Vishay Siliconix SIR882ADP-T1-GE3
- Part Number:
- SIR882ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482126-SIR882ADP-T1-GE3
- Description:
- MOSFET N-CH 100V 60A PPAK SO-8
- Datasheet:
- SIR882ADP-T1-GE3
Vishay Siliconix SIR882ADP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR882ADP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Supplier Device PackagePowerPAK® SO-8
- Weight506.605978mg
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesTrenchFET®
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance8.7mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.4W Ta 83W Tc
- Element ConfigurationSingle
- Power Dissipation5.4W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1975pF @ 50V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time12ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time34 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage1.2V
- Gate to Source Voltage (Vgs)20V
- Input Capacitance1.975nF
- Drain to Source Resistance7.2mOhm
- Rds On Max8.7 mΩ
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SIR882ADP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1975pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.It is [34 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.2mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SIR882ADP-T1-GE3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 34 ns
single MOSFETs transistor is 7.2mOhm
a threshold voltage of 1.2V
a 100V drain to source voltage (Vdss)
SIR882ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR882ADP-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1975pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.It is [34 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.2mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SIR882ADP-T1-GE3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 34 ns
single MOSFETs transistor is 7.2mOhm
a threshold voltage of 1.2V
a 100V drain to source voltage (Vdss)
SIR882ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR882ADP-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SIR882ADP-T1-GE3 More Descriptions
Single N-Channel 100V 0.0087 Ohm Medium Voltage ThunderFET® Mosfet PowerPAK-SO-8
MOSFET, N-CH, 100V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Mosfet, N Channel, 100V, 60A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:83W Rohs Compliant: Yes |Vishay SIR882ADP-T1-GE3.
MOSFET, N-CH, 100V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
Mosfet, N Channel, 100V, 60A, Powerpak So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:83W Rohs Compliant: Yes |Vishay SIR882ADP-T1-GE3.
The three parts on the right have similar specifications to SIR882ADP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)SubcategoryDrain to Source Breakdown VoltageView Compare
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SIR882ADP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-88PowerPAK® SO-8506.605978mg-55°C~150°C TJCut Tape (CT)TrenchFET®2013Active1 (Unlimited)8.7mOhm150°C-55°CMOSFET (Metal Oxide)115.4W Ta 83W TcSingle5.4W11 nsN-Channel8.7mOhm @ 20A, 10V2.8V @ 250μA1975pF @ 50V60A Tc60nC @ 10V12ns100V4.5V 10V±20V9 ns34 ns60A1.2V20V1.975nF7.2mOhm8.7 mΩUnknownNoROHS3 CompliantLead Free-----------------------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88PowerPAK® SO-8506.605978mg-55°C~150°C TJCut Tape (CT)TrenchFET®2011Active1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)116.25W Ta 104W TcSingle6.25W15 nsN-Channel4.8mOhm @ 20A, 10V2.8V @ 250μA2900pF @ 40V60A Tc90nC @ 10V14ns80V4.5V 10V±20V8 ns36 ns60A1.2V20V2.9nF4mOhm4.8 mΩUnknownNoROHS3 CompliantLead Free----------------------
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-Surface MountSurface MountPowerPAK® SO-88-506.605978mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)113.9W Ta 29.8W TcSingle3.9W14 nsN-Channel9.4m Ω @ 10A, 10V2.2V @ 250μA985pF @ 15V20A Tc27nC @ 10V12ns25V4.5V 10V±20V9 ns19 ns20A-20V-----ROHS3 Compliant-SILICONe3yes5EAR99MATTE TINDUALC BEND260408R-PDSO-C5Not QualifiedENHANCEMENT MODEDRAINSWITCHING0.0094Ohm50A25V20 mJ--
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14 WeeksSurface MountSurface MountPowerPAK® SO-88-506.605978mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2015Active1 (Unlimited)8.9MOhm--MOSFET (Metal Oxide)125.4W Ta 83W TcDual5.4W-N-Channel6.3m Ω @ 20A, 10V3V @ 250μA2289pF @ 40V60A Tc72nC @ 10V--4.5V 10V±20V--60A1.5V20V---UnknownNoROHS3 CompliantLead FreeSILICON--5EAR99--C BEND---R-PDSO-C5-ENHANCEMENT MODEDRAINSWITCHING---45 mJFET General Purpose Powers80V
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