Vishay Siliconix SI8800EDB-T2-E1
- Part Number:
- SI8800EDB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478045-SI8800EDB-T2-E1
- Description:
- MOSFET N-CH 20V MICROFOOT
- ECAD Model:
-
- Datasheet:
- SI8800EDB-T2-E1
Vishay Siliconix SI8800EDB-T2-E1 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI8800EDB-T2-E1.
- Factory Lead Time30 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-XFBGA, CSPBGA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance80mOhm
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- Number of Elements1
- Number of Channels2
- Power Dissipation-Max500mW Ta
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation900mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs80m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 8V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)350 ns
- Continuous Drain Current (ID)2.8A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)2A
- Drain to Source Breakdown Voltage20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI8800EDB-T2-E1 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
SI8800EDB-T2-E1 Features
a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 20V voltage
SI8800EDB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8800EDB-T2-E1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).
SI8800EDB-T2-E1 Features
a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 20V voltage
SI8800EDB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8800EDB-T2-E1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI8800EDB-T2-E1 More Descriptions
Single N-Channel 20 V 8 mO 3.2 nC Surface Mount Power Mosfet - MICRO FOOT
Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R / MOSFET N-CH 20V MICROFOOT
N-Ch Mosfet Mfoot 1X1 20V 80Mohm @ 4.5V Rohs Compliant: No
Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R / MOSFET N-CH 20V MICROFOOT
N-Ch Mosfet Mfoot 1X1 20V 80Mohm @ 4.5V Rohs Compliant: No
The three parts on the right have similar specifications to SI8800EDB-T2-E1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Turn On Delay TimeRise TimeTurn-Off Delay TimeThreshold VoltageHeightLengthWidthREACH SVHCDrain-source On Resistance-MaxView Compare
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SI8800EDB-T2-E130 WeeksSurface MountSurface Mount4-XFBGA, CSPBGA4SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)4EAR9980mOhmMATTE TINFET General Purpose PowerMOSFET (Metal Oxide)BOTTOMBALL26030412500mW TaDualENHANCEMENT MODE900mWN-ChannelSWITCHING80m Ω @ 1A, 4.5V1V @ 250μA8.3nC @ 8V1.5V 4.5V±8V350 ns2.8A8V2A20VNoROHS3 CompliantLead Free------------- -
30 Weeks-Surface Mount4-XFBGA---55°C~150°C TJTape & Reel (TR)TrenchFET® Gen III---Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)-------900mW Tc---P-Channel-95m Ω @ 1A, 4.5V800mV @ 250μA10nC @ 4.5V1.5V 4.5V±8V------ROHS3 Compliant-580pF @ 10V2.7A Tc20V---------
-
44 WeeksSurface MountSurface Mount4-XFBGA4--55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3-Active1 (Unlimited)-EAR99-Matte Tin (Sn)-MOSFET (Metal Oxide)------1500mW TaSingle-900mWN-Channel-43m Ω @ 1A, 4.5V1V @ 250μA17nC @ 8V1.8V 4.5V±8V12 ns3.9A8V--NoROHS3 CompliantLead Free--12V10 ns20ns30 ns400mV213μm840μm840μmNo SVHC-
-
44 WeeksSurface MountSurface Mount4-XFBGA4SILICON-55°C~150°C TJCut Tape (CT)TrenchFET®2015-yesActive1 (Unlimited)4EAR99-Pure Matte Tin (Sn)-MOSFET (Metal Oxide)BOTTOMBALL26030-1-500mW TaSingleENHANCEMENT MODE-N-ChannelSWITCHING109m Ω @ 1A, 10V1.4V @ 250μA8nC @ 10V2.5V 10V±12V10 ns2.3A12V1.5A30VNoROHS3 CompliantLead Free195pF @ 15V--15 ns20ns20 ns600mV---No SVHC0.123Ohm
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