Vishay Siliconix SI8824EDB-T2-E1

Name: SI8824EDB-T2-E1
Brand: Vishay Siliconix
SKU: 2478982-SI8824EDB-T2-E1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI8824EDB-T2-E1

Manufacturer:: Vishay Siliconix

Ventron No:: 2478982-SI8824EDB-T2-E1

Description:: MOSFET N-CH 20V 2.1A MICROFOOT

ECAD Model:

Datasheet:: SI8824EDB-T2-E1

Specifications

Vishay Siliconix SI8824EDB-T2-E1 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI8824EDB-T2-E1.

Factory Lead Time
44 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-XFBGA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
60mOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
BALL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
500mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.2V 4.5V
Vgs (Max)
±5V
Continuous Drain Current (ID)
2.9A
Threshold Voltage
800mV
DS Breakdown Voltage-Min
20V
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant

Description

SI8824EDB-T2-E1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 400pF @ 10V.This device has a continuous drain current (ID) of [2.9A], which is its maximum continuous current.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 800mV.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.2V 4.5V).

SI8824EDB-T2-E1 Features
a continuous drain current (ID) of 2.9A
a threshold voltage of 800mV
a 20V drain to source voltage (Vdss)

SI8824EDB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8824EDB-T2-E1 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI8824EDB-T2-E1 More Descriptions

Mosfet, N-Ch, 20V, 2.9A, Micro Foot Rohs Compliant: Yes |Vishay SI8824EDB-T2-E1
20V 2.1A 500mW 75m´Î@4.5V1A 800mV@250Ã×A N Channel XFBGA-4 MOSFETs ROHS
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R
Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 20V 2.1A MICROFOOT

Product Comparison

The three parts on the right have similar specifications to SI8824EDB-T2-E1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

DS Breakdown Voltage-Min

REACH SVHC

RoHS Status

Pbfree Code

Terminal Finish

Element Configuration

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Radiation Hardening

Lead Free

Subcategory

Pin Count

Number of Channels

Power Dissipation

Contact Plating

JESD-609 Code

Turn On Delay Time

Drain to Source Breakdown Voltage

Nominal Vgs

View Compare
SI8824EDB-T2-E1

Vishay Siliconix

44 Weeks

Surface Mount

Surface Mount

4-XFBGA

4

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2017

Active

1 (Unlimited)

4

EAR99

60mOhm

MOSFET (Metal Oxide)

BOTTOM

BALL

NOT SPECIFIED

NOT SPECIFIED

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

75m Ω @ 1A, 4.5V

800mV @ 250μA

400pF @ 10V

6nC @ 4.5V

20V

1.2V 4.5V

±5V

2.9A

800mV

20V

Unknown

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI8821EDB-T2-E1

Vishay Siliconix

30 Weeks

Surface Mount

Surface Mount

4-XFBGA, CSPBGA

4

SILICON

-55°C~150°C TJ

Cut Tape (CT)

TrenchFET®

2013

Active

1 (Unlimited)

4

EAR99

-

MOSFET (Metal Oxide)

BOTTOM

BALL

260

30

1

-

500mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

135m Ω @ 1A, 4.5V

1.3V @ 250μA

440pF @ 15V

17nC @ 10V

30V

2.5V 4.5V

±12V

-2.3A

-600mV

30V

Unknown

ROHS3 Compliant

yes

Pure Matte Tin (Sn)

Single

20ns

15 ns

40 ns

12V

0.15Ohm

No

Lead Free

-

-

-

-

-

-

-

-

-

SI8824EDB-T2-E1 vs SI8821EDB-T2-E1
SI8809EDB-T2-E1

Vishay Siliconix

15 Weeks

Surface Mount

Surface Mount

4-XFBGA

4

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2017

Obsolete

1 (Unlimited)

4

EAR99

-

MOSFET (Metal Oxide)

BOTTOM

BALL

260

30

1

-

500mW Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

90m Ω @ 1.5A, 4.5V

900mV @ 250μA

-

15nC @ 8V

20V

1.8V 4.5V

±8V

-2.6A

-

20V

-

ROHS3 Compliant

-

Pure Matte Tin (Sn)

Single

-

-

-

8V

-

No

Lead Free

Other Transistors

4

1

500mW

-

-

-

-

-

SI8824EDB-T2-E1 vs SI8809EDB-T2-E1
SI8802DB-T2-E1

Vishay Siliconix

30 Weeks

Surface Mount

Surface Mount

4-XFBGA

4

SILICON

-55°C~150°C TJ

Digi-Reel®

TrenchFET®

2015

Active

1 (Unlimited)

4

EAR99

54mOhm

MOSFET (Metal Oxide)

BOTTOM

BALL

-

-

1

-

500mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

54m Ω @ 1A, 4.5V

700mV @ 250μA

-

6.5nC @ 4.5V

-

1.2V 4.5V

±5V

3.5A

-

-

Unknown

ROHS3 Compliant

-

-

Single

15ns

7 ns

22 ns

5V

-

No

Lead Free

FET General Purpose Power

4

1

500mW

Tin

e3

5 ns

8V

350 mV

SI8824EDB-T2-E1 vs SI8802DB-T2-E1