SIR882ADP-T1-GE3

Vishay Siliconix SIR882ADP-T1-GE3

Part Number:
SIR882ADP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2482126-SIR882ADP-T1-GE3
Description:
MOSFET N-CH 100V 60A PPAK SO-8
ECAD Model:
Datasheet:
SIR882ADP-T1-GE3

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Specifications
Vishay Siliconix SIR882ADP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR882ADP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Supplier Device Package
    PowerPAK® SO-8
  • Weight
    506.605978mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    TrenchFET®
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    8.7mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.4W Ta 83W Tc
  • Element Configuration
    Single
  • Power Dissipation
    5.4W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8.7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1975pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    1.2V
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    1.975nF
  • Drain to Source Resistance
    7.2mOhm
  • Rds On Max
    8.7 mΩ
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SIR882ADP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1975pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.It is [34 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.2mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SIR882ADP-T1-GE3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 34 ns
single MOSFETs transistor is 7.2mOhm
a threshold voltage of 1.2V
a 100V drain to source voltage (Vdss)


SIR882ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR882ADP-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SIR882ADP-T1-GE3 More Descriptions
Single N-Channel 100V 0.0087 Ohm Medium Voltage ThunderFET® Mosfet PowerPAK-SO-8
MOSFET, N-CH, 100V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Mosfet, N Channel, 100V, 60A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:83W Rohs Compliant: Yes |Vishay SIR882ADP-T1-GE3.
Product Comparison
The three parts on the right have similar specifications to SIR882ADP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Subcategory
    Drain to Source Breakdown Voltage
    View Compare
  • SIR882ADP-T1-GE3
    SIR882ADP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    PowerPAK® SO-8
    506.605978mg
    -55°C~150°C TJ
    Cut Tape (CT)
    TrenchFET®
    2013
    Active
    1 (Unlimited)
    8.7mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    5.4W Ta 83W Tc
    Single
    5.4W
    11 ns
    N-Channel
    8.7mOhm @ 20A, 10V
    2.8V @ 250μA
    1975pF @ 50V
    60A Tc
    60nC @ 10V
    12ns
    100V
    4.5V 10V
    ±20V
    9 ns
    34 ns
    60A
    1.2V
    20V
    1.975nF
    7.2mOhm
    8.7 mΩ
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SIR826DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    PowerPAK® SO-8
    506.605978mg
    -55°C~150°C TJ
    Cut Tape (CT)
    TrenchFET®
    2011
    Active
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    6.25W Ta 104W Tc
    Single
    6.25W
    15 ns
    N-Channel
    4.8mOhm @ 20A, 10V
    2.8V @ 250μA
    2900pF @ 40V
    60A Tc
    90nC @ 10V
    14ns
    80V
    4.5V 10V
    ±20V
    8 ns
    36 ns
    60A
    1.2V
    20V
    2.9nF
    4mOhm
    4.8 mΩ
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SIR874DP-T1-GE3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    506.605978mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    3.9W Ta 29.8W Tc
    Single
    3.9W
    14 ns
    N-Channel
    9.4m Ω @ 10A, 10V
    2.2V @ 250μA
    985pF @ 15V
    20A Tc
    27nC @ 10V
    12ns
    25V
    4.5V 10V
    ±20V
    9 ns
    19 ns
    20A
    -
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    e3
    yes
    5
    EAR99
    MATTE TIN
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    Not Qualified
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0094Ohm
    50A
    25V
    20 mJ
    -
    -
  • SIR880ADP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    506.605978mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    Active
    1 (Unlimited)
    8.9MOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    2
    5.4W Ta 83W Tc
    Dual
    5.4W
    -
    N-Channel
    6.3m Ω @ 20A, 10V
    3V @ 250μA
    2289pF @ 40V
    60A Tc
    72nC @ 10V
    -
    -
    4.5V 10V
    ±20V
    -
    -
    60A
    1.5V
    20V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    -
    -
    5
    EAR99
    -
    -
    C BEND
    -
    -
    -
    R-PDSO-C5
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    45 mJ
    FET General Purpose Powers
    80V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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