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SI7461DP-T1-E3

Vishay Siliconix SI7461DP-T1-E3

Part Number:
SI7461DP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3070062-SI7461DP-T1-E3
Description:
MOSFET P-CH 60V 8.6A PPAK SO-8
ECAD Model:
Datasheet:
SI7461DP-T1-E3

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Specifications
Vishay Siliconix SI7461DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7461DP-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    S17-0173-Single
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    14.5mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.9W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14.5m Ω @ 14.4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    8.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    190nC @ 10V
  • Rise Time
    20ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    205 ns
  • Continuous Drain Current (ID)
    -12.6A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -3 V
  • Height
    1.17mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7461DP-T1-E3 Description
The SI7461DP-T1-E3 is a P-Channel 60 V (D-S) MOSFET.

SI7461DP-T1-E3 Features
TrenchFET® power MOSFETs
Low thermal resistance PowerPAK® package with low 1.07 mm profile

SI7461DP-T1-E3 Applications
Industrial

SI7461DP-T1-E3 More Descriptions
SI7461DP-T1-E3 P-channel MOSFET Transistor, 8.6 A, 60 V, 8-Pin SOIC | Siliconix / Vishay SI7461DP-T1-E3
Single P-Channel 60 V 0.0145 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-12.6A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI7461DP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Published
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • SI7461DP-T1-E3
    SI7461DP-T1-E3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    S17-0173-Single
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    14.5mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    1.9W
    DRAIN
    20 ns
    P-Channel
    SWITCHING
    14.5m Ω @ 14.4A, 10V
    3V @ 250μA
    8.6A Ta
    190nC @ 10V
    20ns
    60V
    4.5V 10V
    ±20V
    20 ns
    205 ns
    -12.6A
    -3V
    20V
    -60V
    60A
    150°C
    -3 V
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • SI7491DP-T1-GE3
    SI7491DP-T1-GE3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    8.5mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    -
    R-XDSO-C5
    1
    -
    1.8W Ta
    Single
    ENHANCEMENT MODE
    5W
    DRAIN
    150 ns
    P-Channel
    SWITCHING
    8.5m Ω @ 18A, 10V
    3V @ 250μA
    11A Ta
    85nC @ 5V
    190ns
    -
    4.5V 10V
    ±20V
    90 ns
    120 ns
    18A
    -3V
    20V
    30V
    50A
    -
    -3 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    2014
    PURE MATTE TIN
    11A
    -
    SI7461DP-T1-E3 vs SI7491DP-T1-GE3
  • SI7411DN-T1-E3
    SI7411DN-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    19MOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    -
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    23 ns
    P-Channel
    SWITCHING
    19m Ω @ 11.4A, 4.5V
    1V @ 300μA
    7.5A Ta
    41nC @ 4.5V
    45ns
    -
    1.8V 4.5V
    ±8V
    45 ns
    135 ns
    7.5A
    -
    8V
    20V
    30A
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    2015
    Matte Tin (Sn)
    -
    -
    SI7461DP-T1-E3 vs SI7411DN-T1-E3
  • SI7483ADP-T1-GE3
    SI7483ADP-T1-GE3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    -
    1.9W Ta
    Single
    ENHANCEMENT MODE
    1.9W
    DRAIN
    22 ns
    P-Channel
    SWITCHING
    5.7m Ω @ 24A, 10V
    3V @ 250μA
    14A Ta
    180nC @ 10V
    33ns
    -
    4.5V 10V
    ±20V
    33 ns
    210 ns
    14A
    -
    20V
    30V
    60A
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    2016
    MATTE TIN
    -
    0.0057Ohm
    SI7461DP-T1-E3 vs SI7483ADP-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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