Vishay Siliconix SI9933BDY-T1-E3

Name: SI9933BDY-T1-E3
Brand: Vishay Siliconix
SKU: 2474223-SI9933BDY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI9933BDY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2474223-SI9933BDY-T1-E3

Description:: MOSFET 2P-CH 20V 3.6A 8-SOIC

ECAD Model:

Datasheet:: SI9933BDY-T1-E3

Specifications

Vishay Siliconix SI9933BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9933BDY-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Weight
186.993455mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Base Part Number
SI9933
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Power Dissipation
1.1W
Turn On Delay Time
22 ns
Power - Max
1.1W
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
3.6A
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Rise Time
35ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
3.6A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
FET Feature
Logic Level Gate
Drain to Source Resistance
60mOhm
Rds On Max
60 mΩ
Height
1.55mm
Length
5mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI9933BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI9933BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI9933BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI9933BDY-T1-E3 More Descriptions

Trans MOSFET P-CH 20V 3.6A 8-Pin SOIC N T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.7A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
MOSFET, PP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-20V; Current, Id Cont:3.6A; Resistance, Rds On:0.06ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1.4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:40A; No. of Pins:8; P Channel Gate Charge:6nC; Power, Pd:1.1W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V:0.1ohm; Resistance, Rds on @ Vgs = 4.5V:0.06ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:20V; Width, Tape:12mm

Product Comparison

The three parts on the right have similar specifications to SI9933BDY-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Base Part Number

Number of Elements

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Operating Mode

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Threshold Voltage

Drain Current-Max (Abs) (ID)

FET Technology

Max Junction Temperature (Tj)

Nominal Vgs

REACH SVHC

View Compare
SI9933BDY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

2009

Obsolete

1 (Unlimited)

150°C

-55°C

1.1W

SI9933

2

2

Dual

1.1W

22 ns

1.1W

2 P-Channel (Dual)

60mOhm @ 4.7A, 4.5V

1.4V @ 250μA

3.6A

9nC @ 4.5V

35ns

20V

35 ns

45 ns

3.6A

12V

-20V

Logic Level Gate

60mOhm

60 mΩ

1.55mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI9945BDY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

2011

Active

1 (Unlimited)

-

-

3.1W

SI9945

2

2

Dual

3.1W

10 ns

-

2 N-Channel (Dual)

58m Ω @ 4.3A, 10V

3V @ 250μA

5.3A

20nC @ 10V

15ns

-

10 ns

20 ns

4.3A

20V

60V

Logic Level Gate

-

-

1.75mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

14 Weeks

SILICON

TrenchFET®

e3

yes

8

EAR99

58mOhm

Matte Tin (Sn)

FET General Purpose Powers

GULL WING

260

30

8

ENHANCEMENT MODE

SWITCHING

665pF @ 15V

1V

5.3A

METAL-OXIDE SEMICONDUCTOR

150°C

2.5 V

No SVHC

SI9933BDY-T1-E3 vs SI9945BDY-T1-GE3
SI9936BDY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

2015

Obsolete

1 (Unlimited)

150°C

-55°C

1.1W

SI9936

2

2

Dual

1.1W

10 ns

1.1W

2 N-Channel (Dual)

35mOhm @ 6A, 10V

3V @ 250μA

4.5A

13nC @ 10V

15ns

30V

15 ns

25 ns

6A

20V

30V

Logic Level Gate

35mOhm

35 mΩ

1.55mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

35mOhm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI9933BDY-T1-E3 vs SI9936BDY-T1-E3
SI9945AEY-T1

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

186.993455mg

-55°C~175°C TJ

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

175°C

-55°C

2.4W

SI9945

2

2

Dual

2.4W

9 ns

2.4W

2 N-Channel (Dual)

80mOhm @ 3.7A, 10V

3V @ 250μA

3.7A

20nC @ 10V

10ns

60V

8 ns

21 ns

3.7A

20V

60V

Logic Level Gate

80mOhm

80 mΩ

1.55mm

5mm

4mm

-

ROHS3 Compliant

-

-

-

TrenchFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI9933BDY-T1-E3 vs SI9945AEY-T1