SI7430DP-T1-GE3

Vishay Siliconix SI7430DP-T1-GE3

Part Number:
SI7430DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2482217-SI7430DP-T1-GE3
Description:
MOSFET N-CH 150V 26A PPAK SO-8
ECAD Model:
Datasheet:
SI7430DP-T1-GE3

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Specifications
Vishay Siliconix SI7430DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7430DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    45mOhm
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.2W Ta 64W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1735pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    26A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    26A
  • Threshold Voltage
    4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7.2A
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Avalanche Energy Rating (Eas)
    20 mJ
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7430DP-T1-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.A device's maximum input capacitance is 1735pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.Its drain current is 7.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4.5V.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.

SI7430DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
a threshold voltage of 4.5V


SI7430DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7430DP-T1-GE3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7430DP-T1-GE3 More Descriptions
Single N-Channel 150 V 0.045 Ohm Surface Mount Power Mosfet - PowerPAK SO-8
MOSFET N-CH 150V 26A PPAK SO-8 / Trans MOSFET N-CH 150V 7.2A 8-Pin PowerPAK SO T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:26A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: No
MOSFET,N CH,DIODE,150V,26A,SO-8 PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.2A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to SI7430DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Manufacturer Package Identifier
    Series
    Max Junction Temperature (Tj)
    Reach Compliance Code
    Qualification Status
    Drain-source On Resistance-Max
    View Compare
  • SI7430DP-T1-GE3
    SI7430DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    45mOhm
    MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-XDSO-C5
    1
    1
    5.2W Ta 64W Tc
    Single
    ENHANCEMENT MODE
    5.2W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    45m Ω @ 5A, 10V
    4.5V @ 250μA
    1735pF @ 50V
    26A Tc
    43nC @ 10V
    12ns
    8V 10V
    ±20V
    7 ns
    20 ns
    26A
    4.5V
    20V
    7.2A
    150V
    50A
    20 mJ
    1.04mm
    4.9mm
    5.89mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7450DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    80mOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    1.9W Ta
    Single
    ENHANCEMENT MODE
    1.9W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    80m Ω @ 4A, 10V
    4.5V @ 250μA
    -
    3.2A Ta
    42nC @ 10V
    20ns
    6V 10V
    ±20V
    20 ns
    32 ns
    3.2A
    4.5V
    20V
    -
    200V
    40A
    -
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    Tin
    S17-0173-Single
    TrenchFET®
    150°C
    -
    -
    -
  • SI7454DDP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    33MOhm
    MATTE TIN
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-PDSO-C5
    1
    1
    4.1W Ta 29.7W Tc
    Single
    ENHANCEMENT MODE
    29.7W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    33m Ω @ 10A, 10V
    3V @ 250μA
    550pF @ 50V
    21A Tc
    19.5nC @ 10V
    13ns
    4.5V 10V
    ±20V
    9 ns
    16 ns
    21A
    3V
    20V
    -
    100V
    40A
    7.2 mJ
    1.12mm
    6.25mm
    5.26mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    TrenchFET®
    150°C
    -
    -
    -
  • SI7440DP-T1-GE3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    -
    1.9W Ta
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.5m Ω @ 21A, 10V
    3V @ 250μA
    -
    12A Ta
    35nC @ 4.5V
    -
    4.5V 10V
    ±20V
    41 ns
    75 ns
    12A
    -
    20V
    -
    30V
    60A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    TrenchFET®
    -
    unknown
    Not Qualified
    0.0065Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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