SI4626ADY-T1-E3

Vishay Siliconix SI4626ADY-T1-E3

Part Number:
SI4626ADY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2486289-SI4626ADY-T1-E3
Description:
MOSFET N-CH 30V 30A 8-SOIC
ECAD Model:
Datasheet:
SI4626ADY-T1-E3

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Specifications
Vishay Siliconix SI4626ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4626ADY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta 6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Turn On Delay Time
    44 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.3m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5370pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    125nC @ 10V
  • Rise Time
    21ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    30A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0033Ohm
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI4626ADY-T1-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5370pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI4626ADY-T1-E3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)


SI4626ADY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4626ADY-T1-E3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI4626ADY-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
MOSFET 30V 30A 6.0W 3.3mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:30000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0041ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI4626ADY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    REACH SVHC
    Resistance
    Terminal Finish
    Lead Free
    View Compare
  • SI4626ADY-T1-E3
    SI4626ADY-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    3W Ta 6W Tc
    Single
    ENHANCEMENT MODE
    3W
    44 ns
    N-Channel
    SWITCHING
    3.3m Ω @ 15A, 10V
    2.5V @ 250μA
    5370pF @ 15V
    30A Tc
    125nC @ 10V
    21ns
    30V
    4.5V 10V
    ±20V
    18 ns
    45 ns
    30A
    20V
    0.0033Ohm
    30V
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4668DY-T1-GE3
    21 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 5W Tc
    Single
    -
    2.5W
    -
    N-Channel
    -
    10.5mOhm @ 15A, 10V
    2.6V @ 250μA
    1654pF @ 15V
    16.2A Tc
    42nC @ 10V
    12ns
    25V
    4.5V 10V
    ±16V
    18 ns
    73 ns
    16.2A
    16V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    8-SO
    150°C
    -55°C
    25V
    1.654nF
    10.5mOhm
    10.5 mΩ
    -
    -
    -
    -
    -
    -
    -
  • SI4634DY-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    2.5W Ta 5.7W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 15A, 10V
    2.6V @ 250μA
    3150pF @ 15V
    24.5A Tc
    68nC @ 10V
    10ns
    30V
    4.5V 10V
    ±20V
    8 ns
    33 ns
    24.5A
    20V
    0.0052Ohm
    30V
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    2.6V
    70A
    45 mJ
    Unknown
    -
    -
    -
  • SI4634DY-T1-E3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    2.5W Ta 5.7W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 15A, 10V
    2.6V @ 250μA
    3150pF @ 15V
    24.5A Tc
    68nC @ 10V
    10ns
    -
    4.5V 10V
    ±20V
    8 ns
    33 ns
    16.3A
    20V
    -
    -
    1.5mm
    5mm
    4mm
    No
    ROHS3 Compliant
    -
    -
    -
    30V
    -
    -
    -
    -
    70A
    -
    -
    5.2mOhm
    MATTE TIN
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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