Fairchild/ON Semiconductor SI9936DY

Name: SI9936DY
Brand: Fairchild/ON Semiconductor
SKU: 2847818-SI9936DY
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI9936DY

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847818-SI9936DY

Description:: MOSFET 2N-CH 30V 5A 8-SOIC

ECAD Model:

Datasheet:: SI9936DY

Specifications

Fairchild/ON Semiconductor SI9936DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI9936DY.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
50MOhm
Max Power Dissipation
900mW
Number of Elements
2
Element Configuration
Dual
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
50m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
525pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Standard
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

SI9936DY Description
These N-channel enhanced mode MOSFET are produced using Fairchild Semiconductor's advanced process, which is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
SI9936DY Applications
Battery switch Load switch Motor controls SI9936DY Features
5.0 A, 30 V. RDS(ON) = 0.050 ? @ VGS = 10 V RDS(ON) = 0.080 ? @ VGS = 4.5 V Low gate charge. Fast switching speed. High power and current handling capability

SI9936DY More Descriptions

Res Thick Film 0603 20K Ohm 1% 0.1W(1/10W) ±100ppm/C Pad SMD Automotive T/R
TRANS MOSFET N-CH 30V 5A 8SOIC
Product Description Demo for Development.
These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Product Comparison

The three parts on the right have similar specifications to SI9936DY.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Power Dissipation

Number of Elements

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

RoHS Status

Lead Free

Factory Lead Time

Contact Plating

Transistor Element Material

Series

Published

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Channels

Operating Mode

Turn On Delay Time

Power - Max

Transistor Application

Current - Continuous Drain (Id) @ 25°C

Threshold Voltage

Drain Current-Max (Abs) (ID)

FET Technology

Height

Length

Width

REACH SVHC

Radiation Hardening

JESD-609 Code

Terminal Finish

Drain-source On Resistance-Max

Nominal Vgs

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Resistance

Rds On Max

View Compare
SI9936DY

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

50MOhm

900mW

2

Dual

2W

2 N-Channel (Dual)

50m Ω @ 5A, 10V

1V @ 250μA

525pF @ 15V

35nC @ 10V

10ns

30V

10 ns

25 ns

5A

20V

30V

Standard

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI9933CDY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

-50°C~150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

58MOhm

470mW

2

Dual

-

2 P-Channel (Dual)

58m Ω @ 4.8A, 4.5V

1.4V @ 250μA

665pF @ 10V

26nC @ 10V

50ns

20V

13 ns

29 ns

-4A

12V

-20V

Logic Level Gate

ROHS3 Compliant

Lead Free

14 Weeks

Tin

SILICON

TrenchFET®

2009

yes

8

EAR99

Other Transistors

GULL WING

260

30

SI9933

8

2

ENHANCEMENT MODE

21 ns

3.1W

SWITCHING

4A

-1.4V

4A

METAL-OXIDE SEMICONDUCTOR

1.55mm

5mm

4mm

No SVHC

No

-

-

-

-

-

-

-

-

-

SI9936DY vs SI9933CDY-T1-E3
SI9934BDY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

1.1W

2

Dual

1.1W

2 P-Channel (Dual)

35m Ω @ 6.4A, 4.5V

1.4V @ 250μA

-

20nC @ 4.5V

35ns

12V

50 ns

80 ns

4.8A

8V

12V

Logic Level Gate

ROHS3 Compliant

-

-

-

SILICON

TrenchFET®

2014

yes

8

EAR99

Other Transistors

GULL WING

250

40

SI9934

8

-

ENHANCEMENT MODE

19 ns

-

-

-

-1.4V

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

Unknown

No

e3

MATTE TIN

0.035Ohm

-1.4 V

-

-

-

-

-

SI9936DY vs SI9934BDY-T1-GE3
SI9933BDY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

1.1W

2

Dual

1.1W

2 P-Channel (Dual)

60mOhm @ 4.7A, 4.5V

1.4V @ 250μA

-

9nC @ 4.5V

35ns

20V

35 ns

45 ns

3.6A

12V

-20V

Logic Level Gate

ROHS3 Compliant

Lead Free

-

-

-

-

2009

-

-

-

-

-

-

-

SI9933

-

2

-

22 ns

1.1W

-

3.6A

-

-

-

1.55mm

5mm

4mm

-

No

-

-

-

-

8-SO

150°C

-55°C

60mOhm

60 mΩ

SI9936DY vs SI9933BDY-T1-E3