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SI9945BDY-T1-GE3

Vishay Siliconix SI9945BDY-T1-GE3

Part Number:
SI9945BDY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2847570-SI9945BDY-T1-GE3
Description:
MOSFET 2N-CH 60V 5.3A 8-SOIC
ECAD Model:
Datasheet:
SI9945BDY-T1-GE3

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Specifications
Vishay Siliconix SI9945BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9945BDY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    58mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Max Power Dissipation
    3.1W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI9945
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Turn On Delay Time
    10 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 4.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    665pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    15ns
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    4.3A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    2.5 V
  • Height
    1.75mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI9945BDY-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI9945BDY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI9945BDY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI9945BDY-T1-GE3 More Descriptions
Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R
SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8, FULL REEL; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:5.3A; No. of Pins:8Pins RoHS Compliant: No
MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W
Product Comparison
The three parts on the right have similar specifications to SI9945BDY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    Max Junction Temperature (Tj)
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power - Max
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI9945BDY-T1-GE3
    SI9945BDY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    58mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    3.1W
    GULL WING
    260
    30
    SI9945
    8
    2
    2
    Dual
    ENHANCEMENT MODE
    3.1W
    10 ns
    2 N-Channel (Dual)
    SWITCHING
    58m Ω @ 4.3A, 10V
    3V @ 250μA
    665pF @ 15V
    5.3A
    20nC @ 10V
    15ns
    10 ns
    20 ns
    4.3A
    1V
    20V
    5.3A
    60V
    METAL-OXIDE SEMICONDUCTOR
    150°C
    Logic Level Gate
    2.5 V
    1.75mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI9934BDY-T1-GE3
    SI9934BDY-T1-GE3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    MATTE TIN
    Other Transistors
    1.1W
    GULL WING
    250
    40
    SI9934
    8
    2
    -
    Dual
    ENHANCEMENT MODE
    1.1W
    19 ns
    2 P-Channel (Dual)
    -
    35m Ω @ 6.4A, 4.5V
    1.4V @ 250μA
    -
    -
    20nC @ 4.5V
    35ns
    50 ns
    80 ns
    4.8A
    -1.4V
    8V
    -
    12V
    METAL-OXIDE SEMICONDUCTOR
    -
    Logic Level Gate
    -1.4 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    12V
    0.035Ohm
    -
    -
    -
    -
    -
    -
    SI9945BDY-T1-GE3 vs SI9934BDY-T1-GE3
  • SI9945AEY-T1
    SI9945AEY-T1
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    2.4W
    -
    -
    -
    SI9945
    -
    2
    2
    Dual
    -
    2.4W
    9 ns
    2 N-Channel (Dual)
    -
    80mOhm @ 3.7A, 10V
    3V @ 250μA
    -
    3.7A
    20nC @ 10V
    10ns
    8 ns
    21 ns
    3.7A
    -
    20V
    -
    60V
    -
    -
    Logic Level Gate
    -
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    60V
    -
    8-SO
    175°C
    -55°C
    2.4W
    80mOhm
    80 mΩ
    SI9945BDY-T1-GE3 vs SI9945AEY-T1
  • SI9933BDY-T1-E3
    SI9933BDY-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    1.1W
    -
    -
    -
    SI9933
    -
    2
    2
    Dual
    -
    1.1W
    22 ns
    2 P-Channel (Dual)
    -
    60mOhm @ 4.7A, 4.5V
    1.4V @ 250μA
    -
    3.6A
    9nC @ 4.5V
    35ns
    35 ns
    45 ns
    3.6A
    -
    12V
    -
    -20V
    -
    -
    Logic Level Gate
    -
    1.55mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    20V
    -
    8-SO
    150°C
    -55°C
    1.1W
    60mOhm
    60 mΩ
    SI9945BDY-T1-GE3 vs SI9933BDY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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