Vishay Siliconix SI7430DP-T1-GE3
- Part Number:
- SI7430DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482217-SI7430DP-T1-GE3
- Description:
- MOSFET N-CH 150V 26A PPAK SO-8
- Datasheet:
- SI7430DP-T1-GE3
Vishay Siliconix SI7430DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7430DP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance45mOhm
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.2W Ta 64W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5.2W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1735pF @ 50V
- Current - Continuous Drain (Id) @ 25°C26A Tc
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)26A
- Threshold Voltage4.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.2A
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)50A
- Avalanche Energy Rating (Eas)20 mJ
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7430DP-T1-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.A device's maximum input capacitance is 1735pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.Its drain current is 7.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.
SI7430DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
a threshold voltage of 4.5V
SI7430DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7430DP-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.A device's maximum input capacitance is 1735pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.Its drain current is 7.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.
SI7430DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
a threshold voltage of 4.5V
SI7430DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7430DP-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7430DP-T1-GE3 More Descriptions
Single N-Channel 150 V 0.045 Ohm Surface Mount Power Mosfet - PowerPAK SO-8
MOSFET N-CH 150V 26A PPAK SO-8 / Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: No
MOSFET,N CH,DIODE,150V,26A,SO-8 PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.2A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
MOSFET N-CH 150V 26A PPAK SO-8 / Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: No
MOSFET,N CH,DIODE,150V,26A,SO-8 PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.2A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
The three parts on the right have similar specifications to SI7430DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingManufacturer Package IdentifierSeriesMax Junction Temperature (Tj)Reach Compliance CodeQualification StatusDrain-source On Resistance-MaxView Compare
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SI7430DP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)5EAR9945mOhmMATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308R-XDSO-C5115.2W Ta 64W TcSingleENHANCEMENT MODE5.2WDRAIN16 nsN-ChannelSWITCHING45m Ω @ 5A, 10V4.5V @ 250μA1735pF @ 50V26A Tc43nC @ 10V12ns8V 10V±20V7 ns20 ns26A4.5V20V7.2A150V50A20 mJ1.04mm4.9mm5.89mmNo SVHCNoROHS3 CompliantLead Free--------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)5EAR9980mOhm-FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5111.9W TaSingleENHANCEMENT MODE1.9WDRAIN14 nsN-ChannelSWITCHING80m Ω @ 4A, 10V4.5V @ 250μA-3.2A Ta42nC @ 10V20ns6V 10V±20V20 ns32 ns3.2A4.5V20V-200V40A-1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead FreeTinS17-0173-SingleTrenchFET®150°C---
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14 WeeksSurface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR9933MOhmMATTE TIN-MOSFET (Metal Oxide)DUALC BEND260308R-PDSO-C5114.1W Ta 29.7W TcSingleENHANCEMENT MODE29.7WDRAIN10 nsN-ChannelSWITCHING33m Ω @ 10A, 10V3V @ 250μA550pF @ 50V21A Tc19.5nC @ 10V13ns4.5V 10V±20V9 ns16 ns21A3V20V-100V40A7.2 mJ1.12mm6.25mm5.26mmUnknownNoROHS3 CompliantLead Free--TrenchFET®150°C---
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-Surface MountSurface MountPowerPAK® SO-8--SILICON-55°C~150°C TJTape & Reel (TR)2015e3yesObsolete1 (Unlimited)5EAR99-MATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51-1.9W TaSingleENHANCEMENT MODE-DRAIN18 nsN-ChannelSWITCHING6.5m Ω @ 21A, 10V3V @ 250μA-12A Ta35nC @ 4.5V-4.5V 10V±20V41 ns75 ns12A-20V-30V60A------ROHS3 Compliant---TrenchFET®-unknownNot Qualified0.0065Ohm
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