Vishay Siliconix SIR840DP-T1-GE3
- Part Number:
- SIR840DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071365-SIR840DP-T1-GE3
- Description:
- MOSFET N-CH 30V PPAK SO-8
- ECAD Model:
-
- Datasheet:
- SIR840DP-T1-GE3
Vishay Siliconix SIR840DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR840DP-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Supplier Device PackagePowerPAK® SO-8
- Weight506.605978mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- FET TypeN-Channel
- Drain to Source Voltage (Vdss)30V
- RoHS StatusROHS3 Compliant
SIR840DP-T1-GE3 Overview
The transistor must receive a 30V drain to source voltage (Vdss) in order to function.
SIR840DP-T1-GE3 Features
a 30V drain to source voltage (Vdss)
SIR840DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR840DP-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The transistor must receive a 30V drain to source voltage (Vdss) in order to function.
SIR840DP-T1-GE3 Features
a 30V drain to source voltage (Vdss)
SIR840DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR840DP-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SIR840DP-T1-GE3 More Descriptions
MOSFET N-CH 30V PPAK SO-8
N-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:6.25W ;RoHS Compliant: Yes
N-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:6.25W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SIR840DP-T1-GE3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyNumber of ChannelsFET TypeDrain to Source Voltage (Vdss)RoHS StatusFactory Lead TimeNumber of PinsSeriesPublishedMax Operating TemperatureMin Operating TemperatureNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxREACH SVHCRadiation HardeningLead FreeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain to Source Breakdown VoltageResistanceAvalanche Energy Rating (Eas)View Compare
-
SIR840DP-T1-GE3Surface MountSurface MountPowerPAK® SO-8PowerPAK® SO-8506.605978mg-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)1N-Channel30VROHS3 Compliant------------------------------------------------ -
Surface MountSurface MountPowerPAK® SO-8PowerPAK® SO-8506.605978mg-55°C~150°C TJCut Tape (CT)Active1 (Unlimited)MOSFET (Metal Oxide)1N-Channel80VROHS3 Compliant14 Weeks8TrenchFET®2011150°C-55°C16.25W Ta 104W TcSingle6.25W15 ns4.8mOhm @ 20A, 10V2.8V @ 250μA2900pF @ 40V60A Tc90nC @ 10V14ns4.5V 10V±20V8 ns36 ns60A1.2V20V2.9nF4mOhm4.8 mΩUnknownNoLead Free-----------------
-
Surface MountSurface MountPowerPAK® SO-8---55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)-N-Channel-ROHS3 Compliant-8TrenchFET®2015--15W Ta 62.5W TcSingle5W28 ns10.8m Ω @ 20A, 10V2.8V @ 250μA1640pF @ 50V40A Tc48nC @ 10V31ns4.5V 10V±20V17 ns36 ns40A1.2V20V---UnknownNo-SILICONyes5EAR99FET General Purpose PowersDUALC BEND260408R-XDSO-C5ENHANCEMENT MODEDRAINSWITCHING100V--
-
Surface MountSurface MountPowerPAK® SO-8-506.605978mg-55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)2N-Channel-ROHS3 Compliant14 Weeks8TrenchFET®2015--15.4W Ta 83W TcDual5.4W-6.3m Ω @ 20A, 10V3V @ 250μA2289pF @ 40V60A Tc72nC @ 10V-4.5V 10V±20V--60A1.5V20V---UnknownNoLead FreeSILICON-5EAR99FET General Purpose Powers-C BEND---R-PDSO-C5ENHANCEMENT MODEDRAINSWITCHING80V8.9MOhm45 mJ
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 March 2024
ULN2003 Alternatives, Characteristics, Working Principle and Application
Ⅰ. ULN2003 overviewⅡ. What are the characteristics of ULN2003?Ⅲ. Pin diagram and functions of ULN2003Ⅳ. Working principle and function of ULN2003Ⅴ. ULN2003 drive circuit diagramⅥ. Where is ULN2003... -
15 March 2024
Detailed Explanation of 24C02 EEPROM Memory Chip
Ⅰ. Overview of 24C02Ⅱ. Functions of 24C02Ⅲ. Basic operations of 24C02Ⅳ. Application of 24C02Ⅴ. 24C02 pinoutⅥ. How to protect the data of 24C02?Ⅶ. How to use 24C02?EEPROM refers... -
18 March 2024
LM324N Internal Structure, Working Principle and LM324 vs LM324N
Ⅰ. Overview of LM324NⅡ. Internal structure and working principle of LM324NⅢ. Typical performance characteristics of LM324NⅣ. How to configure the power supply for LM324N?Ⅴ. Pin description of LM324NⅥ.... -
18 March 2024
TDA7377 Audio Power Amplifier Alternatives, Application and Other Details
Ⅰ. Overview of TDA7377Ⅱ. Performance evaluation of TDA7377Ⅲ. Internal circuit diagram of TDA7377Ⅳ. Application of TDA7377Ⅴ. PCB-layout grounding of TDA7377Ⅵ. TDA7377 power amplifier chip parametersⅦ. How to ensure...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.