SI3805DV-T1-GE3

Vishay Siliconix SI3805DV-T1-GE3

Part Number:
SI3805DV-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2483443-SI3805DV-T1-GE3
Description:
MOSFET P-CH 20V 3.3A 6-TSOP
ECAD Model:
Datasheet:
SI3805DV-T1-GE3

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Specifications
Vishay Siliconix SI3805DV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3805DV-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    19.986414mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    LITTLE FOOT®
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    84mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.1W Ta 1.4W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.1W
  • Turn On Delay Time
    18 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    84m Ω @ 3A, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    40ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    -3.3A
  • Threshold Voltage
    -1.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    3A
  • Drain to Source Breakdown Voltage
    -20V
  • FET Feature
    Schottky Diode (Isolated)
  • Nominal Vgs
    -1.5 V
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI3805DV-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 330pF @ 10V.This device has a continuous drain current (ID) of [-3.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 10V).

SI3805DV-T1-GE3 Features
a continuous drain current (ID) of -3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a threshold voltage of -1.5V
a 20V drain to source voltage (Vdss)


SI3805DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3805DV-T1-GE3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3805DV-T1-GE3 More Descriptions
Single P-Channel 20 V 0.084 O 12 nC Surface Mount Power Mosfet - TSOP-6.
Trans MOSFET P-CH 20V 3A 5-Pin TSOP T/R
P Channel Mosfet, -20V, 3.3A, Tsop, Full Reel; Transistor Polarity:p Channel Schottky; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.3A; On Resistance Rds(On):0.084Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI3805DV-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Feature
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    Drain-source On Resistance-Max
    Factory Lead Time
    Height
    Length
    Width
    View Compare
  • SI3805DV-T1-GE3
    SI3805DV-T1-GE3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    LITTLE FOOT®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    84mOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.1W Ta 1.4W Tc
    ENHANCEMENT MODE
    1.1W
    18 ns
    P-Channel
    SWITCHING
    84m Ω @ 3A, 10V
    1.5V @ 250μA
    330pF @ 10V
    3.3A Tc
    12nC @ 10V
    40ns
    20V
    2.5V 10V
    ±12V
    10 ns
    18 ns
    -3.3A
    -1.5V
    12V
    3A
    -20V
    Schottky Diode (Isolated)
    -1.5 V
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SI3867DV-T1-E3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    51mOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    6
    1
    -
    -
    1.1W Ta
    ENHANCEMENT MODE
    1.1W
    17 ns
    P-Channel
    SWITCHING
    51m Ω @ 5.1A, 4.5V
    1.4V @ 250μA
    -
    3.9A Ta
    11nC @ 4.5V
    31ns
    -
    2.5V 4.5V
    ±12V
    31 ns
    32 ns
    -5.1A
    -1.4V
    12V
    3.9A
    20V
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Single
    -
    -
    -
    -
    -
  • SI3812DV-T1-GE3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    LITTLE FOOT®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    PURE MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    SINGLE WITH BUILT-IN DIODE
    -
    830mW Ta
    ENHANCEMENT MODE
    830mW
    10 ns
    N-Channel
    -
    125m Ω @ 2.4A, 4.5V
    600mV @ 250μA (Min)
    -
    2A Ta
    4nC @ 4.5V
    30ns
    -
    2.5V 4.5V
    ±12V
    6 ns
    14 ns
    2.4A
    600mV
    12V
    2A
    20V
    Schottky Diode (Isolated)
    600 mV
    Unknown
    No
    ROHS3 Compliant
    -
    -
    0.125Ohm
    -
    -
    -
    -
  • SI3805DV-T1-E3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    LITTLE FOOT®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.1W Ta 1.4W Tc
    ENHANCEMENT MODE
    1.1W
    18 ns
    P-Channel
    SWITCHING
    84m Ω @ 3A, 10V
    1.5V @ 250μA
    330pF @ 10V
    3.3A Tc
    12nC @ 10V
    40ns
    20V
    2.5V 10V
    ±12V
    40 ns
    18 ns
    -3.3A
    -
    12V
    3A
    -20V
    Schottky Diode (Isolated)
    -
    -
    No
    ROHS3 Compliant
    -
    -
    0.084Ohm
    13 Weeks
    1mm
    3.05mm
    1.65mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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