to 150°C; Voltage Vgs Max:30V
Semiconcuctor, Mosfet;TrenchFET;N-Channel;30V;40A;2.15mohm @ 10V;PowerPAK 1212-8 | Siliconix / Vishay SISA04DN-T1-GE3
Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
30V 40A 3.7W 2.15m´Î@10V15A 2.2V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV
N-Ch PowerPAK1212 BWL 30V 2.2mohm@10V
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to 150°C; Voltage Vgs Max:30V
The three parts on the right have similar specifications to SISA04DN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinPbfree CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pulsed Drain Current-Max (IDM)Max Power DissipationBase Part NumberView Compare
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SISA04DN-T1-GE314 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012Active1 (Unlimited)5EAR992.15mOhmFET General Purpose PowersMOSFET (Metal Oxide)DUALC BENDS-PDSO-C5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN24 nsN-ChannelSWITCHING2.15m Ω @ 15A, 10V2.2V @ 250μA3595pF @ 15V40A Tc77nC @ 10V4.5V 10V20V, -16V20 ns30 ns40A1.1V20V30V20 mJ1.1 V1.0668mm3.1496mm3.1496mmUnknownNoROHS3 CompliantLead Free-----------
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14 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013Active1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALC BENDS-PDSO-C51-3.5W Ta 28W Tc-ENHANCEMENT MODE3.5WDRAIN-N-ChannelSWITCHING4.3m Ω @ 10A, 10V2.2V @ 250μA2070pF @ 15V25A Tc45nC @ 10V4.5V 10V20V, -16V--25A1.1V20V------UnknownNoROHS3 Compliant-SINGLE WITH BUILT-IN DIODE30V0.0043Ohm30V------
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14 WeeksSurface MountSurface MountPowerPAK® 1212-8-SILICON-55°C~150°C TJCut Tape (CT)TrenchFET®2016Active1 (Unlimited)5EAR995.1mOhm-MOSFET (Metal Oxide)DUALC BENDS-PDSO-C51-3.57W Ta 26.5W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING5.1m Ω @ 10A, 10V2.2V @ 250μA1450pF @ 15V20A Tc29nC @ 10V4.5V 10V20V, -16V--20A---11.25 mJ------ROHS3 Compliant-SINGLE WITH BUILT-IN DIODE30V-30Vyes2404080A--
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14 WeeksSurface MountSurface MountPowerPAK® 1212-88--55°C~150°C TJTape & Reel (TR)TrenchFET®2014Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-----------N-Channel-6.8m Ω @ 15A, 10V2.3V @ 250μA2060pF @ 15V16A Ta47nC @ 10V----16A--------Unknown-ROHS3 Compliant--30V---NOT SPECIFIEDNOT SPECIFIED-3.5WSISA16
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