Vishay Siliconix SI4800BDY-T1-E3

Name: SI4800BDY-T1-E3
Brand: Vishay Siliconix
SKU: 2478575-SI4800BDY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4800BDY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478575-SI4800BDY-T1-E3

Description:: MOSFET N-CH 30V 6.5A 8-SOIC

ECAD Model:

Datasheet:: SI4800BDY-T1-E3

Specifications

Vishay Siliconix SI4800BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4800BDY-T1-E3.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.3W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18.5m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.5A Ta
Gate Charge (Qg) (Max) @ Vgs
13nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
9A
Drain Current-Max (Abs) (ID)
6.5A
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

SI4800BDY-T1-E3 Overview
Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI4800BDY-T1-E3 Features
a continuous drain current (ID) of 9A
a 30V drain to source voltage (Vdss)

SI4800BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4800BDY-T1-E3 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

SI4800BDY-T1-E3 More Descriptions

SI4800BDY-T1-E3 N-channel MOSFET Transistor, 6.5 A, 30 V, 8-Pin SOIC | Siliconix / Vishay SI4800BDY-T1-E3
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:1.3W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4800BDY-T1-E3.

Product Comparison

The three parts on the right have similar specifications to SI4800BDY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

RoHS Status

Contact Plating

Mount

Weight

Pbfree Code

Resistance

Subcategory

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Input Capacitance (Ciss) (Max) @ Vds

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Width

Length

Height

Radiation Hardening

Lead Free

Input Capacitance

Threshold Voltage

REACH SVHC

View Compare
SI4800BDY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2004

e3

Active

1 (Unlimited)

8

EAR99

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1.3W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

18.5m Ω @ 9A, 10V

1.8V @ 250μA

6.5A Ta

13nC @ 5V

30V

4.5V 10V

±25V

9A

6.5A

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4884BDY-T1-E3

Vishay Siliconix

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

-

1

-

2.5W Ta 4.45W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

9m Ω @ 10A, 10V

3V @ 250μA

16.5A Tc

35nC @ 10V

-

4.5V 10V

±20V

16.5A

-

-

ROHS3 Compliant

Tin

Surface Mount

506.605978mg

yes

9mOhm

FET General Purpose Powers

1

Single

2.5W

8 ns

1525pF @ 15V

11ns

8 ns

22 ns

20V

30V

4mm

5mm

1.55mm

No

Lead Free

-

-

-

SI4800BDY-T1-E3 vs SI4884BDY-T1-E3
SI4836DY-T1-E3

Vishay Siliconix

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2017

e3

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

-

1

-

1.6W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

3m Ω @ 25A, 4.5V

400mV @ 250μA (Min)

17A Ta

75nC @ 4.5V

-

1.8V 4.5V

±8V

17A

-

-

ROHS3 Compliant

Tin

Surface Mount

-

yes

3mOhm

FET General Purpose Power

-

Single

1.6W

35 ns

-

41ns

115 ns

190 ns

8V

12V

-

-

-

No

Lead Free

860pF

-

-

SI4800BDY-T1-E3 vs SI4836DY-T1-E3
SI4825DDY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

Active

1 (Unlimited)

8

EAR99

PURE MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

-

1

SINGLE WITH BUILT-IN DIODE

2.7W Ta 5W Tc

ENHANCEMENT MODE

P-Channel

SWITCHING

12.5m Ω @ 10A, 10V

2.5V @ 250μA

14.9A Tc

86nC @ 10V

30V

4.5V 10V

±25V

10.9A

-

-

ROHS3 Compliant

-

Surface Mount

186.993455mg

-

12.5MOhm

-

1

-

2.7W

48 ns

2550pF @ 15V

92ns

19 ns

34 ns

25V

-30V

4mm

5mm

1.5mm

No

-

-

-1.4V

No SVHC

SI4800BDY-T1-E3 vs SI4825DDY-T1-GE3