Vishay Siliconix SIR888DP-T1-GE3
- Part Number:
- SIR888DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490755-SIR888DP-T1-GE3
- Description:
- MOSFET N-CH 25V 40A PPAK SO-8
- Datasheet:
- SIR888DP-T1-GE3
Vishay Siliconix SIR888DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR888DP-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Supplier Device PackagePowerPAK® SO-8
- Weight506.605978mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max5W Ta 48W Tc
- Turn On Delay Time32 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5065pF @ 15V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)40A
- Gate to Source Voltage (Vgs)16V
- Input Capacitance5.065nF
- Drain to Source Resistance3.25mOhm
- Rds On Max3.25 mΩ
- Height1.04mm
- Length4.9mm
- Width5.89mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SIR888DP-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5065pF @ 15V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.25mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 32 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SIR888DP-T1-GE3 Features
a continuous drain current (ID) of 40A
the turn-off delay time is 40 ns
single MOSFETs transistor is 3.25mOhm
a 25V drain to source voltage (Vdss)
SIR888DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR888DP-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5065pF @ 15V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.25mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 32 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SIR888DP-T1-GE3 Features
a continuous drain current (ID) of 40A
the turn-off delay time is 40 ns
single MOSFETs transistor is 3.25mOhm
a 25V drain to source voltage (Vdss)
SIR888DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR888DP-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SIR888DP-T1-GE3 More Descriptions
Trans MOSFET N-CH 25V 29A 8-Pin PowerPAK SO T/R
N-CHANNEL 25-V(D-S) MOSFET
MOSFET N-CH 25V 40A PPAK SO-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:40000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.004ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
N-CHANNEL 25-V(D-S) MOSFET
MOSFET N-CH 25V 40A PPAK SO-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:40000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.004ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SIR888DP-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeNumber of ElementsElement ConfigurationPower DissipationThreshold VoltageREACH SVHCLead FreeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain to Source Breakdown VoltageQualification StatusAvalanche Energy Rating (Eas)Nominal VgsView Compare
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SIR888DP-T1-GE3Surface MountSurface MountPowerPAK® SO-88PowerPAK® SO-8506.605978mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)15W Ta 48W Tc32 nsN-Channel3.25mOhm @ 15A, 10V2.2V @ 250μA5065pF @ 15V40A Tc120nC @ 10V14ns25V4.5V 10V±16V11 ns40 ns40A16V5.065nF3.25mOhm3.25 mΩ1.04mm4.9mm5.89mmNoROHS3 Compliant--------------------------
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Surface MountSurface MountPowerPAK® SO-88PowerPAK® SO-8506.605978mg-55°C~150°C TJCut Tape (CT)TrenchFET®2011Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)16.25W Ta 104W Tc15 nsN-Channel4.8mOhm @ 20A, 10V2.8V @ 250μA2900pF @ 40V60A Tc90nC @ 10V14ns80V4.5V 10V±20V8 ns36 ns60A20V2.9nF4mOhm4.8 mΩ---NoROHS3 Compliant14 Weeks1Single6.25W1.2VUnknownLead Free------------------
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Surface MountSurface MountPowerPAK® SO-88---55°C~150°C TJTape & Reel (TR)TrenchFET®2015Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-5W Ta 62.5W Tc28 nsN-Channel10.8m Ω @ 20A, 10V2.8V @ 250μA1640pF @ 50V40A Tc48nC @ 10V31ns-4.5V 10V±20V17 ns36 ns40A20V------NoROHS3 Compliant-1Single5W1.2VUnknown-SILICONyes5EAR99FET General Purpose PowersDUALC BEND260408R-XDSO-C5ENHANCEMENT MODEDRAINSWITCHING100V---
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Surface MountSurface MountPowerPAK® SO-88-506.605978mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)--MOSFET (Metal Oxide)15.4W Ta 83W Tc-N-Channel8.7m Ω @ 20A, 10V2.8V @ 250μA1930pF @ 50V60A Tc58nC @ 10V--4.5V 10V±20V--60A20V-------ROHS3 Compliant14 Weeks1Single5.4W1.2VUnknownLead FreeSILICONyes5EAR99FET General Purpose PowerDUALC BENDNOT SPECIFIEDNOT SPECIFIED8R-XDSO-C5ENHANCEMENT MODEDRAINSWITCHING100VNot Qualified45 mJ1.2 V
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