Vishay Siliconix SI3805DV-T1-GE3
- Part Number:
- SI3805DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483443-SI3805DV-T1-GE3
- Description:
- MOSFET P-CH 20V 3.3A 6-TSOP
- Datasheet:
- SI3805DV-T1-GE3
Vishay Siliconix SI3805DV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3805DV-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesLITTLE FOOT®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance84mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.1W Ta 1.4W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.1W
- Turn On Delay Time18 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs84m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.3A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time40ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)-3.3A
- Threshold Voltage-1.5V
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)3A
- Drain to Source Breakdown Voltage-20V
- FET FeatureSchottky Diode (Isolated)
- Nominal Vgs-1.5 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3805DV-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 330pF @ 10V.This device has a continuous drain current (ID) of [-3.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
SI3805DV-T1-GE3 Features
a continuous drain current (ID) of -3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a threshold voltage of -1.5V
a 20V drain to source voltage (Vdss)
SI3805DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3805DV-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 330pF @ 10V.This device has a continuous drain current (ID) of [-3.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
SI3805DV-T1-GE3 Features
a continuous drain current (ID) of -3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a threshold voltage of -1.5V
a 20V drain to source voltage (Vdss)
SI3805DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3805DV-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3805DV-T1-GE3 More Descriptions
Single P-Channel 20 V 0.084 O 12 nC Surface Mount Power Mosfet - TSOP-6.
Trans MOSFET P-CH 20V 3A 5-Pin TSOP T/R
P Channel Mosfet, -20V, 3.3A, Tsop, Full Reel; Transistor Polarity:p Channel Schottky; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.3A; On Resistance Rds(On):0.084Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
Trans MOSFET P-CH 20V 3A 5-Pin TSOP T/R
P Channel Mosfet, -20V, 3.3A, Tsop, Full Reel; Transistor Polarity:p Channel Schottky; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.3A; On Resistance Rds(On):0.084Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
The three parts on the right have similar specifications to SI3805DV-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeElement ConfigurationDrain-source On Resistance-MaxFactory Lead TimeHeightLengthWidthView Compare
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SI3805DV-T1-GE3Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)LITTLE FOOT®2016e3yesObsolete1 (Unlimited)6EAR9984mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603061SINGLE WITH BUILT-IN DIODE11.1W Ta 1.4W TcENHANCEMENT MODE1.1W18 nsP-ChannelSWITCHING84m Ω @ 3A, 10V1.5V @ 250μA330pF @ 10V3.3A Tc12nC @ 10V40ns20V2.5V 10V±12V10 ns18 ns-3.3A-1.5V12V3A-20VSchottky Diode (Isolated)-1.5 VUnknownNoROHS3 CompliantLead Free-------
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)6EAR9951mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2604061--1.1W TaENHANCEMENT MODE1.1W17 nsP-ChannelSWITCHING51m Ω @ 5.1A, 4.5V1.4V @ 250μA-3.9A Ta11nC @ 4.5V31ns-2.5V 4.5V±12V31 ns32 ns-5.1A-1.4V12V3.9A20V--No SVHCNoROHS3 CompliantLead FreeSingle-----
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)LITTLE FOOT®2013e3yesObsolete1 (Unlimited)6EAR99-PURE MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603061SINGLE WITH BUILT-IN DIODE-830mW TaENHANCEMENT MODE830mW10 nsN-Channel-125m Ω @ 2.4A, 4.5V600mV @ 250μA (Min)-2A Ta4nC @ 4.5V30ns-2.5V 4.5V±12V6 ns14 ns2.4A600mV12V2A20VSchottky Diode (Isolated)600 mVUnknownNoROHS3 Compliant--0.125Ohm----
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)LITTLE FOOT®2016e3yesObsolete1 (Unlimited)6EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603061SINGLE WITH BUILT-IN DIODE11.1W Ta 1.4W TcENHANCEMENT MODE1.1W18 nsP-ChannelSWITCHING84m Ω @ 3A, 10V1.5V @ 250μA330pF @ 10V3.3A Tc12nC @ 10V40ns20V2.5V 10V±12V40 ns18 ns-3.3A-12V3A-20VSchottky Diode (Isolated)--NoROHS3 Compliant--0.084Ohm13 Weeks1mm3.05mm1.65mm
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