Vishay Siliconix SI7460DP-T1-E3

Name: SI7460DP-T1-E3
Brand: Vishay Siliconix
SKU: 2848457-SI7460DP-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7460DP-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848457-SI7460DP-T1-E3

Description:: MOSFET N-CH 60V 11A PPAK SO-8

ECAD Model:

Datasheet:: SI7460DP-T1-E3

Specifications

Vishay Siliconix SI7460DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7460DP-T1-E3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
9.6mOhm
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.9W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.9W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.6m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
40A
Height
1.04mm
Length
4.9mm
Width
5.89mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7460DP-T1-E3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7460DP-T1-E3 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.

SI7460DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7460DP-T1-E3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI7460DP-T1-E3 More Descriptions

Single N-Channel 60 V 0.0096 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Transistors - FETs, MOSFETs - Single 1 (Unlimited) PowerPAK® SO-8 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.6m Ω @ 18A, 10V 11A Ta -55°C~150°C TJ MOSFET N-CH 60V 11A PPAK SO-8
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.9W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7460DP-T1-E3.

Product Comparison

The three parts on the right have similar specifications to SI7460DP-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Threshold Voltage

Drain Current-Max (Abs) (ID)

Nominal Vgs

REACH SVHC

Drain to Source Voltage (Vdss)

View Compare
SI7460DP-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

5

EAR99

9.6mOhm

FAST SWITCHING

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

20 ns

N-Channel

SWITCHING

9.6m Ω @ 18A, 10V

3V @ 250μA

11A Ta

100nC @ 10V

16ns

4.5V 10V

±20V

30 ns

75 ns

11A

20V

60V

40A

1.04mm

4.9mm

5.89mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
SI7491DP-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

PowerPAK® SO-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

8.5mOhm

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

-

R-XDSO-C5

1

-

1.8W Ta

Single

ENHANCEMENT MODE

5W

DRAIN

150 ns

P-Channel

SWITCHING

8.5m Ω @ 18A, 10V

3V @ 250μA

11A Ta

85nC @ 5V

190ns

4.5V 10V

±20V

90 ns

120 ns

18A

20V

30V

50A

-

-

-

No

ROHS3 Compliant

Lead Free

PURE MATTE TIN

-3V

11A

-3 V

Unknown

-

SI7460DP-T1-E3 vs SI7491DP-T1-GE3
SI7411DN-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

19MOhm

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

-

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

23 ns

P-Channel

SWITCHING

19m Ω @ 11.4A, 4.5V

1V @ 300μA

7.5A Ta

41nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

135 ns

7.5A

8V

20V

30A

-

-

-

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

-

-

SI7460DP-T1-E3 vs SI7411DN-T1-E3
SI7459DP-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

PowerPAK® SO-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

6.8mOhm

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

-

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

25 ns

P-Channel

SWITCHING

6.8m Ω @ 22A, 10V

3V @ 250μA

13A Ta

170nC @ 10V

20ns

10V

±25V

20 ns

180 ns

-22A

25V

-30V

60A

-

-

-

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-3V

-

-

No SVHC

30V

SI7460DP-T1-E3 vs SI7459DP-T1-E3