SI9934BDY-T1-E3

Vishay Siliconix SI9934BDY-T1-E3

Part Number:
SI9934BDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2474208-SI9934BDY-T1-E3
Description:
MOSFET 2P-CH 12V 4.8A 8-SOIC
ECAD Model:
Datasheet:
SI9934BDY-T1-E3

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Specifications
Vishay Siliconix SI9934BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9934BDY-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    35mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.1W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI9934
  • Pin Count
    8
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.1W
  • Turn On Delay Time
    19 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 6.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    4.8A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    12V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    80 ns
  • Continuous Drain Current (ID)
    -6.4A
  • Threshold Voltage
    -1.4V
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -12V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI9934BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI9934BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI9934BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI9934BDY-T1-E3 More Descriptions
Transistor: 2xP-MOSFET; unipolar; -12V; -4.8A; 0.035ohm; 1.1W; -55 150 deg.C; SMD; SO8
Trans MOSFET P-CH 12V 4.8A 8-Pin SOIC N T/R
MOSFET, DUAL P CH, -12V, -4.8A, SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI9934BDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Number of Channels
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Input Capacitance (Ciss) (Max) @ Vds
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power - Max
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI9934BDY-T1-E3
    SI9934BDY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    35mOhm
    Matte Tin (Sn)
    Other Transistors
    1.1W
    GULL WING
    260
    40
    SI9934
    8
    2
    Dual
    ENHANCEMENT MODE
    1.1W
    19 ns
    2 P-Channel (Dual)
    35m Ω @ 6.4A, 4.5V
    1.4V @ 250μA
    4.8A
    20nC @ 4.5V
    35ns
    12V
    35 ns
    80 ns
    -6.4A
    -1.4V
    8V
    -12V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.55mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI9936BDY-T1-GE3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Powers
    1.1W
    GULL WING
    250
    40
    SI9936
    8
    2
    Dual
    ENHANCEMENT MODE
    -
    10 ns
    2 N-Channel (Dual)
    35m Ω @ 6A, 10V
    3V @ 250μA
    -
    13nC @ 10V
    15ns
    30V
    10 ns
    25 ns
    4.5A
    1V
    20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    186.993455mg
    2
    0.035Ohm
    30V
    -
    -
    -
    -
    -
    -
    -
  • SI9936DY
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    50MOhm
    -
    -
    900mW
    -
    -
    -
    -
    -
    2
    Dual
    -
    2W
    -
    2 N-Channel (Dual)
    50m Ω @ 5A, 10V
    1V @ 250μA
    -
    35nC @ 10V
    10ns
    30V
    10 ns
    25 ns
    5A
    -
    20V
    30V
    -
    Standard
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    230.4mg
    -
    -
    -
    525pF @ 15V
    -
    -
    -
    -
    -
    -
  • SI9945AEY-T1
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    2.4W
    -
    -
    -
    SI9945
    -
    2
    Dual
    -
    2.4W
    9 ns
    2 N-Channel (Dual)
    80mOhm @ 3.7A, 10V
    3V @ 250μA
    3.7A
    20nC @ 10V
    10ns
    60V
    8 ns
    21 ns
    3.7A
    -
    20V
    60V
    -
    Logic Level Gate
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    186.993455mg
    2
    -
    -
    -
    8-SO
    175°C
    -55°C
    2.4W
    80mOhm
    80 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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