Vishay Siliconix SI3483CDV-T1-GE3
- Part Number:
- SI3483CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3813623-SI3483CDV-T1-GE3
- Description:
- MOSFET P-CH 30V 8A 6-TSOP
- Datasheet:
- SI3483CDV-T1-GE3
Vishay Siliconix SI3483CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3483CDV-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2017
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta 4.2W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs34m Ω @ 6.1A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)-6.1A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- Drain-source On Resistance-Max0.034Ohm
- Drain to Source Breakdown Voltage-30V
- Nominal Vgs-3 V
- Height1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3483CDV-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1000pF @ 15V.This device conducts a continuous drain current (ID) of -6.1A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI3483CDV-T1-GE3 Features
a continuous drain current (ID) of -6.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI3483CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3483CDV-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1000pF @ 15V.This device conducts a continuous drain current (ID) of -6.1A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI3483CDV-T1-GE3 Features
a continuous drain current (ID) of -6.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI3483CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3483CDV-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SI3483CDV-T1-GE3 More Descriptions
SI3483CDV-T1-GE3 P-channel MOSFET Transistor; 7 A; 30 V; 6-Pin TSOP
P-CH MOSFET TSOP-6 30V 34MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2W
P Channel Mosfet, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI3483CDV-T1-GE3.
P-CH MOSFET TSOP-6 30V 34MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2W
P Channel Mosfet, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI3483CDV-T1-GE3.
The three parts on the right have similar specifications to SI3483CDV-T1-GE3.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodeTerminal FinishSupplier Device PackageTerminationResistanceMax Operating TemperatureMin Operating TemperatureDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
-
SI3483CDV-T1-GE314 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2017yesActive1 (Unlimited)6EAR99Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306112W Ta 4.2W TcSingleENHANCEMENT MODE2W10 nsP-ChannelSWITCHING34m Ω @ 6.1A, 10V3V @ 250μA1000pF @ 15V8A Tc33nC @ 10V15ns30V4.5V 10V±20V10 ns30 ns-6.1A-3V20V8A0.034Ohm-30V-3 V1mm3.05mm1.65mmUnknownNoROHS3 CompliantLead Free------------
-
--Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011yesObsolete1 (Unlimited)6EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603061-1.14W TaSingleENHANCEMENT MODE2W21 nsN-ChannelSWITCHING34m Ω @ 6.1A, 4.5V600mV @ 1mA (Min)-4.6A Ta12nC @ 4.5V45ns-2.5V 4.5V±12V30 ns40 ns4.6A4V12V-0.034Ohm30V4 V---UnknownNoROHS3 Compliant-e3Matte Tin (Sn)---------
-
14 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016yesActive1 (Unlimited)6EAR99Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306111.14W TaSingleENHANCEMENT MODE1.14W10 nsP-ChannelSWITCHING30m Ω @ 6.7A, 10V3V @ 250μA-5A Ta30nC @ 10V12ns-4.5V 10V±20V35 ns50 ns-6.7A-1V20V5A0.03Ohm-20V-1 V---UnknownNoROHS3 Compliant-e3Matte Tin (Sn)---------
-
--Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)HEXFET®2004-Obsolete2 (1 Year)---MOSFET (Metal Oxide)-----1-2W Ta--2W12 nsP-Channel-65mOhm @ 4.4A, 4.5V1.2V @ 250μA1079pF @ 10V4.4A Ta15nC @ 4.5V33ns20V2.5V 4.5V±12V72 ns70 ns-4.4A-1.2V12V---20V-1.2 V990.6μm3.0988mm1.7mmNo SVHCNoRoHS CompliantLead Free--Micro6™(TSOP-6)SMD/SMT65mOhm150°C-55°C-20V1.079nF65mOhm65 mΩ
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 January 2024
IRS2092S Audio Amplifier Technical Parameters, Alternatives, Applications and Other Details
Ⅰ. Overview of IRS2092SⅡ. Manufacturer of IRS2092SⅢ. Technical parameters of IRS2092SⅣ. How does IRS2092S work?Ⅴ. Circuit diagram of IRS2092SⅥ. Where is IRS2092S used?Ⅶ. What should we pay attention... -
26 January 2024
In-depth Understanding of 2SA1943 PNP Power Transistor
Ⅰ. 2SA1943 overviewⅡ. 2SA1943 symbol, footprint and pin configurationⅢ. Applications of 2SA1943Ⅳ. Absolute maximum ratings of 2SA1943Ⅴ. How does 2SA1943 transistor realize high collector current?Ⅵ. How to use... -
26 January 2024
What is NRF24L01 and How Does It Work?
Ⅰ. Overview of NRF24L01Ⅱ. Who is the manufacturer of NRF24L01?Ⅲ. Structural block diagram of NRF24L01Ⅳ. Applications of NRF24L01Ⅴ. Communication conditions of NRF24L01Ⅵ. Working modes of NRF24L01Ⅶ. Working principle... -
29 January 2024
2SC5200 Transistor Manufacturer, Specifications, Applications and Usage
Ⅰ. Overview of 2SC5200 transistorⅡ. Naming rules of 2SC5200 transistorⅢ. Symbol, footprint and pin configuration of 2SC5200Ⅳ. Manufacturer of 2SC5200 transistorⅤ. Specifications of 2SC5200 transistorⅥ. Applications of 2SC5200...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.