SI4848DY-T1-E3

Vishay Siliconix SI4848DY-T1-E3

Part Number:
SI4848DY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2484642-SI4848DY-T1-E3
Description:
MOSFET N-CH 150V 2.7A 8-SOIC
ECAD Model:
Datasheet:
SI4848DY-T1-E3

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Specifications
Vishay Siliconix SI4848DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4848DY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    85mOhm
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.5W
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    85m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA (Min)
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    3.7A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2.7A
  • Drain to Source Breakdown Voltage
    150V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    2 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4848DY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [2.7A] according to its drain current.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

SI4848DY-T1-E3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
a threshold voltage of 2V


SI4848DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4848DY-T1-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI4848DY-T1-E3 More Descriptions
Si4848DY Series 150 V 3.7 A 0.85 Ohm Surface Mount N-Channel Mosfet - SOIC-8
Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R
SI4848DY-T1-E3,N-CH MOSFET SO- 8 150V 85MOHM '@ 10V QG=21NC<
TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:3.7A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to SI4848DY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Radiation Hardening
    Input Capacitance
    Terminal Finish
    Configuration
    Drain to Source Voltage (Vdss)
    View Compare
  • SI4848DY-T1-E3
    SI4848DY-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    85mOhm
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    unknown
    40
    8
    Not Qualified
    1
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    9 ns
    N-Channel
    85m Ω @ 3.5A, 10V
    2V @ 250μA (Min)
    2.7A Ta
    21nC @ 10V
    10ns
    6V 10V
    ±20V
    10 ns
    24 ns
    3.7A
    2V
    20V
    2.7A
    150V
    150°C
    2 V
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4884BDY-T1-E3
    -
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    9mOhm
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    8
    -
    1
    1
    2.5W Ta 4.45W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    8 ns
    N-Channel
    9m Ω @ 10A, 10V
    3V @ 250μA
    16.5A Tc
    35nC @ 10V
    11ns
    4.5V 10V
    ±20V
    8 ns
    22 ns
    16.5A
    -
    20V
    -
    30V
    -
    -
    1.55mm
    5mm
    4mm
    -
    ROHS3 Compliant
    Lead Free
    SWITCHING
    1525pF @ 15V
    No
    -
    -
    -
    -
  • SI4836DY-T1-E3
    -
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    3mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    8
    -
    1
    -
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    35 ns
    N-Channel
    3m Ω @ 25A, 4.5V
    400mV @ 250μA (Min)
    17A Ta
    75nC @ 4.5V
    41ns
    1.8V 4.5V
    ±8V
    115 ns
    190 ns
    17A
    -
    8V
    -
    12V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SWITCHING
    -
    No
    860pF
    -
    -
    -
  • SI4825DDY-T1-GE3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    -
    Active
    1 (Unlimited)
    8
    EAR99
    12.5MOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    30
    8
    -
    1
    1
    2.7W Ta 5W Tc
    -
    ENHANCEMENT MODE
    2.7W
    48 ns
    P-Channel
    12.5m Ω @ 10A, 10V
    2.5V @ 250μA
    14.9A Tc
    86nC @ 10V
    92ns
    4.5V 10V
    ±25V
    19 ns
    34 ns
    10.9A
    -1.4V
    25V
    -
    -30V
    -
    -
    1.5mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    -
    SWITCHING
    2550pF @ 15V
    No
    -
    PURE MATTE TIN
    SINGLE WITH BUILT-IN DIODE
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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