Vishay Siliconix SI4848DY-T1-E3
- Part Number:
- SI4848DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484642-SI4848DY-T1-E3
- Description:
- MOSFET N-CH 150V 2.7A 8-SOIC
- Datasheet:
- SI4848DY-T1-E3
Vishay Siliconix SI4848DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4848DY-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance85mOhm
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs85m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C2.7A Ta
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)3.7A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2.7A
- Drain to Source Breakdown Voltage150V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Height1.75mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4848DY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [2.7A] according to its drain current.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
SI4848DY-T1-E3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V
SI4848DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [2.7A] according to its drain current.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
SI4848DY-T1-E3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V
SI4848DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI4848DY-T1-E3 More Descriptions
Si4848DY Series 150 V 3.7 A 0.85 Ohm Surface Mount N-Channel Mosfet - SOIC-8
Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R
SI4848DY-T1-E3,N-CH MOSFET SO- 8 150V 85MOHM '@ 10V QG=21NC<
TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:3.7A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R
SI4848DY-T1-E3,N-CH MOSFET SO- 8 150V 85MOHM '@ 10V QG=21NC<
TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:3.7A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to SI4848DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsRadiation HardeningInput CapacitanceTerminal FinishConfigurationDrain to Source Voltage (Vdss)View Compare
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SI4848DY-T1-E314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)8EAR9985mOhmFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260unknown408Not Qualified111.5W TaSingleENHANCEMENT MODE1.5W9 nsN-Channel85m Ω @ 3.5A, 10V2V @ 250μA (Min)2.7A Ta21nC @ 10V10ns6V 10V±20V10 ns24 ns3.7A2V20V2.7A150V150°C2 V1.75mm4.9784mm3.9878mmNo SVHCROHS3 CompliantLead Free--------
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-TinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)8EAR999mOhmFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260-308-112.5W Ta 4.45W TcSingleENHANCEMENT MODE2.5W8 nsN-Channel9m Ω @ 10A, 10V3V @ 250μA16.5A Tc35nC @ 10V11ns4.5V 10V±20V8 ns22 ns16.5A-20V-30V--1.55mm5mm4mm-ROHS3 CompliantLead FreeSWITCHING1525pF @ 15VNo----
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-TinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2017e3yesObsolete1 (Unlimited)8EAR993mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260-408-1-1.6W TaSingleENHANCEMENT MODE1.6W35 nsN-Channel3m Ω @ 25A, 4.5V400mV @ 250μA (Min)17A Ta75nC @ 4.5V41ns1.8V 4.5V±8V115 ns190 ns17A-8V-12V------ROHS3 CompliantLead FreeSWITCHING-No860pF---
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14 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3-Active1 (Unlimited)8EAR9912.5MOhm-MOSFET (Metal Oxide)DUALGULL WING260-308-112.7W Ta 5W Tc-ENHANCEMENT MODE2.7W48 nsP-Channel12.5m Ω @ 10A, 10V2.5V @ 250μA14.9A Tc86nC @ 10V92ns4.5V 10V±25V19 ns34 ns10.9A-1.4V25V--30V--1.5mm5mm4mmNo SVHCROHS3 Compliant-SWITCHING2550pF @ 15VNo-PURE MATTE TINSINGLE WITH BUILT-IN DIODE30V
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