Vishay Siliconix SI7434DP-T1-E3

Name: SI7434DP-T1-E3
Brand: Vishay Siliconix
SKU: 2848991-SI7434DP-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7434DP-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848991-SI7434DP-T1-E3

Description:: MOSFET N-CH 250V 2.3A PPAK SO-8

ECAD Model:

Datasheet:: SI7434DP-T1-E3

Specifications

Vishay Siliconix SI7434DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7434DP-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
155MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.9W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.9W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
155m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.3A Ta
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
23 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
3.8A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2.3A
Pulsed Drain Current-Max (IDM)
40A
DS Breakdown Voltage-Min
250V
Height
1.04mm
Length
4.9mm
Width
5.89mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7434DP-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.8A amps.A device can conduct a maximum continuous current of [2.3A] according to its drain current.It is [47 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

SI7434DP-T1-E3 Features
a continuous drain current (ID) of 3.8A
the turn-off delay time is 47 ns
based on its rated peak drain current 40A.
a 250V drain to source voltage (Vdss)

SI7434DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7434DP-T1-E3 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

SI7434DP-T1-E3 More Descriptions

SI7434DP-T1-E3 Vishay MOSFETs Transistor N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Arrow.com
Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
250V 2.3A 155m´Î@10V3.8A 1.9W 4V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
MOSFET N-CH 250V 2.3A PPAK SO-8
Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
N-CH POWERPAK SO-8 250V 15.5MOHM @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3800mA; Drain Source Voltage, Vds:250V; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI7434DP-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Manufacturer Package Identifier

Published

Threshold Voltage

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

REACH SVHC

Input Capacitance (Ciss) (Max) @ Vds

Avalanche Energy Rating (Eas)

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

View Compare
SI7434DP-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

5

EAR99

155MOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

16 ns

N-Channel

SWITCHING

155m Ω @ 3.8A, 10V

4V @ 250μA

2.3A Ta

50nC @ 10V

23ns

250V

6V 10V

±20V

23 ns

47 ns

3.8A

20V

2.3A

40A

250V

1.04mm

4.9mm

5.89mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
SI7450DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

5

EAR99

80mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

14 ns

N-Channel

SWITCHING

80m Ω @ 4A, 10V

4.5V @ 250μA

3.2A Ta

42nC @ 10V

20ns

-

6V 10V

±20V

20 ns

32 ns

3.2A

20V

-

40A

-

1.17mm

4.9mm

5.89mm

No

ROHS3 Compliant

Lead Free

Tin

S17-0173-Single

2015

4.5V

200V

150°C

Unknown

-

-

-

-

-

SI7434DP-T1-E3 vs SI7450DP-T1-GE3
SI7454DDP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

5

EAR99

33MOhm

MATTE TIN

-

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-PDSO-C5

1

1

4.1W Ta 29.7W Tc

Single

ENHANCEMENT MODE

29.7W

DRAIN

10 ns

N-Channel

SWITCHING

33m Ω @ 10A, 10V

3V @ 250μA

21A Tc

19.5nC @ 10V

13ns

-

4.5V 10V

±20V

9 ns

16 ns

21A

20V

-

40A

-

1.12mm

6.25mm

5.26mm

No

ROHS3 Compliant

Lead Free

-

-

2014

3V

100V

150°C

Unknown

550pF @ 50V

7.2 mJ

-

-

-

SI7434DP-T1-E3 vs SI7454DDP-T1-GE3
SI7440DP-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® SO-8

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

MATTE TIN

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

-

1.9W Ta

Single

ENHANCEMENT MODE

-

DRAIN

18 ns

N-Channel

SWITCHING

6.5m Ω @ 21A, 10V

3V @ 250μA

12A Ta

35nC @ 4.5V

-

-

4.5V 10V

±20V

41 ns

75 ns

12A

20V

-

60A

-

-

-

-

-

ROHS3 Compliant

-

-

-

2015

-

30V

-

-

-

-

unknown

Not Qualified

0.0065Ohm

SI7434DP-T1-E3 vs SI7440DP-T1-GE3