Vishay Siliconix SI7461DP-T1-GE3
- Part Number:
- SI7461DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478209-SI7461DP-T1-GE3
- Description:
- MOSFET P-CH 60V 8.6A PPAK SO-8
- Datasheet:
- SI7461DP-T1-GE3
Vishay Siliconix SI7461DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7461DP-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierS17-0173-Single
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance6.25mOhm
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.9W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.9W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs14.5m Ω @ 14.4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C8.6A Ta
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time20ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time205 ns
- Continuous Drain Current (ID)-14.4A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)60A
- DS Breakdown Voltage-Min60V
- Max Junction Temperature (Tj)150°C
- Height1.17mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7461DP-T1-GE3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -14.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 205 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI7461DP-T1-GE3 Features
a continuous drain current (ID) of -14.4A
the turn-off delay time is 205 ns
based on its rated peak drain current 60A.
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
SI7461DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7461DP-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -14.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 205 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI7461DP-T1-GE3 Features
a continuous drain current (ID) of -14.4A
the turn-off delay time is 205 ns
based on its rated peak drain current 60A.
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
SI7461DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7461DP-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SI7461DP-T1-GE3 More Descriptions
Single N-Channel 60 V 0.00625 Ohm Surface Mount Power MosFet - POWERPAK-SO-8
P CHANNEL MOSFET, -60V, 14.4A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: No
MOSFET,P CH,60V,8.6A,PPAK SO8; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.9W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Current Id Max: -8.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
P CHANNEL MOSFET, -60V, 14.4A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: No
MOSFET,P CH,60V,8.6A,PPAK SO8; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.9W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Current Id Max: -8.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to SI7461DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor ApplicationDrain to Source Breakdown VoltageTerminal FinishInput Capacitance (Ciss) (Max) @ VdsAvalanche Energy Rating (Eas)View Compare
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SI7461DP-T1-GE314 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICONS17-0173-Single-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)5EAR996.25mOhmFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C5111.9W TaSingleENHANCEMENT MODE1.9WDRAIN20 nsP-Channel14.5m Ω @ 14.4A, 10V3V @ 250μA8.6A Ta190nC @ 10V20ns60V4.5V 10V±20V20 ns205 ns-14.4A-3V20V60A60V150°C1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free------
-
14 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICONS17-0173-Single-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)5EAR9980mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODE1.9WDRAIN14 nsN-Channel80m Ω @ 4A, 10V4.5V @ 250μA3.2A Ta42nC @ 10V20ns-6V 10V±20V20 ns32 ns3.2A4.5V20V40A-150°C1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead FreeSWITCHING200V---
-
14 Weeks-Surface MountSurface MountPowerPAK® SO-88-SILICON--55°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesActive1 (Unlimited)5EAR9933MOhm-MOSFET (Metal Oxide)DUALC BEND260308R-PDSO-C5114.1W Ta 29.7W TcSingleENHANCEMENT MODE29.7WDRAIN10 nsN-Channel33m Ω @ 10A, 10V3V @ 250μA21A Tc19.5nC @ 10V13ns-4.5V 10V±20V9 ns16 ns21A3V20V40A-150°C1.12mm6.25mm5.26mmUnknownNoROHS3 CompliantLead FreeSWITCHING100VMATTE TIN550pF @ 50V7.2 mJ
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--Surface MountSurface MountPowerPAK® SO-88-SILICON--55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)5EAR996.8mOhmOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51-1.9W TaSingleENHANCEMENT MODE1.9WDRAIN25 nsP-Channel6.8m Ω @ 22A, 10V3V @ 250μA13A Ta170nC @ 10V20ns30V10V±25V20 ns180 ns-22A-3V25V60A-----No SVHCNoROHS3 CompliantLead FreeSWITCHING-30VMatte Tin (Sn)--
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