Infineon Technologies SI4435DY

Name: SI4435DY
Brand: Infineon Technologies
SKU: 2492519-SI4435DY
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4435DY

Manufacturer:: Infineon Technologies

Ventron No:: 2492519-SI4435DY

Description:: MOSFET P-CH 30V 8A 8-SOIC

ECAD Model:

Datasheet:: SI4435DY

Specifications

Infineon Technologies SI4435DY technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SI4435DY.

Vgs(th) (Max) @ Id:
1V @ 250µA
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
8-SO
Series:
HEXFET®
Rds On (Max) @ Id, Vgs:
20 mOhm @ 8A, 10V
Power Dissipation (Max):
2.5W (Ta)
Packaging:
Tube
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
2320pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
FET Type:
P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)

Description

The SI4435DY is MOSFET P-CH 30V 8A 8-SOIC , it is part of HEXFET® series. they are designed to work as Transistors - FETs, MOSFETs - Single.SI4435DY with pin details manufactured by International Rectifier (Infineon Technologies). The SI4435DY is available in 8-SO Package,it is part of the electronic component Chips.that includes HEXFET® Series. they are designed to operate as Transistors - FETs, MOSFETs - Single.it is with Operating Temperature -55°C ~ 150°C (TJ).SI4435DY with original stock manufactured by International Rectifier (Infineon Technologies). The SI4435DY is available in 8-SO Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of SI4435DYis designed to work in 8-SOIC (0.154", 3.90mm Width), it's Operating Temperature is -55°C ~ 150°C (TJ).The SI4435DY is available in 8-SOIC (0.154", 3.90mm Width) Package, is part of the Transistors - FETs, MOSFETs - Single and belong to Discrete Semiconductor Products.SI4435DY with EDA / CAD Models manufactured by International Rectifier (Infineon Technologies). The SI4435DY is available in 8-SOPackage, is part of the Discrete Semiconductor Products.The SI4435DY is Transistors - FETs, MOSFETs - Single with package 8-SOIC (0.154", 3.90mm Width) manufactured by International Rectifier (Infineon Technologies). The SI4435DY is available in 8-SO Package, is part of the MOSFET P-CH 30V 8A 8-SOIC.

SI4435DY More Descriptions

MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

Product Comparison

The three parts on the right have similar specifications to SI4435DY.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Transistor Application

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Contact Plating

Subcategory

Nominal Vgs

View Compare
SI4435DY

Infineon Technologies

1V @ 250µA

MOSFET (Metal Oxide)

8-SO

HEXFET®

20 mOhm @ 8A, 10V

2.5W (Ta)

Tube

8-SOIC (0.154", 3.90mm Width)

-55°C ~ 150°C (TJ)

Surface Mount

2320pF @ 15V

60nC @ 10V

P-Channel

-

30V

8A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4427BDY-T1-E3

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Active

1 (Unlimited)

8

EAR99

10.5mOhm

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

12 ns

P-Channel

10.5m Ω @ 12.6A, 10V

1.4V @ 250μA

9.7A Ta

70nC @ 4.5V

15ns

30V

2.5V 10V

±12V

15 ns

242 ns

-12.6A

-1.4V

12V

9.7A

-30V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

SI4435DY vs SI4427BDY-T1-E3
SI4406DY-T1-E3

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Obsolete

1 (Unlimited)

8

EAR99

-

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

21 ns

N-Channel

4.5m Ω @ 20A, 10V

3V @ 250μA

13A Ta

50nC @ 4.5V

15ns

30V

4.5V 10V

±20V

15 ns

100 ns

13A

-

20V

-

-

3.18mm

4.88mm

3.91mm

-

No

ROHS3 Compliant

-

yes

SWITCHING

0.0045Ohm

30V

-

-

-

SI4435DY vs SI4406DY-T1-E3
SI4425BDY-T1-E3

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Active

1 (Unlimited)

8

EAR99

12mOhm

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

20

8

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

15 ns

P-Channel

12m Ω @ 11.4A, 10V

3V @ 250μA

8.8A Ta

100nC @ 10V

13ns

30V

4.5V 10V

±20V

13 ns

100 ns

-11.4A

-400mV

20V

-

-30V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

yes

SWITCHING

-

-

Tin

Other Transistors

-400 mV

SI4435DY vs SI4425BDY-T1-E3

Certification

Related parts for SI4435DY

SI4453DY-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC
SI4427BDY-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 9.7A 8-SOIC
SI4406DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC
SI4470EY-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 9A 8-SOIC
SI4408DY-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC
SI4425BDY-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 8.8A 8-SOIC
SI4430BDY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 14A 8-SOIC
SI4420DY

Infineon Technologies

MOSFET N-CH 30V 12.5A 8-SOIC
SI4404DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC
SI4466DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 9.5A 8-SOIC

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SI4435DY Specification

Part Number	Manufacturers	Description	Stock	Price
SI4435DYTRPBF DISTI #V72:2272_13891298	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R RoHS: Compliant	618	1 $0.9012 10 $0.7772 25 $0.6359 50 $0.5723 100 $0.5452 250 $0.4907 500 $0.471 1000 $0.3682 3000 $0.3313 6000 $0.2982 15000 $0.2925 30000 $0.2867 75000 $0.281
SI4435DY DISTI #V36:1790_06305716	ON Semiconductor	30V, SINGLE, SO-8, PCH	0	2500 $0.3625 25000 $0.3567 250000 $0.3215 1250000 $0.301 2500000 $0.3008
SI4435DY DISTI #V72:2272_06305716	ON Semiconductor	30V, SINGLE, SO-8, PCH	0
SI4435DYTRPBF DISTI #SI4435DYPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Compliant	8403	1 $0.91 10 $0.814 100 $0.6343 500 $0.52398 1000 $0.41367
SI4435DYTRPBF DISTI #SI4435DYPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Compliant	8403	1 $0.91 10 $0.814 100 $0.6343 500 $0.52398 1000 $0.41367
SI4435DYTRPBF DISTI #SI4435DYPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Compliant	8000	4000 $0.37485 8000 $0.35611 12000 $0.34272 28000 $0.33915
SI4435DY DISTI #SI4435DYFSTR-ND	ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant	0	2500 $0.36251 5000 $0.33751 12500 $0.32501 25000 $0.31667
SI4435DY DISTI #SI4435DY-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Not Compliant	0
SI4435DYTR DISTI #SI4435DYTR-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Not Compliant	0
SI4435DYPBF DISTI #SI4435DYPBF-ND	Infineon Technologies AG	MOSFET P-CH 30V 8A 8-SOIC RoHS: Compliant	0
SI4435DY DISTI #SI4435DYFSCT-ND	ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant	0	1 $0.97 10 $0.85 100 $0.6515 500 $0.515 1000 $0.412
SI4435DY DISTI #SI4435DYFSDKR-ND	ON Semiconductor	MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant	0	1 $0.97 10 $0.85 100 $0.6515 500 $0.515 1000 $0.412
SI4435DYTRPBF DISTI #32399733	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R RoHS: Compliant	3700	27 $0.96
SI4435DYTRPBF DISTI #30306933	Infineon Technologies AG	Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R RoHS: Compliant	618	22 $0.9012
SI4435DYPBF DISTI #SI4435DYPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 8A 8-Pin SOIC - Rail/Tube (A RoHS: Compliant	3395
SI4435DY DISTI #SI4435DY	ON Semiconductor	Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R (Alt: RoHS: Compliant	0	2500 $0.414 5000 $0.39808 7500 $0.38333 12500 $0.36964 25000 $0.3569 62500 $0.345 125000 $0.33934
SI4435DY DISTI #SI4435DY	ON Semiconductor	Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R (Alt: RoHS: Compliant	0	2500 $0.3999 5000 $0.3269 10000 $0.2999 15000 $0.2759 25000 $0.2569
SI4435DY DISTI #SI4435DY	ON Semiconductor	Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape RoHS: Compliant	0	2500 $0.2689 5000 $0.2669 10000 $0.2639 15000 $0.2599 25000 $0.2539
SI4435DY DISTI #SI4435DY	ON Semiconductor	Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Bulk RoHS: Not Compliant	0	863 $0.3789 1726 $0.3759 2589 $0.3709 4315 $0.3669 8630 $0.3579
SI4435DY DISTI #38C8609	ON Semiconductor	Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Prod RoHS: Compliant	0	1 $0.981 10 $0.839 25 $0.776 50 $0.713 100 $0.65 250 $0.614 500 $0.577
SI4435DYTRPBF DISTI #SI4435DYTRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Tape and RoHS: Compliant	0	4000 $0.29395 8000 $0.28333 16000 $0.27309 24000 $0.26391 40000 $0.25921
SI4435DYTRPBF DISTI #SI4435DYTRPBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SI44 RoHS: Compliant	0	4000 $0.27857 8000 $0.27083 12000 $0.26351 20000 $0.25658 40000 $0.25325 100000 $0.25 200000 $0.24684
SI4435DYTRPBF DISTI #39M3596	Infineon Technologies AG	Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Product RoHS: Compliant	0
SI4435DYTRPBF DISTI #SP001573756	Infineon Technologies AG	Trans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SP00 RoHS: Compliant	0	4000 $0.2949 8000 $0.2409 16000 $0.2209 24000 $0.2039 40000 $0.1899
SI4435DY DISTI #38C8609	ON Semiconductor	P CHANNEL MOSFET, -30V, 8.8A, SOIC, Transistor Po	0	1 $0.981 10 $0.839 25 $0.776 50 $0.713 100 $0.65 250 $0.614 500 $0.577 1000 $0.461
SI4435DYTRPBF. DISTI #28AC2139	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0	1 $0.387 4000 $0.387
SI4435DY. DISTI #27W2091	ON Semiconductor	TRANSISTOR, MOSFET, Transistor Polarity:P Channel	2011	1 $1.06 10 $0.867 25 $0.766 50 $0.682 100 $0.585 250 $0.514 500 $0.406 1000 $0.391
SI4435DY. DISTI #85AC2176	ON Semiconductor	MOSFET, P CHANNEL0, -30V, -8.8A, SOIC, Transistor	5000	1 $0.406 2500 $0.397 5000 $0.367 10000 $0.343 15000 $0.319 25000 $0.305
SI4435DYTRPBF DISTI #39M3596	Infineon Technologies AG	P CHANNEL MOSFET, 8A, Transistor Polarity:P Chann	731	1 $0.331 10 $0.331 25 $0.331 50 $0.331 100 $0.331 250 $0.331 500 $0.331 1000 $0.304
SI4435DYTRPBF DISTI #31K5362	Infineon Technologies AG	MOSFET Transistor, FULL REEL, Transistor Polarity	0	1 $0.387 4000 $0.387
SI4435DYPBF DISTI #70017629	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.015O RoHS: Compliant	326	1 $1.011 2 $0.991 5 $0.96 10 $0.92 25 $0.859
SI4435DYTRPBF DISTI #70017416	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.015O RoHS: Compliant	0	4000 $0.353 8000 $0.346 20000 $0.335
SI4435DY DISTI #512-SI4435DY	ON Semiconductor	MOSFET 30V SinGLE P-Ch RoHS: Compliant	3136	1 $0.89 10 $0.739 100 $0.477 1000 $0.381
SI4435DYTRPBF DISTI #942-SI4435DYTRPBF	Infineon Technologies AG	MOSFET HEXFET P-CH Low 0.020 Ohm -30V RoHS: Compliant	8103	1 $0.83 10 $0.714 100 $0.549 500 $0.485 1000 $0.383
SI4435DYPBF DISTI #942-SI4435DYPBF	Infineon Technologies AG	MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC RoHS: Compliant	0
SI4435DY-T1-A-E3 DISTI #781-SI4435DY-T1-A-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4435DDY-GE3 RoHS: Compliant	0
SI4435DY-REVA DISTI #781-SI4435DY	Vishay Intertechnologies	MOSFET 30V 8A 2.5W RoHS: Not Compliant	0
SI4435DY-T1-REVA DISTI #781-SI4435DY-TR	Vishay Intertechnologies	MOSFET 30V 8A 2.5W RoHS: Not Compliant	0
SI4435DY DISTI #	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 8.8A I(D), 3 RoHS: Compliant	15483	1 $0.47 25 $0.44 100 $0.42 500 $0.4 1000 $0.38
SI4435DY DISTI #	Vishay Siliconix		1196
SI4435DY DISTI #	Vishay Siliconix		512	9 $0.6 35 $0.39 130 $0.225 446 $0.192
SI4435DY DISTI #	Fairchild Semiconductor Corporation		1900
SI4435DY DISTI #	Vishay Intertechnologies		106
SI4435DY DISTI #	Fairchild Semiconductor Corporation		531
SI4435DY DISTI #	Fairchild Semiconductor Corporation		133
SI4435DYTR DISTI #	International Rectifier		2006
SI4435DY-T1-A-E3 DISTI #	Vishay Intertechnologies		2295
SI4435DY-T1-REVA DISTI #	Vishay Intertechnologies		100
SI4435DY-T1 DISTI #	Vishay Siliconix		2000
SI4435DY-T1 DISTI #	Vishay Intertechnologies		453
SI4435DYTRPBF DISTI #	International Rectifier		10	6 $0.9
SI4435DYTRPBF DISTI #	Fairchild Semiconductor Corporation		1913
SI4435DYPBF DISTI #	International Rectifier		1515
SI4435DYTRPBF DISTI #	International Rectifier		2934
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	948	1 $0.84 144 $0.294 681 $0.2625
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	25	1 $0.84 7 $0.63
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	2	1 $0.84
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	8	1 $0.8 7 $0.64
SI4435DY DISTI #	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	1520	1 $1.05 96 $0.525 382 $0.42
SI4435DY DISTI #	MIXE	MOSFET Transistor, P-Channel, SO	1362	1 $1.05 96 $0.525 382 $0.42
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	956	1 $1.05 96 $0.525 382 $0.42
SI4435DY DISTI #	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SO	204	1 $1.05 25 $0.63 96 $0.525
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	140	1 $1.05 25 $0.525 115 $0.315
SI4435DY DISTI #	Vishay Intertechnologies	MOSFET Transistor, P-Channel, SO	84	1 $1.05 6 $0.84 25 $0.63
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	1412	1 $1.7625 228 $0.705 1136 $0.6169
SI4435DY DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	449	1 $1.8505 55 $0.9253 217 $0.7402
SI4435DY-T1 DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	1600	1 $1.2 84 $0.6 334 $0.48
SI4435DY-T1-REVA DISTI #	Vishay Siliconix	8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	3038	1 $1 572 $0.3125 2561 $0.275
SI4435DY-T1-REVA DISTI #	Vishay Siliconix	8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	1354	1 $1 121 $0.35 572 $0.3125
SI4435DY DISTI #9034412	ON Semiconductor	MOSFET P-CH 30V 8.8A POWERTRENCH SOIC8, PK	520	10 $0.556 50 $0.468 250 $0.381 1000 $0.297 2500 $0.271
SI4435DY DISTI #9034412P	ON Semiconductor	MOSFET P-CH 30V 8.8A POWERTRENCH SOIC8, RL	4160	50 $0.468 250 $0.381 1000 $0.297 2500 $0.271
SI4435DYTRPBF DISTI #1702264	Infineon Technologies AG	MOSFET P-CH 30V 8A HEXFET SOIC8, RL	7420	4000 $0.251 8000 $0.24 12000 $0.231
SI4435DY DISTI #SI4435DY	ON Semiconductor	Transistor: P-MOSFET, unipolar, -30V, -8.8A, 2	503	1 $0.6236 5 $0.434 25 $0.3483 100 $0.3134 500 $0.292
SI4435DY DISTI #	Vishay Siliconix	Small Signal Field-Effect Transistor, 8A I(D), 30V RoHS: Not Compliant	764
SI4435DYTRPBF DISTI #C1S322000510418	Infineon Technologies AG	MOSFETs	3700	10 $0.768 50 $0.628 100 $0.539 500 $0.474 1000 $0.405
SI4435DY. DISTI #1653655	ON Semiconductor	TRANSISTOR, MOSFET	8183	5 $0.601 50 $0.536 100 $0.346 500 $0.311 1000 $0.276
SI4435DYTRPBF DISTI #2577192	Infineon Technologies AG	MOSFET, P-CH, -30V, -8A, SOIC-8	228	1 $0.738 10 $0.609 100 $0.427 250 $0.402 500 $0.377
SI4435DY. DISTI #2985405	ON Semiconductor	MOSFET, P CHANNEL0, -30V, -8.8A, SOIC RoHS: Compliant	5000	2500 $0.47 7500 $0.47
SI4435DY. DISTI #1653655	ON Semiconductor	TRANSISTOR, MOSFET RoHS: Compliant	3490	1 $1.34 10 $1.11 100 $0.719 1000 $0.574 2500 $0.563
SI4435DY. DISTI #1653655RL	ON Semiconductor	TRANSISTOR, MOSFET RoHS: Compliant	0	1 $1.34 10 $1.11 100 $0.719 1000 $0.574 2500 $0.563
SI4435DYPBF DISTI #1013478	Infineon Technologies AG	MOSFET, P, LOGIC, SO-8 RoHS: Compliant	0	1 $1.4 10 $1.24 100 $0.95 500 $0.751
SI4435DYTRPBF DISTI #2577235	Infineon Technologies AG	(Alternate Part Number: SP001573756 RoHS: Compliant	0	4000 $0.565 8000 $0.538
SI4435DYTRPBF DISTI #2577192	Infineon Technologies AG	MOSFET, P-CH, -30V, -8A, SOIC-8 RoHS: Compliant	0	1 $1.25 10 $1.08 100 $0.827 500 $0.731 1000 $0.577 4000 $0.566
SI4435DYTRPBF. DISTI #1374896	Infineon Technologies AG	P CHANNEL MOSFET, 8A RoHS: Compliant	0	1 $1.25 10 $1.08 100 $0.827 500 $0.731 1000 $0.577 4000 $0.566

SI4435D~~(23)~~
SI4435~~(38)~~
SI443~~(101)~~
SI44~~(200)~~
SI4~~(201)~~

Infineon Technologies SI4435DY

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