Vishay Siliconix SI4626ADY-T1-E3
- Part Number:
- SI4626ADY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2486289-SI4626ADY-T1-E3
- Description:
- MOSFET N-CH 30V 30A 8-SOIC
- Datasheet:
- SI4626ADY-T1-E3
Vishay Siliconix SI4626ADY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4626ADY-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3W Ta 6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time44 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.3m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5370pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0033Ohm
- DS Breakdown Voltage-Min30V
- Height1.55mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI4626ADY-T1-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5370pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4626ADY-T1-E3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)
SI4626ADY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4626ADY-T1-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5370pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4626ADY-T1-E3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)
SI4626ADY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4626ADY-T1-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI4626ADY-T1-E3 More Descriptions
Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
MOSFET 30V 30A 6.0W 3.3mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:30000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0041ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
MOSFET 30V 30A 6.0W 3.3mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:30000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0041ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI4626ADY-T1-E3.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxThreshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)REACH SVHCResistanceTerminal FinishLead FreeView Compare
-
SI4626ADY-T1-E314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Active1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING260408113W Ta 6W TcSingleENHANCEMENT MODE3W44 nsN-ChannelSWITCHING3.3m Ω @ 15A, 10V2.5V @ 250μA5370pF @ 15V30A Tc125nC @ 10V21ns30V4.5V 10V±20V18 ns45 ns30A20V0.0033Ohm30V1.55mm5mm4mmNoROHS3 Compliant---------------
-
21 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Active1 (Unlimited)--MOSFET (Metal Oxide)-------2.5W Ta 5W TcSingle-2.5W-N-Channel-10.5mOhm @ 15A, 10V2.6V @ 250μA1654pF @ 15V16.2A Tc42nC @ 10V12ns25V4.5V 10V±16V18 ns73 ns16.2A16V-----NoROHS3 Compliant8-SO150°C-55°C25V1.654nF10.5mOhm10.5 mΩ-------
-
14 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3Active1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING260408112.5W Ta 5.7W TcSingleENHANCEMENT MODE2.5W14 nsN-ChannelSWITCHING5.2m Ω @ 15A, 10V2.6V @ 250μA3150pF @ 15V24.5A Tc68nC @ 10V10ns30V4.5V 10V±20V8 ns33 ns24.5A20V0.0052Ohm30V1.5mm5mm4mmNoROHS3 Compliant-------2.6V70A45 mJUnknown---
-
14 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Active1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING260408112.5W Ta 5.7W TcSingleENHANCEMENT MODE2.5W14 nsN-ChannelSWITCHING5.2m Ω @ 15A, 10V2.6V @ 250μA3150pF @ 15V24.5A Tc68nC @ 10V10ns-4.5V 10V±20V8 ns33 ns16.3A20V--1.5mm5mm4mmNoROHS3 Compliant---30V----70A--5.2mOhmMATTE TINLead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
13 March 2024
NRF52832-QFAA-R Technical Parameters, Manufacturer, Features and Functions
Ⅰ. What is NRF52832-QFAA-R?Ⅱ. Technical parameters of NRF52832-QFAA-RⅢ. Clock control of NRF52832-QFAA-RⅣ. How does NRF52832-QFAA-R communicate with the host?Ⅴ. Who makes NRF52832-QFAA-R?Ⅵ. Features and functions of NRF52832-QFAA-RⅦ. What... -
13 March 2024
74HC595: Efficient 8-Bit Shift Register Chip
Ⅰ. Overview of 74HC595Ⅱ. Pins and functions of 74HC595Ⅲ. Logic diagram of 74HC595Ⅳ. Application of 74HC595Ⅴ. Design of multi-digit LED display based on 74HC595Ⅵ. LED driver circuit design... -
14 March 2024
Comprehensive Understanding of the 78M05 Chip
Ⅰ. Development history of linear voltage regulatorsⅡ. Introduction to 78M05Ⅲ. Pin layout of 78M05Ⅳ. External components of 78M05Ⅴ. Technical key points of 78M05Ⅵ. Internal circuit diagram of 78M05Ⅶ.... -
14 March 2024
What is the NE555 and How Does it Work?
Ⅰ. The birth background of NE555Ⅱ. Introduction to NE555Ⅲ. Design of NE555 timerⅣ. Internal composition of NE555Ⅴ. Operating modes of the NE555Ⅵ. Working principle of NE555Ⅶ. Application of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.