Vishay Siliconix SI5856DC-T1-E3

SI5856DC-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 4.4A.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

SI5856DC-T1-E3 Features
a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns


SI5856DC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5856DC-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.